Oscillator and imaging device

Patent metadata

Field	Value
Publication number	US-11025199-B2
Application number	US-202016795987-A
Country	US
Kind code	B2
Filing date	Feb 20, 2020
Priority date	Feb 20, 2019
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

An oscillator comprising: a resonator including a negative resistance element; a voltage bias circuit configured to apply a voltage across the negative resistance element; and a first shunt element in which a resistor and a capacitor are electrically connected in series, wherein the negative resistance element and the first shunt element are electrically connected in parallel to the voltage bias circuit.

First claim

What is claimed is:

1. An oscillator comprising:
a resonator including a negative resistance element;
a voltage bias circuit configured to apply a voltage across the negative resistance element; and
a shunt element in which a resistor and a capacitor are electrically connected in series; and
an antenna provided at a distance from the shunt element,
wherein the negative resistance element and the shunt element are electrically connected in parallel to the voltage bias circuit.

2. The oscillator according to claim 1 , wherein a wire connecting the negative resistance element and the shunt element has a length of not more than ¼ of a wavelength of an electromagnetic wave produced by the resonator.

3. The oscillator according to claim 1 , wherein the resonator and the shunt element are formed on a same chip.

4. The oscillator according to claim 1 , wherein the shunt element is a first shunt element,
wherein the oscillator further comprises one or a plurality of second shunt elements,
wherein each of the one or a plurality of second shunt elements includes a capacitor, and
wherein each of the one or a plurality of second shunt elements, the negative resistance element, and the first shunt element are electrically connected in parallel to the voltage bias circuit.

5. The oscillator according to claim 4 , wherein a wire connecting at least one of the one or a plurality of second shunt elements and the negative resistance element has a length of not more than ¼ of a wavelength of an electromagnetic wave produced by the resonator.

6. The oscillator according to claim 4 , wherein the first shunt element and the one or a plurality of second shunt elements are each connected to the negative resistance element by a wire having a length of not more than ¼ of a wavelength corresponding to a cut-off frequency on a high frequency side.

7. The oscillator according to claim 4 , wherein the first shunt element and the one or a plurality of second shunt elements each suppress oscillation of an electromagnetic wave in a higher frequency band as a wire for connection to the negative resistance element is shorter.

8. The oscillator according to claim 4 , wherein the resonator and one of the one or a plurality of second shunt elements are formed on a same chip.

9. The oscillator according to claim 4 , wherein the first shunt element and the one or a plurality of second shunt elements are each formed on different members.

10. The oscillator according to claim 4 , wherein each of the one or a plurality of second shunt elements does not include a resistor.

11. The oscillator according to claim 1 , further comprising:
a first substrate on which the voltage bias circuit is formed; and
a second substrate on which the resonator is formed,
wherein the first substrate and the second substrate are electrically connected via a cable.

12. The oscillator according to claim 1 , wherein the resistor of the shunt element has a resistance value of at least ½ and not more than two times of an absolute value of an impedance of the negative resistance element in a negative resistance region, and
wherein the negative resistance region is a region where a current decreases as a voltage increases in voltage-current characteristics.

13. The oscillator according to claim 1 , wherein R/10 ≥1/(2πf 0 ×C) is satisfied, where C is a capacitance value of the capacitor of the first shunt element, R is a resistance value of the resistor of the first shunt element, and f 0 is a cut-off frequency on a low frequency side of the first shunt element.

14. The oscillator according to claim 1 , wherein a frequency of an electromagnetic wave produced by the resonator is at least 30 GHz and not more than 30 THz.

15. The oscillator according to claim 1 , wherein the shunt element includes a capacitor in which a dielectric film is sandwiched between two electrodes.

16. An imaging device comprising:
an illumination device including the oscillator according to claim 1 ; and
an imaging element configured to image a subject irradiated with an electromagnetic wave produced by the oscillator.

17. An oscillator comprising:
a resonator including a negative resistance element;
a voltage bias circuit configured to apply a voltage across the negative resistance element; and
a shunt element in which a resistor and a capacitor are electrically connected in series,
wherein the negative resistance element and the shunt element are electrically connected in parallel to the voltage bias circuit, and
wherein the voltage bias circuit applies an alternating voltage across the negative resistance element.

18. An oscillator comprising:
a resonator including a negative resistance element;
a voltage bias circuit configured to apply a voltage across the negative resistance element; and
a shunt element in which a resistor and a capacitor are electrically connected in series,
wherein the negative resistance element and the first shunt element are electrically connected in parallel to the voltage bias circuit, and
wherein the capacitor is formed of a MIM (Metal-Insulator-Metal) capacitor.

19. The oscillator according to claim 18 , wherein a wire connecting the negative resistance element and the shunt element has a length of not more than ¼ of a wavelength of an electromagnetic wave produced by the resonator.

20. The oscillator according to claim 18 , wherein the shunt element is a first shunt element,
wherein the oscillator further comprises one or a plurality of second shunt elements,
wherein each of the one or a plurality of second shunt elements includes a capacitor, and
wherein each of the one or a plurality of second shunt elements, the negative resistance element, and the first shunt element are electrically connected in parallel to the voltage bias circuit.

Assignees

• Canon Kk

Inventors

• Kandori Atsushi
• Kaifu Noriyuki

Classifications

• H01Q23/00

  Antennas with active circuits or circuit elements integrated within them or attached to them · CPC title

• H03B7/08 Primary

  being a tunnel diode · CPC title

• H03B5/129

  the parameter being a bias voltage or a power supply · CPC title

• H03B7/14

  active element being semiconductor device · CPC title

• H03B5/20 Primary

  with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator · CPC title