Quantum dot, light emitting material and manufacturing method of quantum dot comprising thermal treatment of solution containing formed quantum dot

Patent metadata

Field	Value
Publication number	US-11008512-B2
Application number	US-201816166191-A
Country	US
Kind code	B2
Filing date	Oct 22, 2018
Priority date	Oct 24, 2017
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A quantum dot, a light emitting material, and a manufacturing method of quantum dot are provided. A ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×108 CPS/Abs. to 2.0×109 CPS/Abs. The characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot.

First claim

What is claimed is:

1. A manufacturing method of a quantum dot, comprising:
providing a first solution comprising a group 12 element, a group 13 element, or a group 14 element;
providing a second solution comprising a group 15 element or a group 16 element;
mixing the first solution with the second solution to form a third solution;
adding a material comprising the group 12 element, the group 13 element, or the group 14 element and a fourth solution comprising the group 15 element or the group 16 element to the third solution to form a fifth solution comprising the quantum dot; and
performing a thermal treatment to the fifth solution, wherein a temperature of the thermal treatment is higher than a temperature of forming the fifth solution comprising the quantum dot by 15° C. to 75° C., and a time period of the thermal treatment is 3 minutes to 7 minutes;
a ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×10 8 CPS/Abs. to 2.0×10 9 CPS/Abs. after the thermal treatment, and the characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot after the thermal treatment.

2. The manufacturing method of the quantum dot as claimed in claim 1 , wherein the temperature of the thermal treatment is higher than the temperature of forming the fifth solution comprising the quantum dot by 20° C. to 50° C.

3. The manufacturing method of the quantum dot as claimed in claim 1 , wherein a ratio of a diameter of the quantum dot after the thermal treatment to a diameter of the quantum dot before the thermal treatment ranges from 1.0 to 1.3.

4. The manufacturing method of the quantum dot as claimed in claim 3 , wherein the quantum dot comprises an inner core and an outer shell, and a ratio of a thickness of the outer shell after the thermal treatment to a thickness of the outer shell before the thermal treatment ranges from 1.0 to 1.6.

5. The manufacturing method of the quantum dot as claimed in claim 1 , wherein the ratio of the emission intensity to the absorption intensity of the quantum dot at the characteristic wavelength ranges from 2.0×10 8 CPS/Abs. to 1.0×10 9 CPS/Abs.

6. The manufacturing method of the quantum dot as claimed in claim 1 , wherein the ratio of the emission intensity to the absorption intensity of the quantum dot at the characteristic wavelength ranges from 2.0×10 8 CPS/Abs. to 6.0×10 8 CPS/Abs.

7. The manufacturing method of the quantum dot as claimed in claim 1 , wherein the temperature of forming the fifth solution comprising the quantum dot ranges from 220° C. to 260° C.

Assignees

• Chi Mei Corp

Inventors

• Lin Keng-Chu

Classifications

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• C09K11/025

  non-luminescent particle coatings or suspension media · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title