Composition, formed body, laminate, far infrared ray transmitting filter, solid-state imaging element, infrared camera, and infrared sensor

US11043528B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11043528-B2
Application numberUS-201916242152-A
CountryUS
Kind codeB2
Filing dateJan 8, 2019
Priority dateSep 21, 2016
Publication dateJun 22, 2021
Grant dateJun 22, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A composition includes a metal particle and a resin and has a wavelength band A having a wavelength band width of 1 μm or more in a wavelength range of 1 to 14 μm and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, and a ratio Amin/Bmax between a minimum value Amin of an absorbance of the wavelength band A and a maximum value Bmax of an absorbance of the wavelength band B is 3 or more.

First claim

Opening claim text (preview).

What is claimed is: 1. A composition comprising: a metal particle; and a resin, wherein the metal particle includes at least one of Rh 2 O 3 particles, Ag 2 S particles, FeSi 2 particles, CoO particles, Mg 2 Si particles, MnSi particles, MnO 2 particles, BaSi 2 particles, V 2 O 3 particles, PbS particles, Ag 2 Te particles, Ti 2 O 3 particles, SrZrO 3 particles, BaZrO 3 particles, Ta 2 O 5 particles, WO 3 particles, CrF 3 particles, BiF 3 particles, Li 2 ZrO 3 particles, CaZrO 3 particles, CuTiO 3 particles, ZnTiO 3 particles, Ce(TiO 3 ) 2 particles, Bi(TiO 3 ) 3 particles, CaTiO 3 particles, BaTiO 3 particles, particles including a mixed crystal of Ag 2 S and Ag 2 Te, particles including a mixed crystal of CoO and MnO 2 , particles including a mixed crystal of Ti 2 O 3 and V 2 O 3 , or particles including a mixed crystal of Mg 2 Si and BaSi 2 , and wherein the composition, in a wavelength range of 1 to 14 μm, has a wavelength band A having a wavelength band width of 1 μm or more, and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, and a ratio A min /B max between a minimum value A min of an absorbance of the wavelength band A and a maximum value B max of an absorbance of the wavelength band B is 3 or more. 2. The composition according to claim 1 , wherein the wavelength band B is on a longer wavelength side than the wavelength band A. 3. The composition according to claim 1 , wherein the wavelength band B is on a shorter wavelength side than the wavelength band A. 4. The composition according to claim 1 , wherein a band gap energy of the metal particle at 25° C. is 1.0 eV or less. 5. A formed body obtained by using the composition according to claim 1 . 6. The formed body according to claim 5 , wherein an average refractive index is 1.3 to 5.0 in a wavelength range of 8 to 14 μm. 7. The formed body according to claim 5 , wherein a shape of the formed body is a film shape, a flat sheet shape, or a lens shape. 8. The formed body according to claim 5 , which is used for a far infrared ray transmitting filter. 9. A laminate comprising: a substrate; and the formed body according to claim 5 provided on the substrate. 10. The laminate according to claim 9 , wherein a refractive index n1 of the formed body at a wavelength of 10 μm and a refractive index n2 of a layer that is in contact with the formed body in a thickness direction of the formed body at a wavelength of 10 μm satisfy the following relationship, ( n 2) 0.5 −1 ≤n 1≤( n 2) 0.5 +1. 11. A far infrared ray transmitting filter comprising: the laminate according to claim 9 . 12. A far infrared ray transmitting filter comprising: the formed body according to claim 5 . 13. A solid-state imaging element comprising: the far infrared ray transmitting filter according to claim 12 . 14. An infrared camera comprising: the far infrared ray transmitting filter according to claim 12 . 15. An infrared sensor comprising: the far infrared ray transmitting filter according to claim 12 . 16. The composition according to claim 1 , wherein the metal particle includes at least one of Rh 2 O 3 particles, Ag 2 S particles, FeSi 2 particles, CoO particles, Mg 2 Si particles, MnSi particles, MnO 2 particles, BaSi 2 particles, V 2 O 3 particles, PbS particles, Ag 2 Te particles, SrZrO 3 particles, BaZrO 3 particles, Ta 2 O 5 particles, WO 3 particles, CrF 3 particles, BiF 3 particles, Li 2 ZrO 3 particles, CaZrO 3 particles, CuTiO 3 particles, ZnTiO 3 particles, Ce(TiO 3 ) 2 particles, Bi(TiO 3 ) 3 particles, CaTiO 3 particles, BaTiO 3 particles, particles including a mixed crystal of Ag 2 S and Ag 2 Te, particles including a mixed crystal of CoO and MnO 2 , particles including a mixed crystal of Ti 2 O 3 and V 2 O 3 , or particles including a mixed crystal of Mg 2 Si and BaSi 2 . 17. The composition according to claim 1 , wherein the metal particle includes at least one of Rh 2 O 3 particles, Ag 2 S particles, FeSi 2 particles, CoO particles, Mg 2 Si particles, MnSi particles, MnO 2 particles, BaSi 2 particles, V 2 O 3 particles, PbS particles, Ag 2 Te particles, SrZrO 3 particles, BaZrO 3 particles, Ta 2 O 5 particles, CrF 3 particles, BiF 3 particles, Li 2 ZrO 3 particles, CaZrO 3 particles, CuTiO 3 particles, ZnTiO 3 particles, Ce(TiO 3 ) 2 particles, Bi(TiO 3 ) 3 particles, CaTiO 3 particles, BaTiO 3 particles, particles including a mixed crystal of Ag 2 S and Ag 2 Te, particles including a mixed crystal of CoO and MnO 2 , particles including a mixed crystal of Ti 2 O 3 and V 2 O 3 , or particles including a mixed crystal of Mg 2 Si and BaSi 2 . 18. The composition according to claim 1 , wherein the metal particle includes at least one of Rh 2 O 3 particles, Ag 2 S particles, FeSi 2 particles, Mg 2 Si particles, MnSi particles, MnO 2 particles, Ag 2 Te particles, CrF 3 particles, BiF 3 particles, Li 2 ZrO 3 particles, CaZrO 3 particles, CuTiO 3 particles, ZnTiO 3 particles, Ce(TiO 3 ) 2 particles, Bi(TiO 3 ) 3 particles, CaTiO 3 particles, BaTiO 3 particles, or particles including a mixed crystal of Mg 2 Si and BaSi 2 . 19. The composition according to claim 1 , wherein the metal particle includes at least one of BaSi 2 particles, V 2 O 3 particles, PbS particles, particles including a mixed crystal of Ag 2 S and Ag 2 Te, particles including a mixed crystal of CoO and MnO 2 , particles including a mixed crystal of Ti 2 O 3 and V 2 O 3 , and particles including a mixed crystal of BaSi 2 and BaZrO 3 . 20. The composition according to claim 1 , wherein the metal particle includes Rh atom. 21. A composition comprising: a metal particle; and a resin, wherein the composition, in a wavelength range of 1 to 14 μm, has a wavelength band A having a wavelength band width of 1μm or more, and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, a ratio A min /B max between a minimum value A min of an absorbance of the wavelength band A and a maximum value B max of an absorbance of the wavelength band B is 3 or more, and the wavelength band B is on a shorter wavelength side than the wavelength band A.

Assignees

Inventors

Classifications

  • for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes · CPC title

  • Optical shielding · CPC title

  • H10F39/184Primary

    Infrared image sensors · CPC title

  • {Materials in mouldable or extrudable form} for sealing or packing joints or covers (filling pastes C09D5/34) · CPC title

  • Lenses · CPC title

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What does patent US11043528B2 cover?
A composition includes a metal particle and a resin and has a wavelength band A having a wavelength band width of 1 μm or more in a wavelength range of 1 to 14 μm and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, and a ratio Amin/Bmax between a minimum value Amin of an absorbance of the wavelength band A and a maximu…
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification H10F39/184. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 22 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).