Magnetostrictive stack and corresponding bit-cell

Patent metadata

Field	Value
Publication number	US-10998495-B2
Application number	US-201616329721-A
Country	US
Kind code	B2
Filing date	Sep 30, 2016
Priority date	Sep 30, 2016
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

First claim

We claim:

1. An apparatus comprising:
a ferromagnetic (FM) region with magnetostrictive (MS) property;
a first piezo-electric (PZe) region directly adjacent to a first side of the FM region;
a second PZe region directly adjacent to a second side of the FM region, wherein the second side is opposite of the first side; and
a magnetoelectric region adjacent to the FM region, the first PZe region and the second PZe region,
wherein the first and second PZe regions have a length in a first direction substantially same as a length of the FM region in the first direction.

2. The apparatus of claim 1 , wherein the FM region comprises a material including one of: Terfenol-D (Tb x Dy 1-x Fe 2 ); Fe 1-x Ga x ; CoFe; Co; CoFe 2 O 4 ; CoFeO 3 ; CoPd; CoFeB; NiFe 2 O 4 ; or FeRh.

3. The apparatus of claim 1 , wherein the magnetoelectric region comprises a material including one of: BiFeO 3 or Cr 2 O 3 .

4. The apparatus of claim 1 , wherein the first or second PZe region comprises a material including one of: Pb(Zr 0.2 Ti 0.8 )O 3 ; PbTiO 3 ; BaTiO 3 ; BiFeO 3 ; Bi 4 Ti 3 O 12 ; Polyvinylidene fluoride; PZT; or PMNPT.

5. The apparatus of claim 1 comprises a first metal layer adjacent to the magnetoelectric region.

6. The apparatus of claim 5 comprises a second metal layer adjacent to the FM region, the first PZe region, and the second PZe region.

7. The apparatus of claim 6 comprises a voltage source coupled to the first and second metal layers.

8. The apparatus of claim 5 comprises a first transistor coupled to the first metal layer, wherein the first transistor has a gate terminal controllable by a write wordline (WL write ).

9. An apparatus comprising:
a ferromagnetic (FM) region with magnetostrictive (MS) property;
a first piezo-electric (PZe) region adjacent to the FM region;
a second PZe region adjacent to the FM region such that the FM region is between the first PZe region and the second PZe region;
a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region, wherein the first PZe region is at least partially adjacent to the magnetoelectric region, and wherein the second PZe region is at least partially adjacent to the magnetoelectric region, wherein the magnetoelectric region is on top or on bottom of the FM region, the first PZe region and the second PZe region.

10. The apparatus of claim 9 , wherein the FM region comprises a material including one of: Terfenol-D (Tb x Dy 1-x Fe 2 ); Fe 1-x Ga x ; CoFe; Co; CoFe 2 O 4 ; CoFeO 3 ; CoPd; CoFeB; NiFe 2 O 4 ; or FeRh.

11. The apparatus of claim 9 , wherein the magnetoelectric region comprises a material including one of: BiFeO 3 or Cr 2 O 3 .

12. The apparatus of claim 9 , wherein the first or second PZe region comprises a material including one of: Pb(Zr 0.2 Ti 0.8 )O 3 ; PbTiO 3 ; BaTiO 3 ; BiFeO 3 ; Bi 4 Ti 3 O 12 ; Polyvinylidene fluoride; PZT; or PMNPT.

13. The apparatus of claim 9 comprises a first electrode adjacent to the magnetoelectric region.

14. The apparatus of claim 13 comprises a second electrode adjacent to the PZe region.

15. The apparatus of claim 14 comprises a voltage source coupled to the first and second electrodes.

16. The apparatus of claim 1 , wherein the FM region comprises a material including one of: Tb, Dy, Fe, Ga, Co, Pd, B, Ni, and/or Rh.

17. The apparatus of claim 1 , wherein the magnetoelectric region comprises a material including one of: Bi, Fe, and/or Cr.

18. The apparatus of claim 1 , wherein the first or second PZe region comprises a material including one of: Pb, Zr, Ti, Ba, Fe, F, C, H, Mg, and/or Nb.

19. The apparatus of claim 1 , wherein the first and second PZe regions have a width in a second direction substantially smaller than the length of the FM region in the first direction, wherein the first direction is orthogonal to the second direction.

20. The apparatus of claim 1 , wherein the magnetoelectric region is on top or on bottom of the FM region, the first PZe region and the second PZe region.

Assignees

• Intel Corp

Inventors

• Lin Chia-Ching
• Manipatruni Sasikanth
• Nikonov Dmitri E
• Young Ian A

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/85 Primary

  Materials of the active region · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title