Compositions and methods for etching silicon nitride-containing substrates
US-2019074188-A1 · Mar 7, 2019 · US
Selective etch formulation for silicon oxide
US11024512B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-11024512-B1 |
| Application number | US-202016811558-A |
| Country | US |
| Kind code | B1 |
| Filing date | Mar 6, 2020 |
| Priority date | Mar 6, 2020 |
| Publication date | Jun 1, 2021 |
| Grant date | Jun 1, 2021 |
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Abstract
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Enhanced compositions and methods are provided for selectively etching silicon wafers, which is particularly useful in the context of silicon wafer manufacturing and processing applications. Optionally, a formulation is provided which selectively etches silicon dioxide in preference to aluminum oxide. Optionally, a formulation and method are provided that is substantially non-aqueous.
First claim
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What is claimed is: 1. A selective etch composition for processing silicon wafers, comprising about 1.0% to about 5.0% by weight hydrogen fluoride (HF), about 45.0% to about 90.0% by weight of a carboxylic acid component, and about 5.0% to about 50.0% by weight of trifluoroacetic acid anhydride. 2. The composition according to claim 1 , wherein said trifluoroacetic acid anhydride is present in about 10.0% to about 50.0% by weight. 3. The composition according to claim 1 , wherein said trifluoroacetic acid anhydride is present in about 15.0% to about 50.0% by weight. 4. The composition according to claim 1 , wherein said hydrogen fluoride is present in said composition from about 2.0% to about 5.0% by weight; said carboxylic acid is present in said composition from about 65.0% to about 80.0% by weight of said composition, and said trifluoroacetic acid is present in said composition from about 15.0% to about 50.0% by weight. 5. The composition according to claim 1 , wherein said hydrogen fluoride is present in said composition from about 2.0% to about 5.0% by weight; said carboxylic acid is present in said composition from about 75% to about 78.0% by weight of said composition, and said trifluoroacetic acid is present in said composition from about 20.0% to about 45.0% by weight. 6. The composition according to claim 1 , wherein said carboxylic acid is selected from the group of acetic acid, propionic acid, citric acid, butyric acid, hexanoic acid, or mixtures thereof. 7. The composition according to claim 6 , wherein said carboxylic acid is acetic acid. 8. The composition according to claim 1 , wherein a ratio of said carboxylic acid composition to trifluoroacetic acid is about 10:1 to about 1:1. 9. The composition according to claim 1 , wherein a pH of said composition is between about 1 and about 4. 10. The composition according to claim 1 , wherein said composition is non-aqueous. 11. The composition according to claim 1 , further comprising one or more ingredients selected from the group comprising a pH-adjusting agent, a corrosion control agent, and a surfactant. 12. The composition according to claim 1 , wherein said composition selectively removes silicon oxide over aluminum oxide in processing silicon wafers. 13. The composition according to claim 1 , wherein said composition has an etch rate of silicon nitride 100 times greater than said composition's etch rate of titanium nitride. 14. The composition according to claim 1 , wherein said composition is configured to selectively etch silicon oxide from the silicon wafers at room temperature. 15. A method of etching a silicon wafer with a composition comprising about 1.0% to about 5.0% by weight hydrogen fluoride (HF), about 45.0% to about 90.0% by weight of a carboxylic acid composition, and about 5.0% to about 50.0% by weight of trifluoroacetic acid anhydride. 16. The method of claim 15 , further comprising selectively etching silicon oxide from the silicon wafer at room temperature using the composition.
Assignees
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Classifications
Chemical etching · CPC title
- H10P50/283Primary
by chemical means · CPC title
containing a fluorine compound · CPC title
Electricity · mapped topic
- H01L21/31111Primary
Electricity · mapped topic
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- What does patent US11024512B1 cover?
- Enhanced compositions and methods are provided for selectively etching silicon wafers, which is particularly useful in the context of silicon wafer manufacturing and processing applications. Optionally, a formulation is provided which selectively etches silicon dioxide in preference to aluminum oxide. Optionally, a formulation and method are provided that is substantially non-aqueous.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 01 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).