Magnetoresistive sensors and methods for generating closed flux magnetization patterns

Patent metadata

Field	Value
Publication number	US-11009568-B2
Application number	US-201816001060-A
Country	US
Kind code	B2
Filing date	Jun 6, 2018
Priority date	Jun 7, 2017
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A magnetoresistive sensor includes a magnetic reference layer. The magnetic reference layer includes a permanent closed flux magnetization pattern of a predetermined rotational direction. Furthermore, the magnetoresistive sensor includes a magnetic free layer. The magnetic free layer has a total lateral area that is smaller than a total lateral area of the magnetic reference layer. A centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.

First claim

What is claimed is:

1. A magnetoresistive sensor, comprising:
a magnetic reference layer comprising a closed flux magnetization pattern of a predetermined rotational direction; and
a magnetic free layer having a total lateral area that is smaller than a total lateral area of the magnetic reference layer, wherein a centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.

2. The magnetoresistive sensor of claim 1 , wherein the magnetic reference layer comprises a main portion and a protrusion portion laterally adjacent to the main portion, wherein the main portion comprises the closed flux magnetization pattern, wherein a magnetization pattern of the protrusion portion is configured to determine the predetermined rotational direction of the closed flux magnetization pattern.

3. The magnetoresistive sensor of claim 2 , wherein, in proximity to a lateral joining of the protrusion portion and the main portion, the magnetization pattern of the protrusion portion is directed opposite to the closed flux magnetization pattern of the main portion.

4. The magnetoresistive sensor of claim 2 , wherein a length of the protrusion portion is larger than twice a width of the protrusion portion.

5. The magnetoresistive sensor of claim 2 , wherein the protrusion portion extends tangentially to the main portion.

6. The magnetoresistive sensor of claim 2 , wherein the main portion has a rotationally symmetric lateral cross section.

7. The magnetoresistive sensor of claim 2 , wherein a minimal lateral distance between the magnetic free layer and the protrusion portion is larger than 10% of a maximal lateral extension of the main portion.

8. The magnetoresistive sensor of claim 1 , wherein the closed flux magnetization pattern vertically above or below at least a part of the magnetic free layer has an average magnetic flux density component in parallel to the magnetic free layer that is different from zero, wherein the part of the magnetic free layer is laterally surrounded by electrically insulating material.

9. The magnetoresistive sensor of claim 1 , wherein a direction of the closed flux magnetization pattern vertically above or below at least a part of the magnetic free layer changes by at most 90°, wherein the part of the magnetic free layer is laterally surrounded by electrically insulating material.

10. The magnetoresistive sensor of claim 1 , further comprising:
a first magnetoresistor comprising a first magnetic free structure of the magnetic free layer; and
a second magnetoresistor comprising a second magnetic free structure of the magnetic free layer,
wherein the first magnetic free structure is defined and laterally enclosed by one or more first vertical sidewalls and the second magnetic free structure is defined and laterally enclosed by one or more second vertical sidewalls, wherein the second magnetic free structure is laterally separated and distinct from the first magnetic free structure.

11. The magnetoresistive sensor of claim 10 , wherein a first average direction of the closed flux magnetization pattern vertically above or below the first magnetic free structure of the magnetic free layer differs from a second average direction of the closed flux magnetization pattern vertically above or below the second magnetic free structure of the magnetic free layer.

12. The magnetoresistive sensor of claim 11 , wherein the first average direction differs from the second average direction by more than 5 degree.

13. The magnetoresistive sensor of claim 10 , wherein the magnetic reference layer comprises a first magnetic reference structure and a second magnetic reference structure laterally separated from the first magnetic reference structure, wherein each magnetic reference structure of the magnetic reference layer, including the first magnetic reference structure and the second magnetic reference structure, comprises a respective closed flux magnetization pattern of a predetermined rotational direction, wherein a vertical projection of the first magnetic reference structure of the magnetic free layer onto the magnetic reference layer is laterally surrounded by a perimeter of the first magnetic reference structure of the magnetic reference layer, wherein a vertical projection of the second magnetic reference structure of the magnetic free layer onto the magnetic reference layer is laterally surrounded by a perimeter of the second magnetic reference structure of the magnetic reference layer,
the first magnetic reference structure is defined and laterally enclosed by one or more third vertical sidewalls and the second magnetic reference structure is defined and laterally enclosed by one or more fourth vertical sidewalls, wherein the second magnetic reference structure is laterally separated and distinct from the first magnetic reference structure.

14. The magnetoresistive sensor of claim 10 , further comprising:
a bridge circuit, wherein the bridge circuit comprises the first magnetoresistor and the second magnetoresistor, wherein the first magnetoresistor comprises the first magnetic free structure of the magnetic free layer, wherein the second magnetoresistor comprises the second magnetic free structure of the magnetic free layer.

15. The magnetoresistive sensor of claim 1 , further comprising:
a tunnel barrier layer and an electrically conductive via, wherein the tunnel barrier layer is disposed between the magnetic reference layer and the magnetic free layer, wherein the electrically conductive via connects a part of the magnetic free layer with the magnetic reference layer through the tunnel barrier layer, wherein the part of the magnetic free layer is laterally surrounded by electrically insulating material.

16. The magnetoresistive sensor of claim 15 , wherein the electrically conductive via is located vertically above the centroid of the magnetic reference layer.

Assignees

• Infineon Technologies Ag

Inventors

• Hammerschmidt Dirk
• Satz Armin
• Zimmer Juergen

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H01F41/304

  using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title