Tunable frequency selective limiter

Patent metadata

Field	Value
Publication number	US-11024932-B1
Application number	US-201916520492-A
Country	US
Kind code	B1
Filing date	Jul 24, 2019
Priority date	Jul 24, 2019
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

A tunable frequency selective limiter is disclosed. In one or more embodiments, the tunable frequency selective limiter includes a first electrically conductive path. The tunable frequency selective limiter also includes a ferrimagnetic layer disposed adjacent to the first electrically conductive path. The tunable frequency selective limiter further includes a second electrically conductive path coiled around the first electrically conductive path and the ferrimagnetic layer. An electromagnetic current transmitting through the second electrically conductive path produces a magnetic field coupled to the ferrimagnetic layer. The tunable frequency selective limiter further includes a dielectric layer, wherein the ferrimagnetic layer is disposed on the dielectric layer. The portions of the second electrically conductive path that are at the interface of the dielectric layer and the ferrimagnetic layer may be embedded into the dielectric layer or may be disposed on the surface of the dielectric layer.

First claim

What is claimed is:

1. A tunable frequency selective limiter; comprising:
a first electrically conductive path;
a ferrimagnetic layer disposed adjacent to the first electrically conductive path;
a second electrically conductive path coiled around the first electrically conductive path and the ferrimagnetic layer, wherein electromagnetic current transmitting through the second electrically conductive path produces a magnetic field coupled to the ferrimagnetic layer;
a dielectric layer, wherein the ferrimagnetic layer is disposed on the dielectric layer, wherein portions of the second electrically conductive path at an interface of the dielectric layer and the ferrimagnetic layer are at least one of embedded into the dielectric layer or disposed on a surface of the dielectric layer.

2. The tunable frequency selective limiter of claim 1 , further comprising at least one permanent magnet, wherein the at least one permanent magnet is configured to set a magnetic bias on the tunable frequency selective limiter.

3. The tunable frequency selective limiter of claim 1 , wherein the first electrically conductive path is further configured to discharge plasma upon reaching a specific power threshold.

4. The tunable frequency selective limiter of claim 1 , wherein at least one of a frequency tunable characteristic or a bandwidth tunable characteristic of the tunable frequency selective limiter may be altered by a change in the electromagnetic current through the second conductive path.

5. The tunable frequency selective limiter of claim 1 , wherein the tunable frequency selective limiter is fabricated on a wafer.

6. The tunable frequency selective limiter of claim 1 , wherein a depth of the first electrically conductive path is between 0.5 μm and 0.2 mm.

7. The tunable frequency selective limiter of claim 1 , wherein a cross-sectional area of the second electrically conductive path is between 100 and 10,000 μm2.

8. The tunable frequency selective limiter of claim 1 , wherein the second electrically conductive path is comprised of an electrophoretically deposited metal.

9. The tunable frequency selective limiter of claim 1 , wherein the second electrically conductive path is comprised of a wire.

10. The tunable frequency selective limiter of claim 1 , further comprising a metal layer disposed on a least one side of the tunable frequency selective limiter, wherein the metal is configured to dissipate heat from the tunable frequency selective limiter.

11. The tunable frequency selective limiter of claim 1 , further comprising at least one ground plane conductor.

12. The tunable frequency selective limiter of claim 1 , wherein the ferrimagnetic layer comprises yttrium iron garnet.

13. The tunable frequency selective limiter of claim 12 , wherein the yttrium iron garnet is an epitaxial grown film.

14. The tunable frequency selective limiter of claim 12 , wherein the yttrium iron garnet is a crystal.

Assignees

• Rockwell Collins Inc

Inventors

• Lovseth Jonathan A

Classifications

• H01P1/215

  using ferromagnetic material · CPC title

• H01P1/23 Primary

  using ferromagnetic material · CPC title

• H01P1/218 Primary

  the ferromagnetic material acting as a frequency selective coupling element, e.g. YIG-filters · CPC title

• H03G11/006

  in circuits having distributed constants (H03G11/008 takes precedence) · CPC title

• H01P11/007

  Manufacturing frequency-selective devices (resonators H01P11/008) · CPC title