Production of a porous product including post adapting a pore structure

Patent metadata

Field	Value
Publication number	US-11053126-B2
Application number	US-201816172127-A
Country	US
Kind code	B2
Filing date	Oct 26, 2018
Priority date	Oct 27, 2017
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

One aspect is a production process including feeding a feed material composition into a reaction zone at a feeding position, wherein the feed material composition is liquid or gaseous or both; reacting the feed material composition in the reaction zone into a first plurality of particles by a chemical reaction; depositing the first plurality of particles onto a substrate surface of a substrate, thereby obtaining a porous silicon dioxide material, having a pore structure, in the form of up to 20 layers superimposing the substrate surface; at least partially removing the porous silicon dioxide material from the substrate surface; and modifying the pore structure of the porous silicon dioxide material, thereby obtaining the porous silicon dioxide material having a further pore structure.

First claim

What is claimed is:

1. A production process for making a porous silicon dioxide material comprising:
a. feeding a feed material composition into a reaction zone at a feeding position, wherein the feed material composition is liquid or gaseous or both;
b. reacting the feed material composition in the reaction zone into a first plurality of particles by a chemical reaction;
c. depositing the first plurality of particles onto a substrate surface of a substrate, thereby obtaining a porous silicon dioxide material, having a pore structure, in the form of up to 20 layers superimposing the substrate surface;
d. at least partially removing the porous silicon dioxide material from the substrate surface; and
e. modifying the pore structure of the porous silicon dioxide material, thereby obtaining the porous silicon dioxide material having a further pore structure, wherein modifying the pore structure comprises a thermal treatment of the porous silicon dioxide material and;
wherein the thermal treatment satisfies at least one of the following:
a. the maximum temperature in the thermal treatment is higher than the maximum temperature of the substrate surface reached in a) to e);
b. the thermal treatment comprises:
i. increasing the temperature of the porous silicon dioxide material to a temperature in the range from 1100 to 1400° C.,
ii. holding the temperature of the porous silicon dioxide material at a temperature in the range from 1100 to 1400° C. for a duration in the range from 100 to 2000 min, and
iii. decreasing the temperature of the porous silicon dioxide material below 1000° C.; and

c. the temperature of the removed porous silicon dioxide material is increased at a rate in the range from 2 to 10° C./min in the thermal treatment.

2. The process according to claim 1 , further comprising:
a. contacting the porous silicon dioxide material with a carbon source;
b. at least partially carbonising the carbon source, thereby obtaining a precursor comprising the porous silicon dioxide material and carbon; and
c. at least partially removing the porous silicon dioxide material from the precursor, thereby obtaining a porous carbon product.

Assignees

• Heraeus Quarzglas

Inventors

• Pihan Sascha
• Becker Jörg
• Neumann Christian

Classifications

• C01P2006/16

  Pore diameter · CPC title

• C01P2006/14

  Pore volume · CPC title

• C01P2006/12

  Surface area · CPC title

• C01P2006/10

  Solid density · CPC title

• C01B33/12 Primary

  Silica; Hydrates thereof, e.g. lepidoic silicic acid · CPC title