Phase-change material (PCM) radio frequency (RF) switches with trench metal plugs for RF terminals

Patent metadata

Field	Value
Publication number	US-11031331-B2
Application number	US-201916685121-A
Country	US
Kind code	B2
Filing date	Nov 15, 2019
Priority date	Aug 14, 2018
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

First claim

The invention claimed is:

1. A radio frequency (RF) switch comprising:
a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM and extending outward and transverse to said PCM;
RF terminals comprising a trench metal liner separated from a trench metal plug by a dielectric liner;
said trench metal liner of said RF terminals being ohmically connected to passive segments of said PCM;
said trench metal plug of at least one of said RF terminals being ohmically separated from and capacitively coupled to said trench metal liner of said RF terminals by said dielectric liner.

2. The RE switch of claim 1 , wherein said trench metal plug is connected to a first interconnect metal overhang to as to further capacitively couple said trench metal liner with said trench metal plug.

3. The RF switch of claim 1 , further comprising an overhang region formed by a trench metal liner extension, a dielectric liner extension, and a trench metal plug extension, said overhang region further capacitively couples said trench metal liner with said trench metal plug.

4. The RF switch of claim 1 , further comprising a contact uniformity support layer over said PCM.

5. The RE switch of claim 4 , wherein said contact uniformity support layer comprises Si X N Y .

6. The RF switch of claim 4 , wherein said contact uniformity support layer is a bi-layer that comprises material selected from the group consisting of SiO 2 and Si X N Y .

7. The RF switch of claim 1 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

8. The RE switch of claim 1 , further comprising a thermally conductive and electrically insulating layer situated over said heating element.

9. The RF switch of claim 8 , wherein said thermally conductive and electrically insulating layer comprises material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), silicon carbide (SiC), diamond, and diamond-like carbon.

10. A radio frequency (RF) switch comprising:
a phase-change material (PCM);
an RE terminal comprising a trench metal liner, a dielectric liner over said trench metal liner, and a trench metal plug over said dielectric liner;
said trench metal liner of said RF terminal being ohmically connected to said PCM;
said trench metal plug of said RF terminal being ohmically separated from and capacitively coupled to said trench metal liner of said RE terminal.

11. The RF switch of claim 10 , wherein said trench metal plug is connected to a first interconnect metal overhang to as to further capacitively couple said trench metal liner with said trench metal plug.

12. The RF switch of claim 10 , further comprising an overhang region formed by a trench metal liner extension, a dielectric liner extension, and a trench metal plug extension, said overhang region further capacitively couples said trench metal liner with said trench metal plug.

13. The RF switch of claim 10 , further comprising a contact uniformity support layer over said PCM, wherein said contact uniformity support layer comprises Si X N Y .

14. The RF switch of claim 10 , further comprising a contact uniformity support layer over said PCM, wherein said contact uniformity support layer is a bi-layer that comprises material selected from the group consisting of SiO 2 and Si X N Y .

15. The RF switch of claim 10 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

16. A method for fabricating a radio frequency (RF) switch, said method comprising:
forming a phase-change material (PCM);
forming a trench metal liner of an RF terminal, said trench metal liner being ohmically connected to said PCM;
forming a dielectric liner over said trench metal liner;
forming a trench metal plug of said RF terminal over said dielectric liner, said trench metal plug being capacitively coupled to said trench metal liner.

17. The method of claim 16 , further comprising forming a first interconnect metal overhang to further capacitively couple said trench metal liner with said trench metal plug.

18. The method of claim 16 , further comprising forming an overhang region by a trench metal liner extension, a dielectric liner extension, and a trench metal plug extension, wherein said overhang region further capacitively couples said trench metal liner with said trench metal plug.

19. The method of claim 16 , further comprising forming a contact uniformity support layer over said PCM.

20. The method of claim 16 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

Assignees

• Newport Fab Llc

Inventors

• El-Hinnawy Nabil
• Slovin Gregory P
• Rose Jefferson E
• Howard David J

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/496 Primary

  Capacitor integral with wiring layers · CPC title

• H10W20/495 Primary

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H10N79/00

  Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10) · CPC title