Semiconductor laser diode

Patent metadata

Field	Value
Publication number	US-11011887-B2
Application number	US-201716471330-A
Country	US
Kind code	B2
Filing date	Dec 21, 2017
Priority date	Dec 29, 2016
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

First claim

The invention claimed is:

1. A semiconductor laser diode comprising:
a semiconductor layer sequence comprising an active layer having a main extension plane, wherein the active layer is configured to generate light in an active region during operation and to radiate the light via a light-outcoupling surface, and wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane; and
a continuous contact structure directly disposed on a surface region of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region,
wherein the first and second contact regions adjoin one another,
wherein the first contact material and the second contact material form a continuous contact layer on which a bonding layer is located and/or one of the materials of the first contact material or the second contact material is part of a bonding layer covering the other of the materials of the first contact material or the second contact material, and
wherein the first contact material and/or the second contact material is/are partially covered with a passivation material on a side facing away from the semiconductor layer sequence.

2. The semiconductor laser diode according to claim 1 , wherein the first electrical contact material has a first electrical contact resistance to the surface region and the second electrical contact material has a second electrical contact resistance to the surface region, and wherein the first and second contact resistances are different from each other.

3. The semiconductor laser diode according to claim 1 , wherein the first electrical contact material has a first electrical conductivity and the second electrical contact material has a second electrical conductivity, and wherein the first and second electrical conductivities are different from each other.

4. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence is deposited on a substrate and the surface region is formed by at least a part of a surface of the semiconductor layer sequence facing away from the substrate.

5. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence comprises a ridge waveguide structure having a ridge top side and ridge side faces adjacent thereto, and wherein the surface region is formed by the ridge top side.

6. The semiconductor laser diode according to claim 1 , wherein the surface region is formed by a semiconductor contact layer of the semiconductor layer sequence.

7. The semiconductor laser diode according to claim 6 , wherein the semiconductor contact layer has a first conductivity in the first contact region and a second conductivity in the second contact region.

8. The semiconductor laser diode according to claim 6 , wherein the semiconductor contact layer has a regionally modified material structure.

9. The semiconductor laser diode according to claim 1 , wherein the first contact region and/or the second contact region is/are formed as a strip.

10. The semiconductor laser diode according to claim 9 , wherein the strip has a main extension direction in the longitudinal direction.

11. The semiconductor laser diode according to claim 9 , wherein the strip has a varying width.

12. The semiconductor laser diode according to claim 1 , wherein the second contact region encloses the first contact region.

13. The semiconductor laser diode according to claim 1 , wherein the first contact region is island-shaped.

14. The semiconductor laser diode according to claim 1 , wherein the contact structure electrically contacts the surface region in a plurality of first contact regions and/or second contact regions.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Gerhard Sven
• Eichler Christoph
• Lell Alfred
• Stojetz Bernhard

Classifications

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title

• H01S5/2222

  having special electric properties · CPC title

• H01S5/22 Primary

  having a ridge or stripe structure · CPC title

• H01S5/2036

  Broad area lasers · CPC title