Fullerene derivative, organic solar cell using same, and manufacturing method thereof
US-2016056383-A1 · Feb 25, 2016 · US
P-type semiconductor film containing heterofullerene, and electronic device
US11031558B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11031558-B2 |
| Application number | US-201816635021-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2018 |
| Priority date | Aug 31, 2017 |
| Publication date | Jun 8, 2021 |
| Grant date | Jun 8, 2021 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A p-type semiconductor film including heterofullerene having a further sufficiently high hole mobility is provided. The p-type semiconductor film contains heterofullerene in which n+r number (where n and r are both positive odd numbers) of carbon atoms constituting a fullerene are substituted by n number of boron atom or atoms and r number of nitrogen atom or atoms.
First claim
Opening claim text (preview).
The invention claimed is: 1. A p-type semiconductor film comprising a fullerene C 601 , wherein the fullerene C 60 includes carbon atoms, a single boron atom, and a single nitrogen atom, and the single boron atom is a substitution of a carbon atom at position 1 in the fullerene C 60 , the single nitrogen atom is a substitution of another carbon atom at position 60 in the fullerene C 60 . 2. A p-type semiconductor film comprising a structure where one of carbon atoms constituting a fullerene C 70 is substituted by one boron atom and another carbon atom of the carbon atoms constituting a fullerene C 70 is substituted by one nitrogen atom, wherein a substitution position of the one boron atom and a substitution position of the one nitrogen atom are respectively a 1st position and a 2nd position or respectively 1st position and 70th position. 3. An electronic device comprising the p-type semiconductor film according to claim 1 . 4. An electronic device comprising: a source electrode, a drain electrode, a gate electrode, and a semiconductor film, wherein the semiconductor film is the p-type semiconductor film according to claim 1 .
Assignees
Inventors
Classifications
comprising boron · CPC title
Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title
Carbides · CPC title
After-treatment · CPC title
Boron carbide · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US11031558B2 cover?
- A p-type semiconductor film including heterofullerene having a further sufficiently high hole mobility is provided. The p-type semiconductor film contains heterofullerene in which n+r number (where n and r are both positive odd numbers) of carbon atoms constituting a fullerene are substituted by n number of boron atom or atoms and r number of nitrogen atom or atoms.
- Who is the assignee on this patent?
- Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L51/0046. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 08 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).