Micro-LED displays

Patent metadata

Field	Value
Publication number	US-11004894-B2
Application number	US-202016878130-A
Country	US
Kind code	B2
Filing date	May 19, 2020
Priority date	Sep 30, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

First claim

What is claimed is:

1. A micro-light emitting diode (LED) display comprising:
a backplane; and
at least one integrated LED structure supported by the backplane, the at least one integrated LED structure including at least two of:
a first micro-LED including a first plurality of nanowires, the first plurality of nanowires including indium, gallium, and nitrogen, the first micro-LED to emit a first color of light based on a first percentage of indium content in ones of the first plurality of nanowires;
a second micro-LED including a second plurality of nanowires, the second plurality of nanowires including indium, gallium, and nitrogen, the second micro-LED to emit a second color of light based on a second percentage of indium content in ones of the second plurality of nanowires, the second percentage of indium content greater than the first percentage of indium content; or
a third micro-LED including a third plurality of nanowires, the third plurality of nanowires including indium, gallium, and nitrogen, the third micro-LED to emit a third color of light based on a third percentage of indium content in ones of the third plurality of nanowires, the third percentage of indium content greater than the second percentage of indium content.

2. The micro-LED display of claim 1 , wherein the display is associated with at least one of a smartphone, a tablet, a notebook, a smartwatch, or a television.

3. The micro-LED display of claim 1 , wherein the backplane includes glass.

4. The micro-LED display of claim 1 , wherein the at least two of the first, second, or third micro-LEDs of the integrated LED structure is a monolithic structure from a single wafer different than the backplane.

5. The micro-LED display of claim 1 , wherein the first color of light is blue light, the second color of light is green light, and the third color of light is red light.

6. The micro-LED display of claim 5 , further including a fourth micro-LED including a fourth plurality of nanowires, the fourth micro-LED to emit yellow light based on a fourth percentage of indium content in ones of the fourth plurality of nanowires.

7. The micro-LED display of claim 6 , wherein the fourth percentage of indium content is within a range from 34% to 40% indium content.

8. The micro-LED display of claim 1 , wherein the first percentage of indium content is within a range from 18% to 24% indium content.

9. The micro-LED display of claim 1 , wherein the second percentage of indium content is within a range from 28% to 34% indium content.

10. The micro-LED display of claim 1 , wherein the third percentage of indium content is within a range from 38% to 44% indium content.

11. The micro-LED display of claim 1 , wherein the first plurality of nanowires have a first diameter, the second plurality of nanowires have a second diameter different than the first diameter, and the third plurality of nanowires have a third diameter different than the first diameter and different than the second diameter.

12. The micro-LED display of claim 11 , wherein the third diameter is greater than the second diameter and the second diameter is greater than the first diameter.

13. An electronic device comprising:
processor circuitry;
memory;
network interface circuitry; and
a display panel including a backplane and a monolithic LED structure supported by the backplane, the monolithic LED structure including at least two of:
a first micro-LED including a first plurality of nanowires, the first plurality of nanowires including indium, gallium, and nitrogen, the first micro-LED to emit a first color of light based on a first percentage of indium content in ones of the first plurality of nanowires;
a second micro-LED including a second plurality of nanowires, the second plurality of nanowires including indium, gallium, and nitrogen, the second micro-LED to emit a second color of light based on a second percentage of indium content in ones of the second plurality of nanowires, the second percentage of indium content greater than the first percentage of indium content; or
a third micro-LED including a third plurality of nanowires, the third plurality of nanowires including indium, gallium, and nitrogen, the third micro-LED to emit a third color of light based on a third percentage of indium content in ones of the third plurality of nanowires, the third percentage of indium content greater than the second percentage of indium content.

14. The electronic device of claim 13 , wherein the electronic device corresponds to a smartphone, a tablet, a notebook, a smartwatch, or a television.

15. The electronic device of claim 13 , wherein the backplane includes glass.

16. The electronic device of claim 13 , wherein the monolithic LED structure is from a single wafer different than the backplane.

17. The electronic device of claim 13 , wherein the first color of light is blue, the second color of light is green, and the third color of light is red.

18. The electronic device of claim 17 , further including a fourth micro-LED including a fourth plurality of nanowires, the fourth micro-LED to emit yellow light based on a fourth percentage of indium content in ones of the fourth plurality of nanowires.

19. The electronic device of claim 18 , wherein the fourth percentage of indium content is within a range from 34% to 40% indium content.

20. The electronic device of claim 13 , wherein the first percentage of indium content is within a range from 18% to 24% indium content.

21. The electronic device of claim 13 , wherein the second percentage of indium content is within a range from 28% to 34% indium content.

22. The electronic device of claim 13 , wherein the third percentage of indium content is within a range from 38% to 44% indium content.

23. The electronic device of claim 13 , wherein the first plurality of nanowires have a first diameter, the second plurality of nanowires have a second diameter different than the first diameter, and the third plurality of nanowires have a third diameter different than the first diameter and different than the second diameter.

24. The electronic device of claim 23 , wherein the third diameter is greater than the second diameter and the second diameter is greater than the first diameter.

25. The electronic device of claim 13 , further including a battery.

Assignees

• Intel Corp

Inventors

• Ahmed Khaled
• Parikh Kunjal
• Chang Peter L

Classifications

• H10H20/818

  within the light-emitting regions · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10H29/142 Primary

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H01L33/0095

  Electricity · mapped topic