Micro-ring modulator

Patent metadata

Field	Value
Publication number	US-11029465-B1
Application number	US-202016832023-A
Country	US
Kind code	B1
Filing date	Mar 27, 2020
Priority date	Mar 27, 2020
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

One illustrative device disclosed herein includes a micro-ring modulator that comprises an inner ring, an outer ring and a doped waveguide ring positioned between the inner ring and the outer ring. The device also includes an upper bus waveguide that is positioned vertically above at least a portion of the doped waveguide ring and at least a portion of the outer ring.

First claim

The invention claimed is:

1. A device, comprising:
a micro-ring modulator that comprises an inner ring, an outer ring and a doped waveguide ring positioned between the inner ring and the outer ring; and
an upper bus waveguide that is positioned vertically above at least a portion of the doped waveguide ring and at least a portion of the outer ring,
a lower waveguide, said lower waveguide comprising a first segment and a second segment that are spaced apart from one another, wherein the upper bus waveguide is also positioned vertically above at least a portion of the first segment and above at least a portion of the second segment,
wherein the device further comprises a first heater structure positioned within the inner ring and a second heater structure positioned around an entire outer circumference of the outer ring.

2. The device of claim 1 , wherein the upper bus waveguide comprises:
a first portion that is positioned vertically above a space between the first segment of the lower waveguide and the outer ring; and
a second portion that is positioned vertically above a space between the second segment of the lower waveguide and the outer ring.

3. The device of claim 1 , wherein, when viewed from above, the upper bus waveguide is a substantially linear line-type structure.

4. The device of claim 1 , wherein, when viewed from above, the upper bus waveguide comprises a non-linear section.

5. The device of claim 4 , wherein the non-linear section is an arcuate section.

6. The device of claim 4 , wherein at least a portion of the non-linear section is positioned vertically above a portion of the doped waveguide ring.

7. The device of claim 1 , wherein the first segment of the lower waveguide comprises a first end, the second segment of the lower waveguide comprises a second end, the upper bus waveguide comprises a third end and a fourth end, wherein at least a portion of the third end is positioned vertically above at least a portion of the first end and at least a portion of the fourth end is positioned vertically above at least a portion of the second end.

8. The device of claim 7 , wherein the first end, the second end, the third end and the fourth end are tapered.

9. The device of claim 1 , wherein the upper bus waveguide is vertically spaced apart from a portion of at least one of the inner ring, the doped waveguide ring and the outer ring of the micro-ring modulator.

10. A device, comprising:
a micro-ring modulator comprising an inner ring, an outer ring and a doped waveguide ring positioned between the inner ring and the outer ring;
a lower waveguide, the lower waveguide comprising a first segment and a second segment that are spaced apart from one another; and
an upper bus waveguide comprising a first portion, a second portion, and a third portion located between the first portion and the second portion, wherein the first portion is positioned vertically above at least a portion of the first segment, the second portion is positioned vertically above at least a portion of the second segment and the third portion is positioned vertically above and vertically spaced apart from a portion of at least one of the inner ring, the doped waveguide ring and the outer ring of the micro-ring modulator,
wherein the device further comprises a first heater structure positioned within the inner ring and a second heater structure positioned around an entire outer circumference of the outer ring.

11. The device of claim 10 , wherein the lower waveguide, the inner ring, the outer ring and the doped waveguide ring comprise silicon and the upper bus waveguide comprises silicon nitride.

12. The device of claim 10 , wherein the upper bus waveguide comprises:
a fourth portion positioned between the first portion and the third portion, wherein the fourth portion is positioned vertically above a space between the first segment of the lower waveguide and the outer ring; and
a fifth portion positioned between the second portion and the third portion, wherein the fifth portion is positioned vertically above a space between the second segment of the lower waveguide and the outer ring.

13. The device of claim 10 , wherein, when viewed from above, the upper bus waveguide comprises a non-linear section.

14. The device of claim 13 , wherein the non-linear section is an arcuate section.

15. The device of claim 13 , wherein at least a portion of the non-linear section is positioned vertically above a portion of at least one of the inner ring, the doped waveguide ring and the outer ring of the micro-ring modulator.

Assignees

• Globalfoundries Us Inc

Inventors

• Rakowski Michal
• Bian Yusheng
• Jacob Ajey Poovannummoottil
• Shank Steven M

Classifications

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0147

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• G02B6/136

  by etching · CPC title

• G02B6/134

  by substitution by dopant atoms · CPC title

• G02B6/125 Primary

  Bends, branchings or intersections · CPC title