Semiconductor module

Patent metadata

Field	Value
Publication number	US-11037867-B2
Application number	US-201816610947-A
Country	US
Kind code	B2
Filing date	Apr 25, 2018
Priority date	May 5, 2017
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

A semiconductor module has at least two semiconductor components which are arranged within a housing in each case between two electrical conduction elements and are electrically conductively connected to the electrical conduction elements. The electrical conduction elements respectively have a contact extension that is led out of the housing, wherein two contact extensions arranged in different planes are connected to one another outside the housing via a contact element, which forms a current path between the two contact extensions outside the housing.

First claim

The invention claimed is:

1. A semiconductor module comprising a first and a second semiconductor component,
wherein the first and the second semiconductor components are arranged in a housing and form a half-bridge circuit,
wherein the first semiconductor component includes:
(i) a first contact extension that extends from the housing, the first contact extension being a drain terminal or a collector terminal, and
(ii) a first contact being a source terminal or an emitter terminal;

wherein the second semiconductor component includes:
(i) a second contact extension that extends from the housing, the second contact extension being a source terminal or an emitter terminal, and
(ii) a second contact being a drain terminal or a collector terminal;

wherein the first and the second contact extensions are arranged in different planes and are connected to one another outside the housing by a wire to form a phase tap of the half-bridge circuit, and
wherein the wire passes through the first and second contact extensions.

2. The semiconductor module as claimed in claim 1 , characterized in that the first and the second contact extensions are connected to the wire by soldering, resistance or laser welding, insulation-displacement connection, crimping or press-fit connection.

3. The semiconductor module as claimed in claim 1 , characterized in that the first and second semiconductor components are power semiconductor components that have a same area requirement, and
wherein the half-bridge circuit is configured to be used with an electrical machine.

4. The semiconductor module as claimed in claim 1 , characterized in that the first contact extension and the second contact are arranged with parallel and aligned edges in a common first plane.

5. The semiconductor module as claimed in claim 1 , characterized in that the first contact and the second contact extension are arranged with parallel and aligned edges in a common second plane.

6. The semiconductor module as claimed in claim 1 , characterized in that within the housing:
the first contact extension is connected via a first contacting layer to a drain electrode or collector electrode connected to the first semiconductor component,
the first contact is connected via a second contacting layer to a source electrode or emitter electrode connected to the first semiconductor component, and
wherein a first gate terminal or base terminal is connected via a third contacting layer to a gate electrode or base electrode of the first semiconductor component.

7. The semiconductor module as claimed in claim 1 , characterized in that within the housing:
the second contact is connected via a fourth contacting layer to a drain electrode or collector electrode connected to the second semiconductor component,
the second contact extension is connected via a fifth contacting layer to a source electrode or emitter electrode connected to the second semiconductor component, and
wherein a second gate terminal or base terminal is connected via a sixth contacting layer to a gate electrode or base electrode of the second semiconductor component.

8. A system including an electrical machine and a semiconductor module according to claim 1 , the electrical machine comprising a phase current wire having an end section, and wherein the end section of the phase current wire forms the wire of the phase tap.

9. The semiconductor module as claimed in claim 1 , characterized in that the housing is embodied as a molded housing.

10. The semiconductor module as claimed in claim 1 , characterized in that outwardly facing open surfaces of the first contact extension and of the second contact are flush with an underside of the housing.

11. The semiconductor module as claimed in claim 10 , characterized in that the housing is placed by the underside onto a printed circuit board or a heat sink.

12. The semiconductor module as claimed in claim 1 , characterized in that outwardly facing open surfaces of the first contact and of the second contact extension are flush with a top side of the housing.

13. The semiconductor module as claimed in claim 12 , characterized in that the housing is placed by the top side onto a printed circuit board or a heat sink.

14. A semiconductor module comprising a first and a second semiconductor component,
wherein the first and the second semiconductor components are arranged in a housing and form a half-bridge circuit,
wherein the first semiconductor component includes:
(i) a first contact extension that extends from the housing, the first contact extension being a drain terminal or a collector terminal, and
(ii) a first contact being a source terminal or an emitter terminal;

wherein the second semiconductor component includes:
(i) a second contact extension that extends from the housing, the second contact extension being a source terminal or an emitter terminal, and
(ii) a second contact being a drain terminal or a collector terminal;

wherein the first and the second contact extensions are arranged in different planes and are connected to one another outside the housing to form a phase tap of the half-bridge circuit, characterized in that within the housing:
the first contact extension is connected via a first contacting layer to a drain electrode or collector electrode connected to the first semiconductor component,
the first contact is connected via a second contacting layer to a source electrode or emitter electrode connected to the first semiconductor component, wherein a first gate terminal or base terminal is connected via a third contacting layer to a gate electrode or base electrode of the first semiconductor component
the second contact is connected via a fourth contacting layer to a drain electrode or collector electrode connected to the second semiconductor component,
the second contact extension is connected via a fifth contacting layer to a source electrode or emitter electrode connected to the second semiconductor component, wherein a second gate terminal or base terminal is connected via a sixth contacting layer to a gate electrode or base electrode of the second semiconductor component, and
wherein only the first gate terminal or base terminal and the second gate terminal or base terminal are electrically contacted with a printed circuit board.

Assignees

• Bosch Gmbh Robert

Inventors

• Proepper Thomas

Classifications

• H10W72/637

  Multiple strap connectors having different shapes · CPC title

• H10W72/07652

  changes in structures or sizes · CPC title

• H10W72/627

  Multiple strap connectors having different structures or shapes · CPC title

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W76/138

  having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type · CPC title