Method for producing cis,cis-1,2,4-cyclohexane tricarboxylic acid crystal

US11021428B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11021428-B2
Application numberUS-201816496593-A
CountryUS
Kind codeB2
Filing dateMar 19, 2018
Priority dateMar 29, 2017
Publication dateJun 1, 2021
Grant dateJun 1, 2021

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Abstract

Official abstract text for this publication.

An object of the present invention is to provide a method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals, from which high purity cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals are obtained. The method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals of the present invention comprises the following steps: Step 1: measuring a mass ratio (cis/trans ratio) of cis,cis-1,2,4-cyclohexanetricarboxylic acid to trans,trans-1,2,4-cyclohexanetricarboxylic acid in an aqueous starting material solution comprising the cis,cis-1,2,4-cyclohexanetricarboxylic acid to give an aqueous starting material solution for crystal precipitation having a cis/trans ratio of 10 or more; and Step 2: subjecting the aqueous starting material solution for crystal precipitation obtained in step 1 to crystal precipitation.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing one or more cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals, the method comprising: selecting and/or adjusting a cis/trans mass ratio of cis,cis-1,2,4-cyclohexanetricarboxylic acid to trans,trans-1,2,4-cyclohexanetricarboxylic acid in an aqueous starting material solution comprising the cis,cis-1,2,4-cyclohexanetricarboxylic acid to obtain a selected aqueous starting material solution for crystal precipitation having a cis/trans ratio of 19.7 or more; and subjecting the selected aqueous starting material solution to crystal precipitation, to obtain resulting cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals having a purity of 98.8% by mass or more. 2. The method of claim 1 , wherein the subjecting comprises concentrating the selected aqueous starting material solution to obtain a solvent-to-solute mass ratio of the selected aqueous starting material solution in a range of from 0.1 to 5. 3. The method of claim 1 , wherein the cis/trans ratio is 40 or more. 4. The method of claim 1 , wherein the resulting cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals have a purity of 99.0% by mass or more. 5. The method of claim 1 , wherein a recovery rate of cis,cis-1,2,4-cyclohexanetricarboxylic acid in the subjecting is 60% by mass or more, relative to a total 1,2,4-cyclohexanetricarboxylic acid mass. 6. The method of claim 1 , wherein the subjecting comprises adding seed crystals to the selected aqueous starting material solution. 7. The method of claim 6 , wherein the seed crystals are added in an amount of 0.01 to 40% by mass based on cis,cis-1,2,4-cyclohexanetricarboxylic acid contained in the selected aqueous starting material solution. 8. The method of claim 6 , wherein the adding of the seed crystals is carried out at a temperature of the selected aqueous starting material solution in a range of from 1 to 60° C. 9. The method of claim 3 , wherein resulting cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals have a purity of 90% by mass or more. 10. The method of claim 3 , wherein a recovery rate of cis,cis-1,2,4-cyclohexanetricarboxylic acid in the subjecting is 60% by mass or more, relative to a total 1,2,4-cyclohexanetricarboxylic acid mass. 11. The method of claim 3 , wherein the subjecting comprises adding seed crystals to the selected aqueous starting material solution. 12. The method of claim 11 , wherein the seed crystals are added in an amount in a range of from 0.01 to 40% by mass based on cis,cis-1,2,4-cyclohexanetricarboxylic acid contained in the selected aqueous starting material solution. 13. The method of claim 11 , wherein a temperature of the selected aqueous starting material solution when the seed crystals are added is in a range of from 1 to 60° C. 14. The method of claim 1 , wherein the resulting cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals have a purity of 99.1% by mass or more. 15. The method of claim 1 , wherein the cis/trans ratio is 20 or more. 16. The method of claim 1 , wherein the cis/trans ratio is 35 or more. 17. The method of claim 1 , wherein the cis/trans ratio is 45 or more. 18. The method of claim 1 , wherein the cis/trans ratio no more than 1000. 19. The method of claim 3 , wherein the recovery rate of cis,cis-1,2,4-cyclohexanetricarboxylic acid in the subjecting is 65% by mass or more. 20. The method of claim 3 , wherein the recovery rate of cis,cis-1,2,4-cyclohexanetricarboxylic acid in the subjecting is 70% by mass or more.

Assignees

Inventors

Classifications

  • C07C51/43Primary

    by change of the physical state, e.g. crystallisation · CPC title

  • Crystalline forms, e.g. polymorphs · CPC title

  • The ring being saturated · CPC title

  • Completely hydrogenated benzenedicarboxylic acids · CPC title

  • Saturated compounds having a carboxyl group bound to a six-membered ring · CPC title

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What does patent US11021428B2 cover?
An object of the present invention is to provide a method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals, from which high purity cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals are obtained. The method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals of the present invention comprises the following steps: Step 1: measuring a mass ratio (cis/trans ratio…
Who is the assignee on this patent?
Mitsubishi Gas Chemical Co
What technology area does this patent fall under?
Primary CPC classification C07C51/43. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 01 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).