Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-11004665-B2
Application number	US-201815941817-A
Country	US
Kind code	B2
Filing date	Mar 30, 2018
Priority date	Mar 31, 2017
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A plasma processing apparatus includes a vacuum container, a conveyance unit including a rotator and circulating and carrying a workpiece through the conveyance path, a cylindrical member having an opening at one end extended in the direction toward the conveyance path, a window member provided at the cylindrical member, and dividing a gas space from the exterior thereof, a supply unit supplying the process gas in the gas space, and an antenna generating inductive coupling plasma on the workpiece. The supply unit supplies the process gas from plural locations where a passing time at which the surface of the rotator passes through a process region is different, and the plasma processing apparatus further includes an adjusting unit individually adjusting the supply amounts of the process gas from the plural locations of the supply unit per a unit time in accordance with the passing time.

First claim

What is claimed is:

1. A plasma processing apparatus comprising:
a vacuum container capable of achieving a vacuumed interior;
a conveyance unit that comprises a rotator having a surface that holds a workpiece and a rotation axis, and circulates and carries the workpiece along a circular conveyance path;
a cylindrical member having an opening at one end extended in a direction toward the circular conveyance path in the vacuum container;
a window member provided at the cylindrical member, and dividing a gas space between an interior of the cylindrical member and the rotator from an exterior;
a supply unit supplying the process gas in the gas space; and
an antenna installed facing the window member and outside the gas space, and causing the process gas in the gas space to generate inductive coupling plasma for plasma processing on the workpiece passing through the circular conveyance path when power is applied,
wherein:
the rotation axis extends in a direction intersecting the surface;
the window member comprises a surface facing the surface of the rotator;
the supply unit comprises a plurality of supply ports supplying the process gas in the gas space and an adjusting unit individually adjusting supply amounts of the process gas from the plurality of supply ports;
the plurality of supply ports is provided between the surface of the window member and the surface of the rotator and along a direction intersecting the circular conveyance path; and
the adjusting unit adjusts the supply amount of the process gas introduced from each of the supply ports in accordance with a position in a direction that intersects the circular conveyance path.

2. The plasma processing apparatus according to claim 1 , further comprising a dispersing plate installed at a location that faces the supply port with a clearance therefrom, dispersing the process gas supplied from the supply port, and causing the dispersed process gas to flow into the gas space.

3. The plasma processing apparatus according to claim 2 , wherein a flow channel of the process gas between the dispersing plate and the supply port is blocked at a rotator side, but is in connected with the gas space at a window-member side.

4. The plasma processing apparatus according to claim 1 , wherein the adjusting unit adjusts the supply amount of the process gas introduced from each of the supply ports per a unit time so as to increase from the inner circumference side of the rotator toward the outer circumference side of the rotator in a direction that intersects the circular conveyance path.

5. The plasma processing apparatus according to claim 1 , further comprising a film formation unit provided at a location facing the workpiece circulated and carried along the circular conveyance path, and depositing a film formation material on the workpiece by sputtering to form a film,
wherein the plasma processing by inductive coupling plasma is performed on a film of the film formation material deposited on the workpiece by the film formation unit.

6. The plasma processing apparatus according to claim 5 , wherein:
the supply ports are provided in a film formation region that corresponds to a region where the film formation unit forms the film, and is an annular region along the circular conveyance path, and are also provided in an area between the film formation region and the inner wall of the chamber; and
the supply port provided in the area between the film formation region and the inner wall of the chamber is not subjected to the adjustment of the supply amount of the process gas by the adjusting unit.

7. The plasma processing apparatus according to claim 5 , wherein the supply ports are provided at locations facing with each other across the gas space, and in a direction along the circular conveyance path.

8. The plasma processing apparatus according to claim 5 , wherein the adjusting unit adjusts the supply amount of the process gas introduced from each of the supply ports in accordance with a film thickness to be formed on the workpiece and the passing time.

9. The plasma processing apparatus according to claim 3 , further comprising a film formation unit provided at a location facing the workpiece circulated and carried along the circular conveyance path, and depositing a film formation material on the workpiece by sputtering to form a film,
wherein the plasma processing by inductive coupling plasma is performed on a film of the film formation material deposited on the workpiece by the film formation unit.

10. The plasma processing apparatus according to claim 9 , wherein:
the supply ports are provided in a film formation region that corresponds to a region where the film formation unit forms the film, and is an annular region along the circular conveyance path, and are also provided in an area between the film formation region and the inner wall of the chamber; and
the supply port provided in the area between the film formation region and the inner wall of the chamber is not subjected to the adjustment of the supply amount of the process gas by the adjusting unit.

11. The plasma processing apparatus according to claim 9 , wherein the supply ports are provided at locations facing with each other across the gas space, and in a direction along the circular conveyance path.

12. The plasma processing apparatus according to claim 11 , wherein the adjusting unit adjusts the supply amount of the process gas introduced from each of the supply ports in accordance with a film thickness to be formed on the workpiece and the passing time.

13. The plasma processing apparatus according to claim 10 , wherein the supply ports are provided at locations facing with each other across the gas space, and in a direction along the circular conveyance path.

14. The plasma processing apparatus according to claim 13 , wherein the adjusting unit adjusts the supply amount of the process gas introduced from each of the supply ports in accordance with a film thickness to be formed on the workpiece and the passing time.

15. A plasma processing apparatus comprising:
a vacuum container capable of achieving a vacuumed interior;
a conveyance unit that comprises a rotator having a surface that holds a workpiece and a rotation axis, and circulates and carries the workpiece along a circular conveyance path;
a cylindrical member having an opening at one end extended in a direction toward the circular conveyance path in the vacuum container;
a window member provided at the cylindrical member, and dividing a gas space between an interior of the cylindrical member and the rotator from an exterior;
a supply unit supplying the process gas in the gas space; and
an antenna installed facing the window member and outside the gas space, and causing the process gas in the gas space to generate inductive coupling plasma for plasma processing on the workpiece passing through the circular conveyance path when power is applied, wherein:
the rotation axis extends in a direction intersecting the surface;
the window member comprises a surface facing the surface of the rotator;
the supply unit comprises a plurality of supply ports supplying the process gas in the gas space and an adjusting unit individually adjusting supply amounts of the process gas from the plurality of supply ports;
the plurality of supply ports is provided between the surface of the window member and the surface of the rotator and along a direction intersecting the circular conveyance path;
the plasma processing by inductive coupling plasma is performed on a film of a film formation material deposited on the workpiece by a film formation un

Assignees

• Shibaura Mechatronics Corp

Inventors

• Kawamata Yoshio
• Ono Daisuke

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title