Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US11031567B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11031567-B2 |
| Application number | US-88021007-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 19, 2007 |
| Priority date | Jul 11, 2006 |
| Publication date | Jun 8, 2021 |
| Grant date | Jun 8, 2021 |
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An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a photosensitive optoelectronic device, comprising: depositing a first organic semiconductor material over a first electrode to form a continuous first layer; depositing a second organic semiconductor material over the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing the first organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; alternating deposition of the first and second organic semiconductor materials; depositing the second organic semiconductor material to form a continuous fourth layer, and depositing a second electrode over the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to the second organic semiconductor material, said second organic semiconductor material being one or more materials of the other material, wherein at least one of the first and second organic semiconductor materials comprise nanocrystals. 2. The method of claim 1 , wherein said first material is copper phthalocyanine and said second material is C 60 . 3. The method of claim 2 wherein each of said first and second organic semiconductor materials are deposited via organic vapor phase deposition. 4. The method of claim 3 further comprising: depositing an exciton blocking layer between said fourth layer and said second electrode. 5. The method of claim 1 wherein said first, second, third and fourth layers are part of a first organic photoactive region, the method further comprising: forming a second photoactive region between said first photoactive region and said second electrode. 6. The method of claim 1 further comprising: depositing additional first organic semiconductor material onto said first layer prior to depositing said second organic semiconductor material onto said first layer.
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