Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-11018472-B2
Application number	US-202016752504-A
Country	US
Kind code	B2
Filing date	Jan 24, 2020
Priority date	Dec 9, 2015
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.

First claim

What is claimed is:

1. A semiconductor laser device comprising:
a mount section;
a first wiring and a second wiring connected to an upper surface of the mount section;
a first semiconductor laser element having an electrode at an upper side, an electrode at a lower side and a ridge;
the electrode at the lower side of the first semiconductor laser element is joined to an upper surface of the first wiring; and
a third wiring joined to the electrode at the upper surface of the first semiconductor laser element,
wherein:
the first semiconductor laser element has a front side which is a laser emission end surface, a back side opposite to the front side and sides between the front side and the back side, the second wiring includes an L shape portion in plan view,
the L shape portion has a portion opposite to the side of the first semiconductor laser element and a portion opposite to the back side of the first semiconductor laser element, and
a width of the second wiring on the back side is larger than a width of the second wiring on the front side along a direction perpendicular to a longitudinal direction of the first semiconductor laser element.

2. The semiconductor laser device according to claim 1 , further comprising a second semiconductor laser element having an electrode at an upper side, an electrode at a lower side and a ridge, wherein the third wiring is electrically connected to the electrode at the lower side of the second semiconductor laser element.

3. The semiconductor laser device according to claim 2 , wherein the first semiconductor laser element and the second semiconductor laser element are connected in series.

4. The semiconductor laser device according to claim 3 , wherein each of sides close to the mount section of the first semiconductor laser element and the second semiconductor laser element has a same polarity.

5. The semiconductor laser device according to claim 4 , wherein the each of the sides has a p-type layer.

6. A semiconductor laser device comprising:
a mount section;
a first wiring and a second wiring connected to an upper surface of the mount section;
a first semiconductor laser element having an electrode at an upper side, an electrode at a lower side and a ridge;
the electrode at the lower side of the first semiconductor laser element is soldered to an upper surface of the first wiring; and
a third wiring soldered to the electrode at the upper surface of the first semiconductor laser element, wherein:
the first semiconductor laser element has a front side which is a laser emission end surface, a back side opposite to the front side and sides between the front side and the back side, the second wiring includes an L shape in plan view,
the L shape portion has a portion opposite to the side of the first semiconductor laser element and a portion opposite to the back side of the first semiconductor laser element, and
a width of the second wiring on the back side is larger than a width of the second wiring on the front side along a direction perpendicular to a longitudinal direction of the first semiconductor laser element.

7. The semiconductor laser device according to claim 6 , further comprising a second semiconductor laser element having an electrode at an upper side, an electrode at a lower side and a ridge, wherein the third wiring is electrically connected to the electrode at the lower side of the second semiconductor laser element.

8. The semiconductor laser device according to claim 7 , wherein the first semiconductor laser element and the second semiconductor laser element are connected in series.

9. The semiconductor laser device according to claim 8 , wherein each of sides close to the mount section of the first semiconductor laser element and the second semiconductor laser element has a same polarity.

10. The semiconductor laser device according to claim 9 , wherein the each of the sides has a p-type layer.

Assignees

• Panasonic Corp

Inventors

• Nozaki Shinichiro

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H01S5/02469 Primary

  Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

• H01S5/4031

  Edge-emitting structures · CPC title

• H01S5/02484

  Sapphire or diamond heat spreaders · CPC title