Ring oscillator temperature sensor

Patent metadata

Field	Value
Publication number	US-10998889-B2
Application number	US-201715851755-A
Country	US
Kind code	B2
Filing date	Dec 22, 2017
Priority date	Dec 22, 2017
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

A sensor circuit includes at least one ring oscillator having a supply port supplied by at least one current source and a reference frequency. A comparator compares a frequency output of the at least one ring oscillator with the reference frequency to yield a measurement, such as a temperature measurement.

First claim

The invention claimed is:

1. A sensor circuit comprising:
a first ring oscillator and a second ring oscillator, and a feedback loop coupled to said first and second ring oscillators such that currents in said first and second ring oscillators are equal or scaled and are determined by said feedback loop, wherein said first and second ring oscillators operate in a subthreshold region.

2. The sensor circuit according to claim 1 , wherein at least one of said ring oscillators has a supply port supplied by at least one current source.

3. The sensor circuit according to claim 2 , comprising a comparator configured to compare a frequency output of said at least one of said ring oscillators with a reference frequency to yield a measurement.

4. The sensor circuit according to claim 3 , wherein the measurement is a temperature measurement.

5. The sensor circuit according to claim 1 , wherein the first ring oscillator is coupled to a resistor at its positive supply port.

6. The sensor circuit according to claim 5 , where said first ring oscillator is coupled at its positive supply port to a first node and the first node is coupled to a port of a resistor, whose second port is coupled to a second node, said second ring oscillator is coupled at its positive supply port to a third node, and said at least one current source comprises a first current source that supplies current to the second node and a second current source that supplies current to the third node.

7. The sensor circuit according to claim 6 , wherein the first and second current sources are PMOS transistors, whose sources are both coupled to a positive supply voltage, Vdd and whose drains are coupled to the second node and third node, respectively, and gate voltages of the PMOS transistors are coupled to a fourth node, and an amplifier has inputs coupled with the second and third node and an output coupled with the fourth node.

8. The sensor circuit according to claim 2 , wherein at least one frequency output of said at least one ring oscillator is input to a level shifter.

9. The sensor circuit according to claim 7 , wherein an input node of the sensor circuit is initialized at a predetermined value in order to control start-up currents in the first and second current sources.

10. The sensor circuit according to claim 9 , wherein said predetermined value is applied to the fourth node of the circuit and is determined by diode coupled devices.

11. A sensor circuit comprising a first ring oscillator and a second ring oscillator wherein a current density of said second ring oscillator is a scaled multiple of a current density of said first ring oscillator, and wherein said first and second ring oscillators operate in a subthreshold region, and wherein said first and second ring oscillators operate in a subthreshold region.

12. The sensor circuit according to claim 11 , wherein currents in said first and second ring oscillators are functions of temperature such that the sensor circuit functions as a temperature sensor.

13. The sensor circuit according to claim 11 , wherein scaling of currents of said first and second ring oscillators is done with a feedback circuit coupled to said first and second ring oscillators.

14. The sensor circuit according to claim 11 , wherein a positive supply of said first ring oscillator is coupled to a first node and a positive supply of said second ring oscillator is coupled to a third node and a resistive element is coupled between the third node and a second node, and a feedback circuit equalizes voltages between the first and second nodes.

15. The sensor circuit according to claim 14 , wherein the first node is coupled to a first input of a differential amplifier and the second node is coupled to a second input of the differential amplifier and an output of the differential amplifier is coupled to a node PG, which is coupled to a gate of a first PMOS and to a gate of a second PMOS, wherein a drain of the first PMOS is coupled to the first node and the drain of the second PMOS is coupled to the second node.

Assignees

• Univ Bar Ilan
• Birad Res & Development Company Ltd

Inventors

• Shor Joseph
• Vinshtok-Melnik Natan

Classifications

• G01R31/2644

  Adaptations of individual semiconductor devices to facilitate the testing thereof · CPC title

• G01R19/0084

  Measuring voltage only · CPC title

• G01K7/00

  Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat (giving results other than momentary value of temperature G01K3/00) {; Power supply therefor, e.g. using thermoelectric elements} · CPC title

• G01K7/01

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• H03M1/1019

  by storing a corrected or correction value in a digital look-up table · CPC title