Light-emitting device having a dielectric multilayer film arranged on the side surface of the light-emitting element

Patent metadata

Field	Value
Publication number	US-11043615-B2
Application number	US-202017010828-A
Country	US
Kind code	B2
Filing date	Sep 3, 2020
Priority date	Feb 21, 2018
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

A light-emitting device includes a light-emitting element having a top surface, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. An element electrode of the light-emitting element is located on the bottom surface. A phosphor layer is disposed above the top surface of the light-emitting element and having side surfaces. A reflective member covers side surfaces of the light-emitting element and side surfaces of the phosphor layer. A dielectric multilayer film is disposed on at least one of the side surfaces of the light-emitting element and disposed on at least one of the side surfaces of the phosphor layer and not located between the light emitting element and the phosphor layer. The dielectric multilayer film is not provided on an upper surface of the phosphor layer.

First claim

What is claimed is:

1. A light-emitting device comprising:
a light-emitting element having a top surface, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface, an element electrode of the light-emitting element being located on the bottom surface;
a phosphor layer disposed above the top surface of the light-emitting element and having side surfaces;
a reflective member covering side surfaces of the light-emitting element and side surfaces of the phosphor layer; and
a dielectric multilayer film disposed on at least one of the side surfaces of the light-emitting element and disposed on at least one of the side surfaces of the phosphor layer and not located between the light emitting element and the phosphor layer,
wherein the dielectric multilayer film is not provided on an upper surface of the phosphor layer.

2. The light-emitting device according to claim 1 ,
wherein the phosphor layer and the light-emitting element are directly bonded to each other.

3. The light-emitting device according to claim 1 ,
wherein the phosphor layer is bonded to the light-emitting element via a bonding member.

4. The light-emitting device according to claim 3 ,
wherein the dielectric multilayer film is arranged on the side surfaces of the light-emitting element, and
wherein the bonding member is arranged on the top surface of the light-emitting element and on the dielectric multilayer film.

5. The light-emitting device according to claim 4 ,
wherein a shape of the bonding member which is arranged on the side surfaces of the light-emitting element is a substantially triangle in a vertical sectional view.

6. The light-emitting device according to claim 1 , further comprising a base having a recess, the light-emitting element being arranged on a bottom surface of the recess of the base, the reflective member being filled into the recess.

7. The light-emitting device according to claim 1 ,
wherein the light-emitting element is configured to emit a light having a wavelength in a range of near-ultraviolet light to blue light, and
wherein the phosphor layer is configured to convert at least part of the light emitted from the light-emitting element to a light having a wavelength in a range of blue-green to red light.

8. The light-emitting device according to claim 1 ,
wherein an area of the light-emitting element is smaller than an area of the phosphor layer in plan view.

9. The light-emitting device according to claim 1 ,
wherein the dielectric multilayer film is arranged on all of the side surfaces of the light-emitting element.

10. The light-emitting device according to claim 1 ,
wherein the light-emitting element is arranged on a base, and
wherein the base is in contact with the reflective member.

11. The light-emitting device according to claim 1 ,
wherein the dielectric multilayer film is disposed directly on the at least one of the side surfaces of the phosphor layer.

12. The light-emitting device according to claim 1 , further comprising an additional dielectric multilayer film disposed directly on the at least one of the side surfaces of the light-emitting element,
wherein the dielectric multilayer film is disposed on the additional dielectric film.

13. The light-emitting device according to claim 12 , further comprising a further dielectric multilayer film disposed directly on the additional dielectric multilayer film,
wherein the further dielectric multilayer film is disposed on the at least one of the side surfaces of the light-emitting element and is disposed on the at least one of the side surfaces of the phosphor layer.

14. The light-emitting device according to claim 1 ,
wherein the dielectric multilayer film is disposed on the bottom surface of the light-emitting element except for at least a part of the element electrode.

15. The light-emitting device according to claim 1 ,
wherein the upper surface of the phosphor layer and a top surface of the reflective member are in a same plane.

16. The light-emitting device according to claim 1 ,
wherein the reflective member has a wall portion, and
wherein a thickness of the wall portion that covers the side surface of the phosphor layer is equal to a thickness of an upper surface of the wall portion.

Assignees

• Nichia Corp

Inventors

• Iwakura Daisuke
• Inoue Yoshiki

Classifications

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title

• H10H20/853

  characterised by their shape · CPC title

• H10H20/0363

  of optical field-shaping means · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title