Antenna-integrated module and radar device

Patent metadata

Field	Value
Publication number	US-11024953-B2
Application number	US-201615046933-A
Country	US
Kind code	B2
Filing date	Feb 18, 2016
Priority date	Mar 3, 2015
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

An antenna-integrated module includes: one or more semiconductor chips each including a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters.

First claim

What is claimed is:

1. An antenna-integrated module comprising:
one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters;
an insulating layer that surrounds the one or more semiconductor chips;
a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer;
one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters, the one or more first antenna elements being disposed over the silicon substrate and not being disposed over the insulating layer surrounding the one or more semiconductor chips; and
one or more second antenna elements that are provided over the insulating layer with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters, the one or more second antenna elements being disposed over the insulating layer surrounding the one or more semiconductor chips and not being disposed over the silicon substrate.

2. The antenna-integrated module according to claim 1 , wherein
at least one of (i) the one or more first antenna elements and (ii) the one or more second antenna elements has a differential configuration.

3. The antenna-integrated module according to claim 1 , wherein
the insulating layer is stacked on a first surface of a conductor plate.

4. The antenna-integrated module according to claim 1 , wherein
the one or more first antenna elements and the one or more second antenna elements are configured such that the one or more first antenna elements and the one or more second antenna elements radiate toward a second surface of the re-distribution layer.

5. The antenna-integrated module according to claim 1 , wherein
the one or more semiconductor chips each have one or more phase adjusting circuits that are connected to the one or more frequency converters.

6. The antenna-integrated module according to claim 1 , wherein
the one or more semiconductor chips each have one or more amplitude adjusting circuits that are connected to the one or more frequency converters.

7. The antenna-integrated module according to claim 1 , wherein
the semiconductor chips are disposed separately from each other; and
the one or more second antenna elements are disposed between the semiconductor chips.

8. A radar device comprising:
an antenna-integrated module; and
a second substrate on which the antenna-integrated module is mounted,
the antenna-integrated module including:
one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters;
an insulating layer that surrounds the one or more semiconductor chips;
a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer;
one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters, the one or more first antenna elements being disposed over the silicon substrate and not being disposed over the insulating layer surrounding the one or more semiconductor chips; and
one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters, the one or more second antenna elements being disposed over the insulating layer surrounding the one or more semiconductor chips and not being disposed over the silicon substrate.

9. The radar device according to claim 8 , wherein
the insulating layer is stacked on a first surface of a conductor plate; and
the second substrate has a third conductor pattern in a portion of the second substrate other than a portion facing the one or more first antenna elements and the one or more second antenna elements of the antenna-integrated module.

10. The radar device according to claim 8 , wherein
the second substrate has a fourth conductor pattern that is located in a portion facing the one or more first antenna elements and the one or more second antenna elements of the antenna-integrated module and the second substrate has a reflection plate that is located between the antenna-integrated module and the fourth conductor pattern in a portion facing the one or more first antenna elements and the one or more second antenna elements.

11. The radar device according to claim 8 , wherein
the second substrate has one or more phase adjusting circuits connected to the one or more frequency converters.

12. The radar device according to claim 8 , wherein
the second substrate has one or more amplitude adjusting circuits connected to the one or more frequency converters.

13. An antenna-integrated module comprising:
one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, a plurality of frequency converters, and one or more external terminals;
an insulating layer that surrounds the one or more semiconductor chips;
a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer;
one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to a first part of the plurality of frequency converters, the one or more first antenna elements being connected to the part of the plurality of frequency converters without the one or more external terminals; and
one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to a second part of the plurality of frequency converters, the one or more second antenna elements being connected to the other part of the plurality of frequency converters via the one or more external terminals.

14. The antenna-integrated module according to claim 13 , wherein
the antenna-integrated module is mounted on a second substrate of a radar device.

Assignees

• Panasonic Corp

Inventors

• Sato Junji
• Shiozaki Ryosuke

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title

• H10W44/248

  for antennas · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title