Method for producing an organic electronic component, and organic electronic component

Patent metadata

Field	Value
Publication number	US-11040988-B2
Application number	US-201415515735-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Sep 30, 2014
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

A method for producing an organic electronic component and an organic electronic component are disclosed. In an embodiment the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, wherein the metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M.

First claim

The invention claimed is:

1. A method for producing an organic electronic component, wherein the component comprises at least one organic electronic layer comprising a matrix containing a dopant, the method comprising:
depositing the dopant of the at least one organic electronic layer by a gas-phase deposition via a source, wherein the source is configured such that the dopant undergoes collisions with at least one wall of the source and the dopant is a metal complex comprising at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure:

wherein E 1 and E 2 are mutually independently selectable to be oxygen, sulfur, selenium, NH or NR′,
wherein R′ is selected from the group consisting of alkyl and aryl and are attachable to a substituted benzene ring of the ligand L,
wherein the substituents R 1 are mutually independently selected from branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5,
wherein substituents R 2 are mutually independently selected from CN, branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl or heteroaryl, and
wherein m=0 to at most 5−n.

2. The method according to claim 1 , wherein the metal atom M of is selected from the group consisting of Cu, Cr, Mo, Rh and Ru.

3. The method according to claim 1 , wherein the metal atom M is selected from the group consisting of Bi and Cu.

4. The method according to claim 1 , wherein at least one of the substituents R 1 is a —CF 3 group.

5. The method according to claim 1 , wherein the ligand L comprises precisely two substituents R 1 , each forming a —CF 3 group.

6. The method according to claim 1 , wherein the ligand L comprises precisely two substituents R 1 , each forming a —CF 3 group and each being arranged in 3,5-position on the benzene ring of the ligand L.

7. The method according to claim 1 , wherein the substituents R 2 are mutually independently selectable from the group consisting of methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, tert-butyl and substituted and unsubstituted phenyl.

8. The method according to claim 1 , wherein both E 1 and E 2 are oxygen.

9. The method according to claim 1 , wherein the ligand L is selected from the group consisting of:

10. The method according to claim 1 , wherein the metal complex is a bismuth complex, and wherein the ligand L has the following structure:

wherein the substituent R 1 is selected from branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, and
wherein substituent R 3 is selected from branched or unbranched fluorinated or unfluorinated aliphatic hydrocarbons with 1 to 10 C atoms, aryl or heteroaryl.

11. The method according to claim 1 , wherein the metal complex has a decomposition temperature which is greater than 10 Kelvin above a sublimation temperature of the metal complex.

12. The method according to claim 1 , wherein the metal complex has a decomposition temperature which is greater than 40 Kelvin above a sublimation temperature of the metal complex.

13. The method according to claim 1 , wherein the metal complex has a decomposition temperature which is greater than 70 Kelvin above a sublimation temperature of the metal complex.

14. The method according to claim 1 , wherein the source is a linear source.

15. A method for producing an organic electronic component, wherein the component comprises at least one organic electronic layer comprising a matrix containing a dopant, the method comprising:
depositing the dopant of the at least one organic electronic layer by a gas-phase deposition via a source, wherein the source is configured such that the dopant undergoes collisions with at least one wall of the source and the dopant is a metal complex comprising at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure:

wherein E 1 and E 2 are mutually independently selectable to be oxygen, sulfur, selenium, NH or NR′,
wherein R′ is selected from the group consisting of alkyl and aryl and are attachable to a substituted benzene ring of the ligand L,
wherein the substituents R 1 are mutually independently selected from branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5,
wherein substituents R 2 are mutually independently selected from —CN, branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl or heteroaryl,
wherein m=0 to at most 5- n , and
wherein the metal atom M is selected from the group consisting of Bi, Cu, Cr, Mo, Rh and R.

16. The method according to claim 15 , wherein the metal atom M is Bi.

17. The method according to claim 15 , wherein the metal atom M is Bi in an oxidation state III.

18. The method according to claim 15 , wherein the substituent R 1 is an at least difluorinated substituent.

19. The method according to claim 15 , wherein the substituent R 1 is a perfluorinated substituent.

20. The method according to claim 15 , wherein the substituent R 1 is a —CF 3 group and the metal atom M is Bi.

21. A method for producing an organic electronic component, wherein the component comprises at least one organic electronic layer comprising a matrix containing a dopant, the method comprising:
depositing the dopant of the at least one organic electronic layer by a gas-phase deposition via a source,
wherein the source is configured such that the dopant undergoes collisions with at least one wall of the source, and
wherein the dopant is a metal complex having the following structure:

Assignees

• Novaled Gmbh

Inventors

• Schmid Guenter
• Maltenberger Anna
• Pecqueur Sebastien
• Regensburger Stefan

Classifications

• H10P14/687

  the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title

• C07F1/08 Primary

  Copper compounds · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• C07C63/70 Primary

  Monocarboxylic acids · CPC title

• H02M3/158

  including plural semiconductor devices as final control devices for a single load · CPC title