Physical vapor deposition processing systems target cooling

Patent metadata

Field	Value
Publication number	US-11037769-B2
Application number	US-202016867878-A
Country	US
Kind code	B2
Filing date	May 6, 2020
Priority date	Aug 18, 2017
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

First claim

What is claimed is:

1. A method of cooling a physical vapor deposition target during a physical vapor deposition process, the method comprising:
continuously flowing cooling fluid through a cooling channel formed in a backing plate having a front side and a back side, the backing plate supporting a source material on the front side of the backing plate, the cooling channel including a single inlet comprising a single inlet end and a single outlet end, the single inlet configured to be connected to a cooling fluid, a single inlet conduit and a single outlet fluidly coupled to the single inlet, and the cooling channel comprising a plurality of arcs joined together by a plurality of bends between the single inlet end and the single outlet end, the single inlet conduit dividing a first pair of arcs on a first side of the single inlet conduit and a second pair of arcs on a second side of the single inlet conduit; and
cooling the backing plate and the source material during the physical vapor deposition process.

2. The method of claim 1 , the cooling channel further comprising a cooling tube that provides a closed cooling loop containing the cooling fluid, the cooling tube disposed adjacent the cooling channel.

3. The method of claim 1 , the plurality of bends defining a flow pattern including a plurality of concentric arcs.

4. The method of claim 3 , the flow pattern comprising at least four arcs and five bends.

5. The method of claim 3 , the flow pattern comprising at least eight arcs and six bends.

6. The method of claim 3 , the single inlet end fluidly connected to the first pair of arcs and the second pair of arcs by a split connection, and the single outlet fluidly connected to the first pair of arcs and the second pair of arcs.

7. The method of claim 3 , the single inlet fluidly connected to the single inlet conduit fluidly connected to the first pair of arcs and the second pair of arcs by a split connection, and the single outlet end fluidly connected to the first pair of arcs and the second pair of arcs.

8. The method of claim 2 , the cooling tube disposed between the backing plate and a cover plate.

9. The method of claim 8 , wherein the cover plate and the backing plate comprise a metal alloy having an electrical conductivity in a range of about 20-30% of International Annealed Copper Standard (IACS) and a thermal conductivity in a range of about 120-150 W/mK.

10. The method of claim 9 , wherein the cover plate and the backing plate comprise a metal alloy selected from a copper-nickel-silicon-chromium metal alloy and copper-zinc metal alloy containing lead and iron.

11. The method of claim 1 , wherein the backing plate comprises a metal alloy having an electrical conductivity in a range of about 20-30% of International Annealed Copper Standard (IACS) and a thermal conductivity in a range of about 120-150 W/mK.

12. The method of claim 11 , wherein the backing plate comprises a metal alloy selected from a copper-nickel-silicon-chromium metal alloy and copper-zinc metal alloy containing lead and iron.

13. The method of claim 1 , wherein the source material comprises a metal, metal oxide, or a metal alloy.

14. The method of claim 1 , wherein the source material comprises silicon or molybdenum.

15. The method of claim 14 , wherein the physical vapor deposition process is utilized to manufacture an extreme ultraviolet (EUV) mask blank.

16. The method of claim 15 , wherein the physical vapor deposition process comprises forming a multilayer stack including alternating reflective layers of a first reflective layer and a second reflective layer.

17. The method of claim 16 , wherein the first reflective layer comprises silicon and the second reflective layer comprises molybdenum.

18. The method of claim 17 , wherein the method comprises forming a range of 20-60 reflective pairs comprising the first reflective layer and the second reflective layer.

19. The method of claim 18 , wherein the alternating reflective layers are formed in a multi-cathode source chamber.

Assignees

• Applied Materials Inc

Inventors

• Bhat Sanjay
• Jindal Vibhu
• Pandey Vishwas Kumar

Classifications

• B23K15/0086

  welding for purposes other than joining, e.g. build-up welding · CPC title

• B23K15/0053

  Seam welding · CPC title

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• C22C9/04

  with zinc as the next major constituent · CPC title