High work function MoO2 back contacts for improved solar cell performance

US11011661B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11011661-B2
Application numberUS-202016741577-A
CountryUS
Kind codeB2
Filing dateJan 13, 2020
Priority dateFeb 6, 2017
Publication dateMay 18, 2021
Grant dateMay 18, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

First claim

Opening claim text (preview).

What is claimed is: 1. A solar cell comprising: a back contact; a high work function material disposed on the back contact; an absorber disposed on the high work function material, wherein the back contact and the high work function material are located to one side of the absorber, leaving a portion of a back side surface of the absorber uncovered by the back contact and the high work function material; a buffer layer disposed on the absorber; a transparent front contact disposed on the buffer layer; and a metal grid disposed on the transparent front contact. 2. The solar cell of claim 1 , further comprising: a via in the solar cell that extends down to the high work function material. 3. The solar cell of claim 2 , further comprising: a through contact in the via, wherein a portion of the through contact is exposed at the back side surface of the absorber. 4. The solar cell of claim 3 , wherein the through contact comprises a metal selected from the group consisting of: nickel and aluminum. 5. The solar cell of claim 3 , further comprising: a contact pad connecting the through contact to the metal grid, wherein the contact pad and the metal grid are both present on a same side of the transparent front contact. 6. The solar cell of claim 1 , wherein the absorber comprises copper, zinc, tin, and at least one of sulfur and selenium. 7. The solar cell of claim 1 , wherein the absorber has a thickness of from about 0.5 μm to about 2 μm, and ranges therebetween. 8. The solar cell of claim 1 , wherein the high work function material comprises molybdenum dioxide. 9. The solar cell of claim 1 , wherein the back contact comprises a metal selected from the group consisting of: gold, platinum, silver, and combinations thereof. 10. The solar cell of claim 1 , wherein the buffer layer comprises a material selected from the group consisting of: cadmium sulfide, a cadmium-zinc-sulfur material of formula Cd 1-x Zn x S wherein 0<x≤1, indium sulfide, zinc oxide, zinc oxysulfide, aluminum oxide, and combinations thereof. 11. The solar cell of claim 1 , wherein the transparent front contact comprises a material selected from the group consisting of: indium-tin-oxide, aluminum-doped zinc oxide, and combinations thereof. 12. The solar cell of claim 1 , wherein the metal grid comprises a material selected from the group consisting of: nickel, aluminum, and combinations thereof. 13. A solar cell comprising: a back contact; a high work function material comprising molybdenum dioxide disposed on the back contact; an absorber comprising copper, zinc, tin, and at least one of sulfur and selenium disposed on the high work function material, wherein the back contact and the high work function material are located to one side of the absorber, leaving a portion of a back side surface of the absorber uncovered by the back contact and the high work function material; a buffer layer disposed on the absorber; a transparent front contact disposed on the buffer layer; and a metal grid disposed on the transparent front contact. 14. The solar cell of claim 13 , further comprising: a via in the solar cell that extends down to the high work function material. 15. The solar cell of claim 14 , further comprising: a through contact in the via, wherein a portion of the through contact is exposed at the back side surface of the absorber. 16. The solar cell of claim 15 , wherein the through contact comprises a metal selected from the group consisting of: nickel and aluminum. 17. The solar cell of claim 15 , further comprising: a contact pad connecting the through contact to the metal grid, wherein the contact pad and the metal grid are both present on a same side of the transparent front contact. 18. The solar cell of claim 13 , wherein the absorber has a thickness of from about 0.5 μm to about 2 μm, and ranges therebetween. 19. The solar cell of claim 13 , wherein the back contact comprises a metal selected from the group consisting of: gold, platinum, silver, and combinations thereof. 20. The solar cell of claim 13 , wherein the buffer layer comprises a material selected from the group consisting of: cadmium sulfide, a cadmium-zinc-sulfur material of formula Cd 1-x Zn x S wherein 0<x≤1, indium sulfide, zinc oxide, zinc oxysulfide, aluminum oxide, and combinations thereof.

Assignees

Inventors

Classifications

  • for metallisation wrap-through [MWT] photovoltaic cells · CPC title

  • for photovoltaic cells · CPC title

  • comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4 · CPC title

  • using temporary substrates · CPC title

  • H10F10/16Primary

    Photovoltaic cells having only PN heterojunction potential barriers · CPC title

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What does patent US11011661B2 cover?
Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a m…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10F10/16. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 18 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).