Optical modulator

Patent metadata

Field	Value
Publication number	US-11048140-B2
Application number	US-201916694594-A
Country	US
Kind code	B2
Filing date	Nov 25, 2019
Priority date	Dec 12, 2018
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

An optical modulator includes: a waveguide made of semiconductor, a light being input to one of ends of the waveguide; and a first electrode provided on the waveguide and overlapping with a part of the waveguide, wherein the waveguide has a first region to a third region along a propagation direction of the light from the one of ends, wherein neither the first region nor a part of the second region on a side of the first region in the propagation direction overlaps with the first electrode, wherein the third region and a part of the second region on a side of the third region in the propagation direction overlap with the first electrode, wherein a second width of the second region is larger than a first width of the first region and a third width of the third region.

First claim

What is claimed is:

1. An optical modulator comprising:
a waveguide that is made of semiconductor and that includes an input waveguide, an optical coupler, a first arm waveguide, and a second arm waveguide, light input to the input waveguide being branched in the optical coupler into the first and the second arm waveguides; and
a first electrode that is provided on each of the first and the second arm waveguides and overlaps with the first and the second arm waveguides,
wherein each of the first and the second arm waveguides has a first region, a second region and a third region located along a propagation direction of the light in this order,
wherein, in the propagation direction, the second region of each of the first and the second arm waveguides has a part on a side of the first region and a part on a side of the third region,
wherein neither the first region nor the part of the second region on the side of the first region in the propagation direction overlaps with the first electrode,
wherein the third region and a part of the second region on the side of the third region in the propagation direction overlap with the first electrode,
wherein the first region has a first width,
wherein the second region has a second width,
wherein the third region has a third width, and
wherein the second width is larger than the first width and the third width.

2. The optical modulator as claimed in claim 1 ,
wherein the waveguide has a fourth region between the first region and the second region along the propagation direction,
wherein the waveguide has a fifth region between the second region and the third region along the propagation direction,
wherein a width of the fourth region increases from the side of the first region toward a side of the second region,
wherein a width of the fifth region decreases from the side of the second region toward the side of the third region, and
wherein a tangent of an inclination angle from the fourth region and the fifth region to the propagation direction is 0.002 or more and 0.05 or less.

3. The optical modulator as claimed in claim 1 , wherein the second width is twice or more than twice as large as the first width.

4. The optical modulator as claimed in claim 1 , wherein the second width is 2 μm or more and 5 μm or less.

5. The optical modulator as claimed in claim 1 , wherein the third width is equal to the first width.

6. The optical modulator as claimed in claim 1 , further comprising:
a substrate;
a first semiconductor layer that is provided on the substrate and has a first conductive type;
a core layer that is provided on the first semiconductor layer;
a second semiconductor layer that is provided on the core layer and has a second conductive type; and
a second electrode that is electrically connected with the first semiconductor layer,
wherein the first electrode is electrically connected with the second semiconductor layer, and
wherein the waveguide includes the first semiconductor layer, the core layer and the second semiconductor layer.

7. The optical modulator as claimed in claim 6 ,
wherein the first semiconductor layer and the second semiconductor layer include indium phosphorus and indium gallium arsenic, and
wherein the waveguide includes gallium indium arsenic phosphorus.

8. An optical modulator comprising:
a waveguide that is made of semiconductor and that has ends, light being input to one of the ends of the waveguide; and
an electrode that is provided on the waveguide and overlaps with the waveguide,
wherein the waveguide has a first region, a second region and a third region along a propagation direction of the light in this order from the one of the waveguide ends,
wherein, in the propagation direction, the second region of the waveguide has a part on a side of the first region, and a part on a side of the third region,
wherein the first region has a first width,
wherein the second region has a second width,
wherein the third region has a third width,
wherein the second width is larger than the first width and the third width,
wherein neither the first region nor a part of the second region on the side of the first region in the propagation direction overlaps with the electrode,
wherein the third region and a part of the second region on the side of the third region in the propagation direction overlap with the electrode, and
wherein the third region reaches an optical coupler with the third width.

Assignees

• Sumitomo Electric Industries

Inventors

• Tanaka Hajime
• Ishikawa Tsutomu

Classifications

• G02F1/015 Primary

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02B2006/12142

  Modulator · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title