Quantum dot light-emitting device

Patent metadata

Field	Value
Publication number	US-11024765-B2
Application number	US-202016844838-A
Country	US
Kind code	B2
Filing date	Apr 9, 2020
Priority date	Mar 17, 2016
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

A quantum dot light-emitting device includes: a first electrode; a second electrode opposite to the first electrode; an emission layer between the first electrode and the second electrode, the emission layer including quantum dots; and an inorganic layer between the emission layer and the second electrode, the inorganic layer including a metal halide.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode opposite to the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer comprising quantum dots;
a hole transport region between the first electrode and the emission layer; and
an inorganic layer between the emission layer and the second electrode, the inorganic layer comprising a metal halide,
wherein the metal halide comprises an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, or any combination thereof,
wherein an energy band gap of the inorganic layer is about 3.1 eV to about 4.6 eV, and
the quantum dots have a core-shell structure comprising a core comprising a first semiconductor crystal and a shell comprising a second semiconductor crystal.

2. The light-emitting device of claim 1 , wherein the inorganic layer further comprises a trivalent metal ion.

3. The light-emitting device of claim 1 , wherein the metal halide comprises a silver (Ag) halide, a cadmium (Cd) halide, a mercury (Hg) halide, a manganese (Mn) halide, an iron (Fe) halide, a cobalt (Co) halide, a nickel (Ni) halide, a copper (Cu) halide, a zinc (Zn) halide, or any combination thereof.

4. The light-emitting device of claim 1 , wherein a thickness of the inorganic layer is 200 to 1000 Å.

5. The light-emitting device of claim 1 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise a compound including a Group 12 element and a Group 16 element, a compound including a Group 13 element and a Group 15 element, a compound including a Group 14 element and a Group 16 element, or any combination thereof.

6. The light-emitting device of claim 1 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSTe, GaP, GaAs, GaSb, InP InAs, InSb, PbS, PbSe, PbTe, or any combination thereof.

7. The light-emitting device of claim 1 , wherein a second semiconductor of the second semiconductor crystal has an energy band gap equal to or greater than an energy band gap of a first semiconductor of the first semiconductor crystal.

8. The light-emitting device of claim 1 , wherein the hole transport region includes metal oxide nanoparticles, and the metal oxide nanoparticles include at least one selected from NiO, MoO 3 , Cr 2 O 3 , Bi 2 O 3 , a p-type ZnO, and a p-type GaN.

9. The light-emitting device of claim 1 , wherein the hole transport region includes an organic compound and the organic compound includes at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB(NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzene sulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (Pani/CSA), polyaniline/poly(4-styrene sulfonate) (PANI/PSS), a compound represented by Formula 201, and a compound represented by Formula 202:

in formulae 201 and 202,
L 201 to L 204 is each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group;
L 205 is selected from *—O—*′, *—S—*′, *—N(Q 201 )-*′, a substituted or unsubstituted C 1 -C 20 alkylene group, a substituted or unsubstituted C 2 -C 20 alkenylene group, a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group;
xa1 to xa4 is each independently an integer selected from 0 to 3;
xa5 is an integer selected from 1 to 10; and

R 201 to R 204 and Q 201 is each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group.

10. The light-emitting device of claim 1 , wherein a thickness of the hole transport region is 100 to 1000 Å.

11. A light-emitting device comprising:
a first electrode;
a second electrode opposite to the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer comprising quantum dots;
a hole transport region between the first electrode and the emission layer; and
an inorganic layer between the emission layer and the second electrode, the inorganic layer comprises a metal halide,
wherein the metal halide comprises an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, or any combination thereof, and
wherein the quantum dots have a core-shell structure comprising a core comprising a first semiconductor crystal and a shell comprising a second semiconductor crystal.

12. The light-emitting device of claim 11 , wherein the metal halide comprises a silver (Ag) halide, a cadmium (Cd) halide, a mercury (Hg) halide, a manganese (Mn) halide, an iron (Fe) halide, a cobalt (Co) halide, a nickel (Ni) halide, a copper (Cu) halide, a zinc (Zn) halide, or any combination thereof.

13. The light-emitting device of claim 11 , wherein a thickness of the inorganic layer is 200 to 1000 Å.

14. The light-emitting device of claim 11 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise a compound including a Group 12 element and a Group 16 element, a compound including a Group 13 element and a Group 15 element, a compound including a Group 14 element and a Group 16 element, or any combination thereof.

15. The light-emitting device of claim 11 , wherein a first semiconductor of the first semiconductor crystal and a second semiconductor of the second semiconductor crystal each independently comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSTe, GaP, GaAs, GaSb, InP InAs, InSb, PbS, PbSe, PbTe, or any combination thereof.

16. The light-emitting device of claim 11 , wh

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Yisu
• Kim Dongchan
• Park Eungseok
• Yun Wonmin
• Lee Byoungduk
• Ju Yongchan

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title

• H10H20/83

  Electrodes · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/811 Primary

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title