Method for making semimetal compound of Pt

Patent metadata

Field	Value
Publication number	US-11001937-B2
Application number	US-201916274445-A
Country	US
Kind code	B2
Filing date	Feb 13, 2019
Priority date	Sep 28, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour and keeping for 24 hours to 100 hours to obtain a crystal material of PtSe2; and separating the excessive reacting materials from the crystal material of PtSe2.

First claim

What is claimed is:

1. A method for making semimetal compound of Pt, the method comprising:
placing Pt and Se in a reacting chamber as reacting materials, wherein a first purity of the Pt is greater than 99.9%, and a second purity of the Se is greater than 99.99%;
evacuating the reacting chamber to a vacuum level of a pressure lower than 10 Pa;
heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and maintaining the reacting chamber at the first temperature for a first time period of 24 hours to 100 hours;
cooling the reacting chamber to a second temperature of 400 degrees Celsius to about 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour;
maintaining the reacting chamber at the second temperature for a second time period of 24 hours to 100 hours to obtain a reaction product comprising a crystal material of PtSe 2 ; and
separating the crystal material of PtSe 2 from the reaction product.

2. The method of claim 1 , wherein a molar ratio of Pt element and Se element is from 2:80 to 2:120.

3. The method of claim 2 , wherein the molar ratio of Pt element and Se element is 2:98.

4. The method of claim 1 , wherein the reacting chamber is evacuated to lower than 1 Pa.

5. The method of claim 1 , wherein the separating the crystal material of PtSe 2 from the reaction product further comprises centrifuging the reaction product.

6. The method of claim 5 , wherein a third time period of the centrifuging the reaction product is in a range from 1 minute to 5 minutes.

7. The method of claim 5 , wherein a speed of the centrifuging the reaction product is in a range of 2000 revolutions per minute (rpm) to 3000 rpm.

8. A method for making semimetal compound of Pt, the method comprising:
placing Pt and Se in a reacting chamber as reacting materials, wherein a first purity of the Pt is greater than 99.9%, and a second purity of the Se is greater than 99.99%;
evacuating the reacting chamber to a vacuum level of a pressure lower than 10 Pa;
heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and maintaining the reacting chamber at the first temperature for a first time period of 24 hours to 100 hours;
cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour; and
maintaining the reacting chamber at the second temperature for a second time period of 24 hours to 100 hours to obtain a reaction product comprising a crystal material of PtSe 2 .

9. The method of claim 8 , wherein a molar ratio of Pt element and Se element is from 2:80 to 2:120.

10. The method of claim 9 , wherein the molar ratio of Pt element and Se element is 2:98.

11. The method of claim 8 , wherein the reacting chamber is evacuated to lower than 1 Pa.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhang Ke-Nan
• Yan Ming-Zhe
• Zhou shu-yun
• Wu Yang
• Fan Shou-Shan

Classifications

• C01B19/007 Primary

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

• C30B23/00

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C30B29/46 Primary

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C01P2002/82

  by IR- or Raman-data · CPC title

• C30B9/08

  using other solvents · CPC title