Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module

US11037862B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11037862-B2
Application numberUS-201615578867-A
CountryUS
Kind codeB2
Filing dateMay 23, 2016
Priority dateJun 1, 2015
Publication dateJun 15, 2021
Grant dateJun 15, 2021

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  1. Title

    What the patent document calls the invention.

  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for electrically contacting a component having a first component surface, a second component surface opposite the first component surface, and at least two electrical contacts, each of the at least two electrical contacts having a first contact surface and a second contact surface opposite the first contact surface, the second contact surface of a first electrical contact of the at least two electrical contacts being in contact with the first component surface of the component and the second contact surface of a second electrical contact of the at least two electrical contacts being in contact with the second component surface of the component, the method comprising: galvanically connecting a first open-pored contact piece to the first contact surface of the first electrical contact and a second open-pored contact piece to the first contact surface of the second electrical contact of the at least two electrical contacts of the component, each of the first open-pored contact piece and the second open-pored contact piece having a plurality of open pores prior to being galvanically connected to the first electrical contact or the second electrical contact of the at least two electrical contacts. 2. The method of claim 1 , wherein each of the first electrical contact and the second electrical contact of the at least two electrical contacts is a flat part, has a respective contact surface, a largest planar extension of which is larger than an extension of the respective contact perpendicular to the respective contact surface, or a combination thereof. 3. The method of claim 1 , wherein an electrically conductive contact piece is used as the first open-pored contact piece or the second open-pored contact piece. 4. The method of claim 1 , wherein the first open-pored contact piece and the second open-pored contact piece is formed from or with porous material. 5. The method of claim 1 , wherein the first open-pored contact piece or the second open-pored contact piece is formed from or with metal. 6. The method of claim 5 , wherein the metal includes nickel, silver, gold, tin, copper, or any combination thereof. 7. The method of claim 1 , wherein the first open-pored contact piece and the second open-pored contact piece is formed with a tissue structure, a foam structure, a mesh structure, or any combination thereof. 8. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece and the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts at a temperature not exceeding 100° C., deviating from an operating temperature of the component by no more than 50° C., or a combination thereof. 9. The method of claim 8 , wherein galvanically connecting the first open-pored contact piece and the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts at a temperature not exceeding 5° C., deviating from the operating temperature of the component by no more than 2° C., or a combination thereof. 10. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece or the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece or the second open-pored contact piece using an electrochemical plating process. 11. The method of claim 1 , wherein galvanically connecting the first open-pored contact piece or the second open-pored contact piece comprises galvanically connecting the first open-pored contact piece to the first electrical contact and the second open-pored contact piece to the second electrical contact of the at least two electrical contacts by a method free of external current. 12. The method of claim 11 , wherein the method free of external current includes transfer metallization, reduction metallization, contact metallization, or any combination thereof. 13. The method of claim 1 , wherein the component is contacted with another component, a current conductor, with a substrate, or any combination thereof by one of the first open-pored contact piece or the second open-pored contact piece, and wherein the method further comprises coating the one of the first open-pored contact piece or the second open-pored contact piece, the component, the other component, the current conductor, the substrate, or any combination thereof with an electrical insulation layer. 14. The method of claim 13 , wherein the coating comprises forming the electrical insulation layer, forming the electrical insulation layer comprising casting the insulation layer, molding the insulation layer, forming the insulation layer from or with siloxanes, polymers, or silxanes and polymers, or any combination thereof. 15. The method of claim 1 , wherein a power component is used as the component. 16. The method of claim 1 , wherein a component having at least one transistor is used as the component. 17. The method of claim 1 , wherein the first contact surface of the first electrical contact is a top surface and the second contact surface of the first electrical contact is a bottom surface.

Assignees

Inventors

Classifications

  • Shapes of strap connectors · CPC title

  • changes in shapes · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • Subject matter not provided for in other groups of this subclass · CPC title

  • Encapsulations, e.g. protective coatings · CPC title

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Frequently asked questions

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What does patent US11037862B2 cover?
The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at…
Who is the assignee on this patent?
Siemens Ag
What technology area does this patent fall under?
Primary CPC classification H10W70/093. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 15 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).