Optical sensor and analyzer using the same

Patent metadata

Field	Value
Publication number	US-11036013-B2
Application number	US-201916258763-A
Country	US
Kind code	B2
Filing date	Jan 28, 2019
Priority date	Mar 22, 2018
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

Provided are an optical sensor and an analyzer, including an optical sensor section in which a cladding layer of an optical fiber is removed so as to expose a core layer by a predetermined optical path length, and a protective material is added to a surface of the exposed core layer, the protective material having higher resistance to an organic solvent, base, or acid than that of the cladding layer; a light source device that causes light to enter one end of the optical fiber; a light receiving device that receives transmitted light emitted from another end of the optical fiber; and a control device that controls the light source device and the light receiving device to measure optical transmittance in the optical sensor based on a ratio of intensity of the light emitted from the light source device to intensity of the light received by the light receiving device.

First claim

What is claimed is:

1. An analyzer comprising:
an optical sensor section in which a cladding layer of an optical fiber is removed by a predetermined optical path length so as to expose a core layer, a protective material is disposed directly on a surface of the exposed core layer, the protective material having higher resistance to an organic solvent, base, or acid than that of the cladding layer, and the protective material is polymethylmethacrylate (PMMA), which is different than a material of the core layer;
a light source device that causes light to enter one end of the optical fiber of the optical sensor;
a light receiving device that receives transmitted light emitted from another end of the optical fiber of the optical sensor; and
a control device that controls the light source device and the light receiving device to measure optical transmittance in the optical sensor based on a ratio of intensity of the light emitted from the light source device to intensity of the light received by the light receiving device.

2. The analyzer according to claim 1 , wherein
the predetermined optical path length by which the cladding layer of the optical fiber is removed so as to expose the core layer is between 5 and 10 cm.

3. An optical sensor and an analyzer, comprising:
an optical waveguide in which an insulating layer and a core layer formed on a substrate are patterned by etching to form the core layer in a spiral shape;
a light emitting element that causes light to enter one end of the optical waveguide; and
a light receiving element that receives transmitted light emitted from another end of the optical waveguide,
wherein a cladding layer on a side opposite to the substrate with respect to the core layer is removed or thinned,
wherein optical transmittance in the optical waveguide is measured based on a ratio of intensity of the light emitted from the light emitting element to intensity of the light received by the light receiving element,
wherein a semiconductor laser is integrated into the optical waveguide as the light emitting element, the semiconductor laser being formed of a compound semiconductor attached to an upper surface of the optical waveguide substrate, the semiconductor laser being of a ridge type,
wherein the semiconductor laser includes a first InP layer and a second InP layer disposed above the first InP layer,
wherein the semiconductor laser includes electrodes disposed on the first InP layer,
wherein the second InP layer is disposed between the electrodes in a plan view,
wherein distribution of propagating light is moved from the semiconductor laser to the optical waveguide by a reduction in an effective refractive index of layers of the compound semiconductor forming the semiconductor laser in a direction of light propagation,
wherein a width of the second InP layer decreases in the direction of light propagation, and
wherein a width of the first InP layer of the layers of the compound semiconductor forming the semiconductor laser is shaped in a manner to form multiple tapered portions.

4. The optical sensor and the analyzer according to claim 3 , wherein
in an area in which the cladding layer on the side opposite to the substrate with respect to the core layer is removed or thinned, the core layer of the optical waveguide is made of a material having higher resistance to an organic solvent, base, or acid than that of the cladding layer.

5. The optical sensor and the analyzer according to claim 3 , wherein
a linear portion of the core layer of the optical waveguide is smaller in width than a curved portion thereof.

6. The optical sensor and the analyzer according to claim 3 , wherein
at least a part of the linear portion of the optical waveguide is of a slot waveguide type.

7. The optical sensor and the analyzer according to claim 3 , wherein
the at least one of the layers of the compound semiconductor forming the semiconductor laser is a cladding layer of the semiconductor laser on a side facing the optical waveguide substrate, the at least one of the layers being shaped in a manner to form the plurality of tapered portions with the pointed ends in the direction of light propagation, in the plane perpendicular to the stacking direction of the semiconductor layers.

Assignees

• Hitachi Ltd

Inventors

• Takahashi Makoto
• Takamori Yoshiyuki

Classifications

• G01N21/17

  Systems in which incident light is modified in accordance with the properties of the material investigated (where the material investigated is optically excited causing a change in wavelength of the incident light G01N21/63) · CPC title

• G02B6/14

  Mode converters · CPC title

• G02B6/4206

  Optical features (G02B6/4207, G02B6/421 take precedence) · CPC title

• G01N21/431

  Dip refractometers, e.g. using optical fibres · CPC title

• C08L33/12

  Homopolymers or copolymers of methyl methacrylate · CPC title