Polishing composition and polishing method using the same

Patent metadata

Field	Value
Publication number	US-11008482-B2
Application number	US-201816226666-A
Country	US
Kind code	B2
Filing date	Dec 20, 2018
Priority date	Nov 23, 2018
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential (ζ) is ≤−10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.

First claim

What is claimed is:

1. A polishing composition comprising: anion-modified silica polishing particles comprising a compound formed on a surface by hydrolysis of at least one compound selected from the group consisting of polycarbonate, polysulfide, polyepoxide, and polyketone,
a pH adjuster,
wherein the anion-modified silica polishing particles have the zeta potential (ζ) of ≤−10 mV,
wherein the polishing rate of an indium tin oxide (ITO) layer is from 2300 to 3700 Å/min,
wherein the pH of the polishing composition is 4 to 6,
wherein the anion-modified silica polishing particles are aluminum-modified silica polishing particles produced by mixing silica polishing particles with Al(OH)4 − ,
wherein Al(OH)4 − is mixed in an amount of 3% by weight based on the total weight of the aluminum-modified silica polishing particles, wherein the pH adjuster is included in an amount of 0.1 to 1% by weight based on the total weight of the polishing composition.

2. The polishing composition of claim 1 , wherein the anion-modified silica polishing particles are colloidal silica.

3. The polishing composition of claim 1 , wherein the anion-modified silica polishing particles have a zeta potential (ζ) of −25 mV to −10 mV.

4. A polishing method comprising:
applying the polishing composition of claim 1 to a polishing substrate.

5. The polishing method of claim 4 , wherein the application of the polishing composition to the polishing substrate is performed by at least one of a spray coating method, a spin coating method, a casting method, a tape casting method, a dip coating method, a bar coating method, a physical vapor deposition method, and a chemical vapor deposition method.

6. The polishing method of claim 4 , wherein the polishing substrate includes an indium-containing layer.

7. The polishing method of claim 6 , wherein the polishing substrate includes a layer containing an oxide of indium.

8. The polishing composition of claim 1 , wherein at least some of silicon atoms of the silica polishing particles of the anion-modified silica polishing particles are substituted with a substitution metal comprising aluminum.

9. The polishing composition of claim 8 , wherein the anion-modified silica polishing particles is produced by mixing the silica polishing particles with a precursor compound of the substitution metal.

10. The polishing composition of claim 9 , wherein the substitution metal is one or more selected from the group consisting of metal oxides, organic metals, and metal salts of the substitution metal.

11. The polishing composition of claim 9 , wherein the substitution metal is included in an amount of 0.001 to 10% by weight based on the total weight of the anion-modified silica polishing particles.

12. The polishing composition of claim 11 , wherein the substitution metal is included in an amount of 0.3 to 2.5% by weight based on the total weight of the anion-modified silica polishing particles.

Assignees

• Soulbrain Co Ltd

Inventors

• So Hye Kyung
• Han Myeong Hoon

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title