Temperature detection device and power conversion device

Patent metadata

Field	Value
Publication number	US-11022499-B2
Application number	US-201916370012-A
Country	US
Kind code	B2
Filing date	Mar 29, 2019
Priority date	Apr 13, 2017
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

A temperature detection device which receives a temperature signal from a temperature sensor and outputs an electrical signal corresponding to the temperature signal. A temperature slope which is an amount of change in an output of the electric signal relative to an amount of change in the temperature signal is changed at a predetermined temperature threshold.

First claim

The invention claimed is:

1. A temperature detection device, comprising:
an output calculation unit configured to receive a temperature signal from a temperature sensor, the output calculation unit including a plurality of operational amplifiers to calculate outputs of an electric signal corresponding to the temperature signal, wherein resistance value ratios of feedback resistors and input resistors of the respective operational amplifiers are set to different values; and
an output selection unit configured to output the electrical signal corresponding to the temperature signal by selecting one of the outputs calculated by the output calculation unit, wherein, a temperature slope which is an amount of change in an output of the electric signal relative to an amount of change in the temperature signal is changed at a predetermined temperature threshold.

2. The temperature detection device according to claim 1 , wherein:
the temperature slope is changed at a plurality of predetermined temperature thresholds.

3. The temperature detection device according to claim 1 , wherein:
in a temperature range which the temperature of an object can take, a high-temperature range higher than the predetermined temperature threshold and a low-temperature range lower than the predetermined temperature threshold are set with reference to the predetermined temperature threshold, and the temperature slope in the high-temperature range is larger than that in the low-temperature range.

4. The temperature detection device according to claim 1 , wherein:
the temperature sensor includes a diode formed in an integrated circuit to drive a power semiconductor switching element which is used for power conversion.

5. The temperature detection device according to claim 1 , wherein:
the temperature sensor includes a thermistor to detect the temperature of a power semiconductor switching element which is used for power conversion.

6. The temperature detection device according to claim 1 , wherein:
in a temperature range which the temperature of an object can take, a high-temperature range higher than the predetermined temperature threshold and a low-temperature range lower than the predetermined temperature threshold are set with reference to the predetermined temperature threshold, and the temperature slope in the low-temperature range is larger than that in the high-temperature range.

7. The temperature detection device according to claim 1 , wherein:
the temperature sensor includes a diode formed in a chip of a power semiconductor switching element which is used for power conversion.

8. The temperature detection device according to claim 1 , wherein:
the output calculation unit is configured to calculate the outputs of the electric signal corresponding to the temperature signal by using different temperature slopes; and
the output selection unit is configured to output the electric signal by selecting one of the outputs calculated by the output calculation unit based on the predetermined temperature threshold.

9. The temperature detection device according to claim 8 , wherein:
the output selection unit includes a multiplexer to which outputs of the plurality of operational amplifiers are input and which selects an output of one of the operational amplifiers based on the predetermined temperature threshold.

10. The temperature detection device according to claim 9 , wherein:
the multiplexer has a point at which outputs of the plurality of operational amplifiers intersect as the predetermined temperature threshold.

11. A power conversion device comprising:
a power semiconductor switching element that is used for power conversion; and
the temperature detection device according to claim 1 that detects an operation junction temperature of the power semiconductor switching element.

12. The power conversion device according to claim 11 , wherein:
the temperature detection device is configured to change the temperature slope, according to an operation state of a load which is driven, and
in a temperature range which the operation junction temperature of the power semiconductor switching element can take, a high-temperature range higher than the predetermined temperature threshold and a low-temperature range lower than the predetermined temperature threshold are set with reference to the predetermined temperature threshold, and the temperature slope in the high-temperature range is larger than that in the low-temperature range.

13. The power conversion device according to claim 12 , wherein the load is a motor.

14. The power conversion device according to claim 11 , wherein:
the temperature detection device is configured to change the temperature slope, according to an operation state of a load which is driven, and
in a temperature range which the operation junction temperature of the power semiconductor switching element can take, a high-temperature range higher than the predetermined temperature threshold and a low-temperature range lower than the predetermined temperature threshold are set with reference to the predetermined temperature threshold, and the temperature slope in the low-temperature range is larger than that in the high-temperature range.

15. The power conversion device according to claim 14 , wherein the load is a motor.

16. A temperature detection device, comprising:
an output calculation unit configured to receive a temperature signal from a temperature sensor; and
an output selection unit configured to output an electrical signal corresponding to the temperature signal, wherein a temperature slope which is an amount of change in an output of the electric signal relative to an amount of change in the temperature signal is changed at a predetermined temperature threshold,
wherein
in a temperature range which the temperature of an object can take, a high-temperature range higher than the predetermined temperature threshold and a low-temperature range lower than the predetermined temperature threshold are set with reference to the predetermined temperature threshold, and the temperature slope in the low-temperature range is larger than that in the high-temperature range.

17. A power conversion device comprising:
a power semiconductor switching element that is used for power conversion; and
the temperature detection device according to claim 16 that detects an operation junction temperature of the power semiconductor switching element.

18. A temperature detection device, comprising:
an output calculation unit configured to receive a temperature signal from a temperature sensor, the temperature sensor including
a diode formed in a chip of a power semiconductor switching element which is used for power conversion, or
a diode formed in an integrated circuit to drive a power semiconductor switching element which is used for power conversion, or
a thermistor to detect a temperature of a power semiconductor switching element which is used for power conversion; and

an output selection unit configured to output an electrical signal corresponding to the temperature signal, wherein a temperature slope which is an amount of change in an output of the electric signal relative to an amount of change in the temperature signal is changed at a predetermined temperature threshold.

19. A power conversion device comprising:
the temperature detection device according to claim 18 , wherein
when the temperature sensor includes the diode formed in the chip of the power semiconductor switching element, the power conversion device compr

Assignees

• Fuji Electric Co Ltd

Inventors

• Ohashi Hidetomo

Classifications

• G01K7/25

  for modifying the output characteristic, e.g. linearising · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title