Imaging devices

Patent metadata

Field	Value
Publication number	US-11016202-B2
Application number	US-201815963377-A
Country	US
Kind code	B2
Filing date	Apr 26, 2018
Priority date	Apr 26, 2018
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

An imaging device includes: a first scintillator layer; an array of detector elements, wherein the array of detector elements comprises a first detector element; a second scintillator layer configured to receive radiation after the radiation has passed through the first scintillator layer and the array of detector elements, wherein the array of detector elements is located between the first scintillator layer and the second scintillator layer; a first electrode located closer to the first scintillator than the second scintillator; and a second electrode situated between the second scintillator and the first detector element; the first detector element configured to generate a first electrical signal in response to light from the first scintillator layer, and to generate a second electrical signal in response to light from the second scintillator layer; the second electrode configured to allow the light from the second scintillator layer to reach the first detector element.

First claim

The invention claimed is:

1. An imaging device, comprising:
a first scintillator layer;
an array of detector elements, wherein the array of detector elements comprises a first detector element;
a second scintillator layer configured to receive radiation after the radiation has passed through the first scintillator layer and the array of detector elements, wherein the array of detector elements is located between the first scintillator layer and the second scintillator layer;
a first electrode located closer to the first scintillator than the second scintillator; and
a second electrode situated between the second scintillator and the first detector element;
wherein the first detector element is configured to generate a first electrical signal in response to light from the first scintillator layer, and to generate a second electrical signal in response to light from the second scintillator layer;
wherein the second electrode is configured to allow the light from the second scintillator layer to reach the first detector element; and
wherein the second electrode is made from a non-transparent conductive material but is etched with a pattern to allow light to pass therethrough.

2. The imaging device of claim 1 , wherein the first electrode is situated between the first scintillator and the first detector element, and wherein the first electrode is configured to allow light from the first scintillator layer to reach the first detector element.

3. The imaging device of claim 1 , wherein the second electrode has a polygonal pattern.

4. The imaging device of claim 1 , wherein the first detector element has a first part configured to generate the first electrical signal in response to the light from the first scintillator layer, and a second part configured to generate the second electrical signal in response to the light from the second scintillator layer.

5. The imaging device of claim 4 , wherein the first part is a first side of the first detector element, and the second part is a second side of the first detector element, the second side being opposite from the first side.

6. The imaging device of claim 4 , wherein the first part comprises a first photodiode, and the second part comprises a second photodiode, and wherein the first photodiode and the second photodiode form a side-by-side configuration.

7. The imaging device of claim 1 , wherein the second electrode is at least partially transparent to visible light.

8. The imaging device of claim 1 , wherein the second electrode comprises a chrome layer.

9. The imaging device of claim 1 , wherein the second electrode comprises ITO or another transparent conductor.

10. The imaging device of claim 1 , wherein the first detector element comprises a hardware component, and wherein the second electrode and the hardware component are in a side-by-side configuration.

11. The imaging device of claim 10 , wherein the second electrode comprises a conductor extending along at least a part of a periphery of the second electrode, and one or more optical openings surrounded by the periphery.

12. The imaging device of claim 11 , wherein the second electrode further comprises one or more additional conductors extending within a space that is surrounded by the periphery of the second electrode.

13. The imaging device of claim 10 , wherein the hardware component comprises at least a part of a thin-film-transistor (TFT).

14. The imaging device of claim 1 , further comprising a substrate, wherein the array of detector elements is secured to the substrate, wherein the substrate has a first side and an opposite second side, the first side being closer to a radiation source than the second side.

15. The imaging device of claim 14 , wherein the array of detector elements is located closer to the first side of the substrate than the second side, or vice versa.

16. The imaging device of claim 14 , wherein a first part of the first detector element is located closer to the first side of the substrate than the second side.

17. The imaging device of claim 14 , wherein the substrate has a thickness that is less than 2 mm.

18. The imaging device of claim 1 , further comprising a layer of focusing elements located between (1) the array of detector elements and (2) the first scintillator layer or the second scintillator layer.

19. The imaging device of claim 1 , wherein the first scintillator layer is non-pixelated, the second scintillator layer is non-pixelated, or both the first and second scintillator layers are non-pixelated.

20. The imaging device of claim 1 , wherein one or both of the first and second scintillator layers are pixelated.

21. The imaging device of claim 1 , further comprising an optical grid coupled to the first scintillator layer or the second scintillator layer.

22. The imaging device of claim 1 , further comprising a first optical grid coupled to the first scintillator layer, and a second optical grid coupled to the second scintillator layer.

23. The imaging device of claim 1 , further comprising a first plate coupled to the first scintillator layer, and a second plate coupled to the second scintillator layer, wherein both the first scintillator layer and the second scintillator layer are between the first and second plates.

24. The imaging device of claim 1 , further comprising a first neutral density filter located between the first scintillator layer and the first detector element and/or a second neutral density filter located between the second scintillator layer and the first detector element.

25. The imaging device of claim 24 , wherein the first neutral density filter and/or the second neutral density filter is configured to improve a signal-to-noise ratio of the imaging device.

26. The imaging device of claim 1 , wherein a signal-to noise ratio of the imaging device is based on (1) respective quantum efficiencies (QE1,QE2) of the first and second scintillator layers, (2) respective detective quantum efficiencies (DQE1,DQE2) of the first and second scintillator layers, (3) respective optical yields (α1, α2) of the first and second scintillator layers, (4) optical sensitivities (p1, p2) of the first detector element associated with the first and second scintillators respectively, or (5) a combination of any of the foregoing.

27. The imaging device of claim 1 , wherein the first electrical signal has a first feature value (e1), and the second electrical signal has a second feature value (e2); and
wherein min (e1, e2)/max (e1, e2) is larger than a threshold.

28. The imaging device of claim 27 , wherein the first feature value (e1) is a function of quantum efficiency QE1 of the first scintillator layer, optical yield α1 of the first scintillator layer, and optical sensitivity p1 of the first detector element associated with the first scintillator layer; and
wherein the second feature value (e2) is a function of quantum efficiency QE2 of the second scintillator layer, optical yield α2 of the second scintillator layer, and optical sensitivity p2 of the first detector element associated with the second scintillator layer.

29. The imaging device of claim 27 , wherein the first feature value (e1) is a function of detective quantum efficiency DQE1 of the first scintillator layer, optical yield α1 of the first scintillator layer, and optical sensitivity p1 of the first detector element associated with th

Assignees

• Varian Med Sys Inc

Inventors

• Morf Daniel
• Star-Lack Josh

Classifications

• H10F77/247

  comprising indium tin oxide [ITO] · CPC title

• H10F39/1898 Primary

  Indirect radiation image sensors, e.g. using luminescent members · CPC title

• G01T1/20181

  Stacked detectors, e.g. for measuring energy and positional information (using a combination of different types of scintillation detectors, e.g. phoswich detectors, G01T1/2008) · CPC title

• G01T1/241

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• G01T1/2006 Primary

  using a combination of a scintillator and photodetector which measures the means radiation intensity · CPC title