Method for manufacturing metal wire and array substrate using the same
US-2018374878-A1 · Dec 27, 2018 · US
US11036105B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11036105-B2 |
| Application number | US-201916462780-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 2, 2019 |
| Priority date | Oct 8, 2018 |
| Publication date | Jun 15, 2021 |
| Grant date | Jun 15, 2021 |
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A method and apparatus for improving display contrast, the method includes: providing a display array substrate having a metal layer; forming a photoresist layer on a surface of the metal layer; performing an exposure and development processes on the photoresist layer to expose a portion of the metal layer; performing an etching process on the portion of the metal layer to form metal wires; and subjecting an oxidation treatment to sidewalls of the metal wires to generate an oxide on the sidewalls of the metal wires.
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What is claimed is: 1. A method for improving the contrast of a display, comprising the steps of: step S 1 , providing a display array substrate, and forming a metal conductive wire at a side of the display array substrate, step S 2 , forming a photoresist layer on a surface of the display array substrate in a reaction chamber, step S 3 , subjecting the surface of the photoresist layer to a wet etching to remove a photoresist residue, step S 4 , conducting an oxidation treatment to a sidewall of the metal conductive wire to generate an oxide on the sidewall of the metal conductive wire, and step S 5 , stripping the photoresist on the surface of the photoresist layer, and the photoresist on the surface of the metal wire being retained; wherein the oxidization treatment in the step S 4 comprises steps of: after a copper metal layer is deposited and before processes of photoresist coating, exposure, and development are conducted, a copper oxide layer is deposited on the copper metal layer by using a copper oxide target material, a thickness of the copper oxide layer is ≤150 nm, and then steps of photoresist coating, exposure, development, and etching are performed. 2. The method for improving the contrast of a display according to claim 1 , wherein the oxidation treatment in step S 4 comprises the following steps: oxygen is introduced into the reaction chamber, the temperature of the oxygen is below 150 degrees Celsius, the gas surface treatment time is less than 240 seconds, and the gas flow rate is lower than 3000 standard milliliters per minute. 3. The method according to claim 1 , wherein the oxidization treatment in step S 4 comprises the steps of: introducing dry compressed air into the reaction chamber, the air temperature is below 150 degrees Celsius, the gas surface treatment time is less than 240 seconds, and the gas flow rate is lower than 3000 standard milliliters per minute. 4. The method according to claim 1 , wherein the oxidization treatment in step S 4 comprises the steps of: subjecting the photoresist layer to an etching treatment using a strong oxidizing agent diluted solution. 5. The method according to claim 4 , wherein the strong oxidant diluted solution is a diluted hydrogen peroxide. 6. The method according to claim 1 , wherein the oxidization treatment comprises the steps of: introducing ozone into the reaction chamber, the gas temperature is below 150 degrees Celsius, and a treatment time is less than 240 seconds. 7. The method according to claim 1 , wherein the metal conductive wire is shielded by a black matrix. 8. The method for improving the contrast of a display according to claim 1 , wherein the photoresist layer functions as a high contrast filter layer. 9. The method for improving the contrast of a display according to claim 1 , wherein in the step S 4 , the metal conductive wire and the photoresist layer are irradiated with ultraviolet light. 10. A liquid crystal display comprising the display array substrate produced by the method of claim 1 . 11. An electronic device comprising the display array substrate produced by the method of claim 1 . 12. A liquid crystal display comprising the display array substrate produced by the method of claim 1 , wherein a metal wire is disposed on sides of the display array substrate, and sides of the metal wire are deposited with an oxide. 13. The liquid crystal display according to claim 12 , wherein a corner position of the metal wire has an arc structure. 14. The liquid crystal display according to claim 12 , wherein the metal wire is a metal of copper (Cu) or tungsten (Wu). 15. The liquid crystal display according to claim 12 , wherein the display array substrate further comprises liquid crystals, the liquid crystals are arranged in a cross. 16. The liquid crystal display according to claim 12 , wherein the oxide is a copper oxide. 17. The array substrate according to claim 12 , wherein the display array substrate comprises a sequence of pixels, and the sequence of pixels can be in an OLED array, or in a QLED array, or in a micro LED array. 18. An electronic device comprising the liquid crystal display of claim 12 .
Materials; Compositions; Manufacture processes · CPC title
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