Copper-ceramic bonded body and insulation circuit substrate

Patent metadata

Field	Value
Publication number	US-11028022-B2
Application number	US-201716312479-A
Country	US
Kind code	B2
Filing date	Jun 28, 2017
Priority date	Jun 30, 2016
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 μm or more and 1.0 μm or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer.

First claim

What is claimed is:

1. A copper-ceramic bonded body comprising:
a copper member formed of copper or a copper alloy; and
a ceramic member formed of silicon nitride,
wherein the copper member and the ceramic member are bonded to form the copper-ceramic bonded body,
at a bonding interface of the copper member and the ceramic member, a nitride compound layer including one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer are formed in order from the ceramic member side,
a thickness of the nitride compound layer is 0.47 μm or more and 0.89 μm or less,
an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member,
Cu and Si are present at a grain boundary of the nitride compound layer, and
wherein 90° peeling strength between the copper member and the ceramic member is 11.0 kN/m or more and 16.4 kN/m or less.

2. The copper-ceramic bonded body according to claim 1 ,
wherein Ag particles are dispersed in the nitride compound layer.

3. The copper-ceramic bonded body according to claim 2 ,
wherein a particle diameter of the Ag particles dispersed in the nitride compound layer is in a range of 10 nm or more and 100 nm or less.

4. The copper-ceramic bonded body according to claim 2 ,
wherein a ratio C2/C1 is 0.8 or less, wherein,
C1 is an average Ag concentration in a region of the nitride compound layer from the interface with the ceramic member to a position 25% of a total thickness of the nitride compound layer, and
C2 is an average Ag concentration in a region of the nitride compound layer from the interface with the Ag—Cu eutectic layer to a position 25% of the total thickness of the nitride compound layer from the interface with the copper member.

5. An insulation circuit substrate comprising:
a copper layer formed of copper or a copper alloy; and
a ceramic substrate formed of silicon nitride,
wherein the copper layer is formed on a surface of the ceramic substrate, and
the copper layer and the ceramic substrate are formed of the copper-ceramic bonded body according to claim 1 .

6. The copper-ceramic bonded body according to claim 3 ,
wherein a ratio C2/C1 is 0.8 or less, wherein,
C1 is an average Ag concentration in a region of the nitride compound layer from the interface with the ceramic member to a position 25% of a total thickness of the nitride compound layer, and
C2 is an average Ag concentration in a region of the nitride compound layer from the interface with the Ag—Cu eutectic layer to a position 25% of the total thickness of the nitride compound layer from the interface with the copper member.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/611

  Bolts or screws · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W40/10

  Arrangements for heating · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title