Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

Patent metadata

Field	Value
Publication number	US-11011674-B2
Application number	US-201916711721-A
Country	US
Kind code	B2
Filing date	Dec 12, 2019
Priority date	Jul 25, 2017
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

First claim

What is claimed is:

1. A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures, said multi-layered tunnel junction structure comprising:
an n-type doped insulation layer;
an n-type heavily doped layer disposed on said n-type doped insulation layer and higher in doping concentration than said n-type doped insulation layer;
a metal atom layer disposed on said n-type heavily doped layer opposite to said n-type doped insulation layer;
a p-type heavily doped layer disposed on said metal atom layer opposite to said n-type heavily doped layer; and
a p-type doped insulation layer disposed on said p-type heavily doped layer opposite to said metal atom layer, said p-type heavily doped layer being higher in doping concentration than said p-type doped insulation layer,
wherein each of said n-type doped insulation layer and said p-type doped insulation layer having a doping concentration ranging from 5×10 17 cm −3 to 5×10 18 cm −3 .

2. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said p-type heavily doped layer has a first band gap larger than band gaps of the light emitting structures, said n-type heavily doped layer having a second band gap larger than the band gaps of the light emitting structures, said p-type doped insulation layer having a third band gap larger than said first band gap, said n-type doped insulation layer having a fourth band gap larger than said second band gap.

3. The multi-layered tunnel junction structure as claimed in claim 1 , wherein each of said n-type heavily doped layer and said p-type heavily doped layer has a doping concentration larger than 1×10 19 cm −3 .

4. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said p-type heavily doped layer has a thickness ranging from 5 nm to 20 nm and a doping concentration larger than 1×10 20 cm −3 .

5. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said n-type heavily doped layer has a thickness ranging from 5 nm to 20 nm and a doping concentration larger than 2×10 19 cm −3 .

6. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said p-type doped insulation layer has a doping concentration ranging from 8×10 17 cm −3 to 5×10 18 cm −3 .

7. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said n-type doped insulation layer has a doping concentration ranging from 8×10 17 cm −3 to 5×10 18 cm −3 .

8. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said n-type doped insulation layer and said p-type doped insulation layer are configured to be barrier layers for respectively preventing impurities in said n-type heavily doped layer and said p-type heavily doped layer from diffusion and recombination.

9. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said metal atom layer contains metal atoms obtainable through thermal decomposition.

10. The multi-layered tunnel junction structure as claimed in claim 1 , wherein said metal atom layer is a combination of a monolayer of metal atoms and a bilayer of metal atoms, said metal atom layer having lattice strain.

11. The multi-layered tunnel junction structure as claimed in claim 9 , wherein the metal atoms are selected from the group consisting of Ga, In, Al, Sb, and combinations thereof.

12. A light emitting device comprising:
a first light emitting structure including a first n-type layer, a first active layer disposed on said first n-type layer, and a first p-type layer disposed on said first active layer opposite to said first n-type layer;
a second light emitting structure including a second n-type layer, a second active layer disposed on said second n-type layer, and a second p-type layer disposed on said second active layer opposite to said second n-type layer; and
a multi-layered tunnel junction structure as claimed in claim 1 , said multi-layered tunnel junction structure being disposed between said first light emitting structure and said second light emitting structure, an n-type doped insulation layer of said multi-layered tunnel junction structure being disposed adjacent to said first p-type layer of said first light emitting structure, a p-type doped insulation layer of said multi-layered tunnel junction structure being disposed adjacent to said second n-type layer of said second light emitting structure.

13. The light emitting device as claimed in claim 12 , further comprising a substrate on which said first light emitting structure is formed.

14. A method for producing a light emitting device, comprising:
forming a first light emitting structure, the first light emitting structure including a first n-type layer, a first active layer disposed on the first n-type layer, and a first p-type layer disposed on the first active layer opposite to the first n-type layer;
forming a multi-layered tunnel junction structure as claimed in claim 1 on the first light emitting structure; and
forming a second light emitting structure on the multi-layered tunnel junction structure opposite to the first light emitting structure, the second light emitting structure including a second n-type layer, a second active layer disposed on the second n-type layer, and a second p-type layer disposed on the second active layer opposite to said second n-type layer,
wherein an n-type doped insulation layer of the multi-layered tunnel junction structure is disposed adjacent to the first p-type layer of the first light emitting structure, a p-type doped insulation layer of the multi-layered tunnel junction structure being disposed adjacent to the second n-type layer of the second light emitting structure.

15. The method as claimed in claim 14 , wherein the first light emitting structure is formed on a substrate.

16. The method as claimed in claim 14 , wherein the metal atom layer contains metal atoms obtainable through thermal decomposition.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Bi Jingfeng
• Wu Chaoyu
• Wang Duxiang
• Li Senlin
• Wu Chun-Yi
• Lien Shih-Yi

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/813 Primary

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/013

  having light-emitting regions comprising only Group III-V materials · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title