Display device
US-2020058888-A1 · Feb 20, 2020 · US
US11049771B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11049771-B2 |
| Application number | US-201816136792-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2018 |
| Priority date | Mar 28, 2018 |
| Publication date | Jun 29, 2021 |
| Grant date | Jun 29, 2021 |
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Official abstract text for this publication.
A method for forming a semiconductor device is provided. The method includes providing a substrate, placing a first stencil having a first openwork pattern on the substrate, applying a first material onto the substrate through the first stencil, and removing the first stencil from the substrate. The first material includes a transparent material. The method also includes placing a second stencil having a second openwork pattern on the substrate, applying a second material onto the substrate through the second stencil, and removing the second stencil from the substrate. The second material includes a light-shielding material, and the second openwork pattern is different from the first openwork pattern.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a semiconductor substrate; a light collimator layer disposed on the semiconductor substrate, wherein the light collimator layer comprises: a transparent material and a light-shielding material, wherein the transparent material is disposed correspondingly only to a pixel within the semiconductor substrate; and a plurality of light filtering particles disposed in the transparent material, wherein the light filtering particles are made of a light filtering material, wherein the light filtering particles are evenly distributed across a thickness of the transparent material. 2. The semiconductor device of claim 1 , wherein the transparent material is in direct contact with the semiconductor substrate. 3. The semiconductor device of claim 1 , wherein the transparent material comprises a light curing material, a thermal curing material, or a combination thereof. 4. The semiconductor device of claim 1 , wherein a portion of the transparent material is disposed on edges of the semiconductor substrate. 5. The semiconductor device of claim 1 , further comprising a cover plate disposed on the light collimator layer. 6. A fingerprint identification device, comprising: a semiconductor substrate; and a light collimator layer disposed on the semiconductor substrate, wherein the light collimator layer comprises: a transparent material and a light-shielding material, wherein the transparent material is disposed correspondingly only to a pixel within the semiconductor substrate; and a plurality of light filtering particles disposed in the transparent material, wherein the light filtering particles are made of a light filtering material, wherein the light filtering particles are evenly distributed across a thickness of the transparent material. 7. The fingerprint identification device of claim 6 , wherein the transparent material is in direct contact with the semiconductor substrate. 8. The fingerprint identification device of claim 6 , wherein the transparent material comprises a light curing material, a thermal curing material, or a combination thereof. 9. The fingerprint identification device of claim 6 , wherein a portion of the transparent material is disposed on edges of the semiconductor substrate. 10. The fingerprint identification device of claim 6 , further comprising a cover plate disposed on the light collimator layer.
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