Sulfonium salt, resist composition and resist pattern forming process
US-9604921-B2 · Mar 28, 2017 · US
US11036136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11036136-B2 |
| Application number | US-201916420680-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2019 |
| Priority date | May 25, 2018 |
| Publication date | Jun 15, 2021 |
| Grant date | Jun 15, 2021 |
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An onium salt of arenesulfonic acid having a bridged ring-containing group generates a bulky acid having an appropriate strength and controlled diffusion. When a positive resist composition comprising the onium salt and a base polymer is processed by lithography, a pattern of rectangular profile having high resolution and reduced LER is formed.
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The invention claimed is: 1. An onium salt having the formula (1): wherein X 1 and X 2 are each independently methylene, propane-2,2-diyl or ether bond, L is a single bond, ester bond, sulfonic acid ester bond, carbonate bond or carbamate bond, R 1 and R 2 are each independently a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, m 1 and m 2 are each independently an integer of 0 to 2, m 3 is 0 or 1, n 1 is an integer satisfying 1≤n 1 ≤5+2m 1 , n 2 is an integer satisfying 0≤n 2 ≤4+2m 2 , n 3 is an integer satisfying 0≤n 3 ≤8+4m 3 , A + is a sulfonium cation having the formula (2), an iodonium cation having the formula (3), or an ammonium cation having the formula (4): wherein R 3A , R 3B , R 3C , R 4A , R 4B , R 5A , R 5B and R 5C are each independently a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, R 5D is hydrogen or a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, any two of R 3A , R 3B , and R 3C , or any two of R 5A , R 5B , R 5C , and R 5D may bond together to form a ring with the sulfur or nitrogen atom to which they are attached. 2. A chemically amplified positive resist composition comprising (A) an acid generator containing the onium salt of claim 1 and (B) a base polymer containing a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer. 3. The resist composition of claim 2 wherein the polymer comprises recurring units having the formula (B1): wherein R A is hydrogen, fluorine, methyl or trifluoromethyl, R 11 is each independently halogen, an optionally halogenated C 2 -C 8 acyloxy group, optionally halogenated C 1 -C 6 alkyl group, or optionally halogenated C 1 -C 6 alkoxy group, A 1 is a single bond or C 1 -C 10 alkanediyl group in which an ether bond may intervene in a carbon-carbon bond, t 1 is 0 or 1, x 1 is an integer of 0 to 2, a 1 is an integer satisfying 0≤a 1 ≤5+2x 1 −a 2 , and a 2 is an integer of 1 to 3. 4. The resist composition of claim 2 wherein the polymer comprises recurring units having the formula (B2): wherein R A is hydrogen, fluorine, methyl or trifluoromethyl, R 12 is each independently halogen, an optionally halogenated C 2 -C 8 acyloxy group, optionally halogenated C 1 -C 6 alkyl group, or optionally halogenated C 1 -C 6 alkoxy group, A 2 is a single bond or C 1 -C 10 alkanediyl group in which an ether bond may intervene in a carbon-carbon bond, t 2 is 0 or 1, x 2 is an integer of 0 to 2, b 1 is an integer satisfying 0≤b 1 ≤5+2x 2 −b 3 , b 2 is 0 or 1, b 3 is an integer of 1 to 3, X is an acid labile group in case of b 3 =1, and X is each independently hydrogen or an acid labile group in case of b 3 =2 or 3, at least one X being an acid labile group. 5. The resist composition of claim 2 wherein the polymer comprises recurring units of at least one type selected from units having the formulae (B3), (B4), and (B5): wherein R A is hydrogen, fluorine, methyl or trifluoromethyl, R 13 and R 14 are each independently a hydroxyl group, halogen atom, acetoxy group, optionally halogenated C 1 -C 6 alkyl group, optionally halogenated C 1 -C 6 primary alkoxy group, optionally halogenated C 2 -C 6 secondary alkoxy group, optionally halogenated C 2 -C 8 acyloxy group, or optionally halogenated C 2 -C 8 alkylcarbonyloxy group, R 15 is an acetyl group, acetoxy group, C 1 -C 20 alkyl group, C 1 -C 20 primary alkoxy group, C 2 -C 20 secondary alkoxy group, C 2 -C 20 acyloxy group, C 2 -C 20 alkoxyalkyl group, C 2 -C 20 alkylthioalkyl group, halogen atom, nitro group, or cyano group, A 3 is a single bond or C 1 -C 10 alkanediyl group in which an ether bond may intervene in a carbon-carbon bond, c is an integer of 0 to 6, d is an integer of 0 to 4, e is an integer of 0 to 5, t 3 is 0 or 1, and x 3 is an integer of 0 to 2. 6. The resist composition of claim 2 wherein the polymer further comprises recurring units of at least one type selected from units having the formulae (B6) to (B11): wherein R A is hydrogen, fluorine, methyl or trifluoromethyl, Z 1 is a single bond, phenylene group, —O—Z 11 —, —C(═O)—O—Z 11 — or —C(═O)—NH—Z 11 —, Z 11 is a C 1 -C 6 alkanediyl, C 2 -C 6 alkenediyl or phenylene group, which may contain a carbonyl, ester bond, ether bond or hydroxyl moiety, Z 2 is a single bond or —Z 21 —C(═O)—O—, Z 21 is a C 1 -C 20 divalent hydrocarbon group which may contain a heteroatom, Z 3 is each independently a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z 31 —, —C(═O)—O—Z 31 —, or —C(═O)—NH—Z 31 —, Z 31 is a C 1 -C 6 alkanediyl, C 2 -C 6 alkenediyl or phenylene group, which may contain a carbonyl, ester bond, ether bond or hydroxyl moiety, R 21 to R 33 are each independently a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, or R 21 and R 22 may bond together to form a ring with the sulfur atom to which they are attached, or any two of R 23 , R 24 and R 25 may bond together to form a ring with the sulfur atom to which they are attached, any two of R 26 , R 27 and R 28 may bond together to form a ring with the sulfur atom to which they are attached, and M − is a non-nucleophilic counter ion. 7. The resist composition of claim 2 , further comprising (C) an organic solvent. 8. The resist composition of claim 2 , further comprising (D) a fluorinated polymer comprising recurring units having the formula (D) and recurring units of at least one type selected from units having the formulae (D2), (D3), (D4), and (D5): wherein R B is hydrogen or methyl, R C is each independently hydrogen, fluorine, methyl or trifluoromethyl, R 51 is hydrogen or a C 1 -C 5 straight or branched monovalent hydrocarbon group in which a heteroatom-containing moiety may intervene in a carbon-carbon bond, R 52 is a C 1 -C 5 straight or branched monovalent hydrocarbon group in which a heteroatom-containing moiety may intervene in a carbon-carbon bond, R 53a , R 53b , R 55a and R 55b are each independently hydrogen or a C 1 -C 10 alkyl group, R 54 , R 56 , R 57 and R 58 are each independently hydrogen, a C 1 -C 15 monovalent hydrocarbon group, C 1 -C 15 monovalent fluorinated hydrocarbon group, or an acid labile group, with the proviso that an ether bond or carbonyl moiety may intervene in a carbon-carbon bond in the monovalent hydrocarbon groups or monovalent fluorinated hydrocarbon groups represented by R 54 , R 56 , R 57 and R 58 , Y 1 is a single bond, —C(═O)—O— or —C(═O)—NH—, Y 2 is a C 1 -C 20 (h+1)-valent hydrocarbon group or C 1 -C 20 (h+1)-valent fluorinated hydrocarbon group, g 1 is an integer of 1 to 3, g 2 is an integer satisfying 0≤g 2 ≤5+2g 3 −g 1 , g 3 is 0 or 1, and h is an integer of 1 to 3. 9. A resist pattern forming process comprising the steps of: applying the resist composition of claim 2 onto a substrate to form a resist film thereon, exposing the resis
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