Quantum dot integration schemes
US-2018190625-A1 · Jul 5, 2018 · US
US10998375B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10998375-B2 |
| Application number | US-201916512850-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 16, 2019 |
| Priority date | Nov 13, 2018 |
| Publication date | May 4, 2021 |
| Grant date | May 4, 2021 |
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Disclosed are light emitting modules and automobile illumination devices including the same. The light emitting module comprises a module substrate, a light emitting device on the module substrate, and a light guide structure apart from the module substrate and in plan view surrounding the light emitting device. The light emitting device comprises a first pixel and a second pixel each including a light emitting diode (LED) chip that emits light whose wavelength falls within a range of blue color or ultraviolet ray, and a wavelength conversion material on a top surface of at least one of the first and second pixels.
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What is claimed is: 1. A light emitting module, comprising: a module substrate; a light emitting device on the module substrate; and a light guide structure apart from the module substrate and surrounding the light emitting device in plan view, wherein the light emitting device comprises a first pixel and a second pixel each including a light emitting diode (LED) chip configured to emit light whose wavelength falls within a range of blue color or ultraviolet ray; and a wavelength conversion material on a top surface of at least one of the first and second pixels, and wherein an interval between the light emitting device and the light guide structure is in a range from about 0.1 mm to about 5 mm. 2. The light emitting module of claim 1 , wherein the light guide structure and the light emitting device have an air layer therebetween. 3. The light emitting module of claim 1 , wherein the light emitting device further comprises a pixel isolation pattern between and defining the first pixel and the second pixel, wherein the LED chip of the first pixel emits light whose wavelength is the same as a wavelength of light emitted from the LED chip of the second pixel. 4. The light emitting module of claim 3 , further comprising: a plurality of fluorescent layers correspondingly provided on the first and second pixels and each including the wavelength conversion material; and a plurality of partition wall structures on the pixel isolation pattern and surrounding the fluorescent layers in the plan view, wherein the partition wall structures include a silicon substrate. 5. The light emitting module of claim 1 , wherein the light emitting device has a pixel array region, wherein the pixel array region includes the first pixel, the second pixel, and a first partition between the first and second pixels, a diameter of the light guide structure being the same as or greater than a diameter of the pixel array region. 6. The light emitting module of claim 1 , wherein the light guide structure and the light emitting device have a resin layer therebetween. 7. The light emitting module of claim 1 , wherein the wavelength conversion material includes a quantum dot fluorescent material having a nano-sized particle. 8. The light emitting module of claim 1 , wherein the light guide structure has an elongated cylindrical waveguide. 9. A light emitting module, comprising: a module substrate; a light emitting device on the module substrate; and a light guide structure apart from the module substrate and guiding light emitted from the light emitting device, wherein the light emitting device comprises a first pixel and a second pixel each including a light emitting diode (LED) chip that emits light whose wavelength falls within a range of blue color or ultraviolet ray; and a wavelength conversion material on a top surface of at least one of the first and second pixels, and wherein an interval between the light emitting device and the light guide structure is in a range from about 0.1 mm to about 5 mm. 10. The light emitting module of claim 9 , wherein the light guide structure and the light emitting device have an air layer therebetween. 11. The light emitting module of claim 9 , wherein the light emitting device further comprises a pixel isolation pattern between and defining the first pixel and the second pixel, wherein a peak wavelength of light emitted from each LED chip of the first and second pixels has a range equal to or less than about 5% of an average peak wavelength of the light emitted from the LED chip of the first and second pixels. 12. The light emitting module of claim 11 , further comprising: a fluorescent layer on the LED chip and including the wavelength conversion material; and a partition surrounding the fluorescent layer, when viewed in plan, wherein the partition includes a silicon substrate. 13. The light emitting module of claim 9 , further comprising a plurality of bonding wires on an edge region of the light emitting device and coupled to the light emitting device and the module substrate. 14. An automobile illumination device, comprising: a module substrate; a light emitting device on the module substrate; and a light guide structure apart from the module substrate and guiding light emitted from the light emitting device, wherein the light emitting device comprises a first pixel and a second pixel each including a light emitting diode (LED) chip configured to emit light whose wavelength falls within a range of blue color or ultraviolet ray; and a wavelength conversion material on a top surface of at least one of the first and second pixels, and wherein an interval between the light emitting device and the light guide structure is in a range from about 0.1 mm to about 5 mm. 15. The automobile illumination device of claim 14 , wherein the light guide structure and the light emitting device have an air layer therebetween. 16. The automobile illumination device of claim 14 , wherein the light emitting device further comprises a pixel isolation pattern between and defining the first pixel and the second pixel, wherein a peak wavelength of light emitted from each LED chip of the first and second pixels has a range equal to or less than about 5% of an average peak wavelength of the light emitted from the LED chip of the first and second pixels. 17. The automobile illumination device of claim 14 , further comprising: a fluorescent layer on the LED chip and including the wavelength conversion material; and a partition surrounding the fluorescent layer, when viewed in plan, wherein the partition includes a silicon substrate.
Package configurations · CPC title
Optical field-shaping means, e.g. lenses · CPC title
Wavelength conversion means · CPC title
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title
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