Rapid curing epoxy repair composition and use thereof
US-2024360306-A1 · Oct 31, 2024 · US
US11046848B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11046848-B2 |
| Application number | US-201916523345-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 26, 2019 |
| Priority date | Aug 10, 2018 |
| Publication date | Jun 29, 2021 |
| Grant date | Jun 29, 2021 |
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Provided are a resin composition superior in moldability, and capable of yielding a cured product exhibiting a low elastic modulus even at a high temperature and no decrease in glass-transition temperature and having a favorable reflow resistance and heat resistance; and a semiconductor device encapsulated by such cured product. The resin composition is a heat-curable resin composition for semiconductor encapsulation, and contains: (A) an epoxy resin being solid at 25° C.; (B) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (C) an inorganic filler; and (D) an anionic curing accelerator.
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What is claimed is: 1. A heat-curable resin composition for semiconductor encapsulation, comprising: (A) an epoxy resin being solid at 25° C.; (B) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (C) an inorganic filler; and (D) an anionic curing accelerator; wherein the component (B) comprises at least (B-2) or comprises (B-1) and (B-2): (B-1) a cyclic imide group-containing organopolysiloxane represented by the following average composition formula (1) wherein R 1 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or a group represented by the following general formula (2) or (3); at least one R 1 is a group represented by the following general formula (2) or (3); a represents an integer of not smaller than 2; b represents an integer of not smaller than 0; c represents an integer of not smaller than 0; d represents an integer of not smaller than 0; a, b, c and d satisfy 2≤a+b+c+d≤1,000, wherein each of R 2 to R 7 independently represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 3 and R 4 may bond together to form a ring; R 6 and R 7 may bond together to form a ring; each of m and n represents an integer of 0 to 3; each of X and Y represents a substituted or unsubstituted divalent hydrocarbon group that has 1 to 10 carbon atoms, and may have a hetero atom(s); broken lines represent connections to silicon atoms in the formula (1); (B-2) a cyclic imide group-containing organopolysiloxane represented by the following average composition formula (1′) wherein R 11 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or a group represented by the following general formula (2), (3) or (4); two R 11 s may bond together to form the structure represented by the following general formula (4); at least one R 11 is a group represented by the following general formula (2), (3) or (4), and at least one R 11 is a group represented by the following general formula (4); a′ represents an integer of not smaller than 2; b′ represents an integer of not smaller than 0; c′ represents an integer of not smaller than 0; d′ represents an integer of not smaller than 0; a′, b′, c′ and d′ satisfy 2≤a′+b′+c′+d′≤1,000; wherein each of R 2 to R 7 independently represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 3 and R 4 may bond together to form a ring; R 6 and R 7 may bond together to form a ring; each of m and n represents an integer of 0 to 3; each of X and Y represents a substituted or unsubstituted divalent hydrocarbon group that has 1 to 10 carbon atoms, and may have a hetero atom(s); broken lines represent connections to the silicon atoms in the formula (1′), wherein Z represents a substituted or unsubstituted divalent hydrocarbon group that has 1 to 10 carbon atoms, and may have a hetero group(s); and wherein A in the general formula (4) has any one of the following structures wherein bonds in the above structural formulae that are yet unbonded to substituent groups are to be bonded to carbonyl carbons forming cyclic imide structures in the general formula (4); wherein at least one of R 1 groups and/or R 11 groups is an organic group having a maleimide structure represented by the following formula (3′) wherein each of R 6 and R 7 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 6 and R 7 may bond together to form a ring; Y represents a substituted or unsubstituted divalent hydrocarbon group that has 1 to 10 carbon atoms, and may have a hetero atom(s); a broken line represents a connection to the silicon atoms in the formula (1) or (1′); and a ratio between the components (A) and (B) is in a range of (A):(B)=99:1 to 10:90. 2. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , further comprising a curing agent as a component (E). 3. The heat-curable resin composition for semiconductor encapsulation according to claim 2 , wherein the curing agent as the component (E) is a phenol curing agent and/or a benzoxazine curing agent. 4. A semiconductor device encapsulated by a cured product of the heat-curable resin composition for semiconductor encapsulation according to claim 1 . 5. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the component (B) comprises both (B-1) and (B-2). 6. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the component (B) comprises only (B-2). 7. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the cyclic imide group-containing organopolysiloxane (B-1) is a component represented by: 8. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the cyclic imide group-containing organopolysiloxane (B-2) is a component represented by: wherein n=3. 9. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the epoxy resin has a melting point of 40 to 150° C. or a softening point of 50 to 160° C. 10. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the epoxy resin is selected from the group consisting of a bisphenol A-type epoxy resin; a bisphenol F-type epoxy resin; a biphenol type epoxy resin; a phenol novolac-type epoxy resin; a cresol novolac-type epoxy resin; a bisphenol A novolac-type epoxy resin; a naphthalenediol-type epoxy resin; a trisphenylol methane-type epoxy resin; a tetrakisphenylol ethane-type epoxy resin; a phenol biphenyl-type epoxy resin; an epoxy resin prepared by hydrogenating the aromatic rings in a dicyclopentadiene-type epoxy resin; an epoxy resin prepared by hydrogenating the aromatic rings in a phenol dicyclopentadiene novolac-type epoxy resin; a triazine derivative epoxy resin; an alicyclic epoxy resin, and mixtures thereof. 11. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the epoxy resin is selected from the group consisting of a trisphenylol methane-type epoxy resin and a dicyclopentadiene-type epoxy resin. 12. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the epoxy resin is present in an amount of 10 to 40% by mass.
Organic materials comprising silicon · CPC title
containing a filler · CPC title
containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen · CPC title
Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors · CPC title
Compositions of epoxy resins; Compositions of derivatives of epoxy resins · CPC title
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