Display substrate and manufacturing method thereof, display apparatus

Patent metadata

Field	Value
Publication number	US-11018166-B2
Application number	US-201615521408-A
Country	US
Kind code	B2
Filing date	Feb 16, 2016
Priority date	Sep 9, 2015
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus, the manufacturing method comprises: forming a base; forming a thin film transistor on the base, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer; forming a third insulating layer above the thin film transistor; forming a pixel electrode above the third insulating layer; forming a fourth insulating layer above the pixel electrode, a material of at least one of the base, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer includes an organic material, and a material of at least one of them includes an inorganic material.

First claim

The invention claimed is:

1. A manufacturing method of a display substrate, comprising steps of:
forming a base;
forming a thin film transistor on the base,
wherein, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer;
forming a third insulating layer above the thin film transistor;
forming a pixel electrode above the third insulating layer;
forming a fourth insulating layer above the pixel electrode,
wherein a material of at least one of the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer includes an inorganic material, wherein the step of forming the base comprises:
forming first bulges corresponding to patterns of the source and the drain respectively on a base substrate;
forming a polydimethylsilane layer, which is hydroxyl-functionalized, on the base substrate, so that first grooves corresponding to patterns of the source and the drain are respectively formed at positions corresponding to the first bulges in a surface of the polydimethylsilane layer proximal to the base substrate;
after forming the first grooves in the polydimethylsilane layer, stripping off the polydimethylsilane layer from the base substrate to form the base.

2. The manufacturing method of claim 1 , wherein the step of forming the source and the drain comprises:
coating octadecyltrichlorosilane on a glass substrate;
contacting a surface of the glass substrate coated with the octadecyltrichlorosilane with a surface of the base formed with the first grooves;
removing the glass substrate, and coating hydrophilic solution containing conductive material on the base, so that the source and the drain are formed in the first grooves, respectively.

3. The manufacturing method of claim 1 , wherein the step of forming the fourth insulating layer comprises:
forming the fourth insulating layer on the pixel electrode by at least one material of polydimethylsilane, polyimide, polymethyl methacrylate and polyvinyl pyrrolidone.

4. A manufacturing method of a display substrate, comprising steps of:
forming a base;
forming a thin film transistor on the base,
wherein, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer;
forming a third insulating layer above the thin film transistor;
forming a pixel electrode above the third insulating layer;
forming a fourth insulating layer above the pixel electrode,
wherein the step of forming the thin film transistor comprises:
forming a polydimethylsilane layer on the base to form the first insulating layer;
irradiating light or performing an oxidation process on an upper surface of the first insulating layer so that a first silicon dioxide layer is formed on the upper surface of the first insulating layer;
etching the first silicon dioxide layer and the first insulating layer to form a via hole corresponding to a pattern of the active layer;
coating hydrophilic solution containing semi-conductive material on the first silicon dioxide layer to form the active layer in the via hole.

5. The manufacturing method of claim 4 , wherein the step of forming the fourth insulating layer comprises:
forming the fourth insulating layer on the pixel electrode by at least one material of polydimethylsilane, polyimide, polymethyl methacrylate and polyvinyl pyrrolidone.

6. A manufacturing method of a display substrate, comprising steps of:
forming a base;
forming a thin film transistor on the base,
wherein, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer;
forming a third insulating layer above the thin film transistor;
forming a pixel electrode above the third insulating layer;
forming a fourth insulating layer above the pixel electrode,
wherein a material of at least one of the base, the first insulating layer, the third insulating layer and the fourth insulating layer includes an inorganic material, wherein the step of forming the thin film transistor comprises:
forming a polydimethylsilane layer on the first insulating layer to form the second insulating layer;
etching the second insulating layer to form a second groove corresponding to a pattern of the gate;
coating octadecyltrichlorosilane on a glass substrate;
contacting a surface of the glass substrate coated with the octadecyltrichlorosilane with a surface of the second insulating layer formed with the second groove;
removing the glass substrate, and coating hydrophilic solution containing conductive material on the second insulating layer to form the gate in the second groove.

7. The manufacturing method of claim 6 , wherein the step of forming the fourth insulating layer comprises:
forming the fourth insulating layer on the pixel electrode by at least one material of polydimethylsilane, polyimide, polymethyl methacrylate and polyvinyl pyrrolidone.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Cheng Leilei
• Peng Rui
• Wang Dongfang

Classifications

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/411

  characterised by materials, geometry or structure of the substrates · CPC title

• H10D86/0212

  comprising manufacture, treatment or coating of substrates · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title