Process for producing a target formed of a sintering-resistant material of a high-melting point metal alloy, silicide, carbide, nitride or boride
US-2017009335-A1 · Jan 12, 2017 · US
Tungsten silicide target and method of manufacturing same
US11046616B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11046616-B2 |
| Application number | US-201816493006-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 22, 2018 |
| Priority date | Mar 24, 2017 |
| Publication date | Jun 29, 2021 |
| Grant date | Jun 29, 2021 |
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Abstract
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A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A tungsten silicide target comprising not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm 2 on a sputtering surface, the tungsten silicide target having an oxygen concentration of 500 ppm by mass to 2000 ppm by mass and having a maximum grain size of 20 μm or less of Si grains on the sputtering surface observed. 2. The tungsten silicide target according to claim 1 , having a Si content in excess of a stoichiometric composition WSi 2 . 3. The tungsten silicide target according to claim 1 , having a maximum grain size of 15 μm or less of Si grains on the sputtering surface observed. 4. A method of manufacturing the tungsten silicide target according to claim 1 comprising: obtaining a mixture of a WSi 2 powder having an oxygen concentration of 500 ppm by mass to 2000 ppm by mass and a maximum grain size of 20 μm or less and a Si powder having an oxygen concentration of 500 ppm by mass to 2000 ppm by mass and a maximum grain size of 20 μm or less; and sintering the mixture under pressure to obtain a sintered product. 5. A method of manufacturing a tungsten silicide film, comprising sputtering using the tungsten silicide target according to claim 1 .
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Total pressure below 1 atmosphere, e.g. vacuum · CPC title
Treatment time · CPC title
Heating rate · CPC title
characterised by specific heating conditions during heat treatment · CPC title
Making the green bodies or pre-forms by moulding · CPC title
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- What does patent US11046616B2 cover?
- A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C04B35/58092. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 29 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).