Semiconductor device for internal combustion engine ignition

Patent metadata

Field	Value
Publication number	US-11028814-B2
Application number	US-201815973982-A
Country	US
Kind code	B2
Filing date	May 8, 2018
Priority date	Jun 30, 2017
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A semiconductor device for internal combustion engine ignition includes: a power semiconductor switching device that switches ON and OFF in accordance with a control signal provided by an external control circuit for causing a spark plug to produce sparks via an ignition coil and an external power source; an auxiliary voltage circuit that generates and applies an auxiliary voltage responsive to a collector voltage of the power semiconductor switching device to the gate of the power semiconductor switching device; and a constant current circuit that regulates current from the auxiliary voltage circuit to the gate of the power semiconductor switching device when a high-voltage surge originating from the external power source is applied to the auxiliary voltage circuit via a primary winding of the ignition coil.

First claim

What is claimed is:

1. A semiconductor device for internal combustion engine ignition, comprising:
a power semiconductor switching device that switches ON and OFF in accordance with a control signal provided by an external control circuit for causing a spark plug to produce sparks, the power semiconductor switching device including a collector to which a primary winding of an ignition coil is to be connected and a gate to which the control signal is to be inputted;
an auxiliary voltage circuit that generates and applies an auxiliary voltage responsive to a collector voltage of the power semiconductor switching device to the gate of the power semiconductor switching device; and
a constant current circuit that is interposed between the auxiliary voltage circuit and the gate of the power semiconductor switching device and that limits current flowing through the constant current circuit from the auxiliary voltage circuit to the gate of the power semiconductor switching device so as to regulate the current even if a high-voltage surge originating from an external power source connected to the primary winding is applied to the auxiliary voltage circuit via the primary winding.

2. The semiconductor device according to claim 1 , further comprising:
an overheating detection circuit that detects a temperature of the power semiconductor switching device; and
a semiconductor switch connected between the gate of the power semiconductor switching device and ground, the semiconductor switch switching ON upon receiving an overheating detection signal from the overheating detection circuit so as to ground the gate of the power semiconductor switching device.

3. The semiconductor device according to claim 2 , wherein the constant current circuit limits the current flowing from the auxiliary voltage circuit to the gate of the power semiconductor switching device to less than a maximum allowable current prescribed for the semiconductor switch.

4. The semiconductor device according to claim 2 , wherein the overheating detection circuit includes a diode for detecting the temperature of the power semiconductor switching device and an inverter for outputting the overheating detection signal.

5. The semiconductor device according to claim 1 , wherein the auxiliary voltage circuit includes a normally-on power semiconductor device.

6. The semiconductor device according to claim 1 , wherein the constant current circuit includes a power semiconductor device and a negative-feedback differential amplifier that has an output terminal connected to the gate of the power semiconductor device.

7. The semiconductor device according to claim 1 , wherein the semiconductor device is formed on a single chip.

Assignees

• Fuji Electric Co Ltd

Inventors

• Miura Hideki

Classifications

• H03K17/0828 Primary

  in composite switches · CPC title

• F02P3/0552

  Opening or closing the primary coil circuit with semiconductor devices · CPC title

• F02P3/051

  Opening or closing the primary coil circuit with semiconductor devices · CPC title

• F02P9/007

  by supplementary electrical discharge in the pre-ionised electrode interspace of the sparking plug, e.g. plasma jet ignition · CPC title

• H03K17/74

  by the use, as active elements, of diodes (by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70) · CPC title