High thermal conductive silicon nitride sintered body, and silicon nitride substrate and silicon nitride circuit board and semiconductor apparatus using the same
US-2018002237-A1 · Jan 4, 2018 · US
US10996241B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10996241-B2 |
| Application number | US-201716345965-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2017 |
| Priority date | Oct 31, 2016 |
| Publication date | May 4, 2021 |
| Grant date | May 4, 2021 |
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A probe card board in the present disclosure includes a plurality of through holes designed to receive a probe brought into contact with a measurement object. The probe card board is composed of silicon nitride based ceramics. The probe card board includes a first surface opposed to the measurement object and a second surface located opposite to the first surface. The probe card board contains a plurality of crystal phases of metal silicide. Metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten.
Opening claim text (preview).
The invention claimed is: 1. A probe card board, comprising: a plurality of through holes designed to receive a probe brought into contact with a measurement object, wherein the probe card board further comprises ceramics with a silicon nitride content, and a first surface opposed to the measurement object and a second surface located opposite to the first surface; and the probe card board contains a plurality of crystal phases of metal silicide, and a metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten, wherein a profile section height difference (Roc) between a loading length rate of 25% and a loading length rate of 75% in a roughness curve on the first surface is 0.4 μm to 0.8 μm. 2. The probe card board according to claim 1 , wherein a granular body composed of only metal constituting the metal silicide is not exposed onto the first surface. 3. The probe card board according to claim 1 , wherein the first surface contains melilite whose content is 5 mass % or less. 4. The probe card board according to claim 1 , wherein the first surface comprises void holes having a maximum length of 94 μm or less. 5. The probe card board according to claim 1 , wherein the silicon nitride based ceramics contains at least 50 mass % or more of silicon nitride relative to 100 mass % of all ingredients constituting ceramics. 6. The probe card board according to claim 1 , wherein kurtosis (Rku) of the first surface obtainable from a roughness curve is 2 to 16. 7. The probe card board according to claim 1 , wherein skewness (Rsk) of the first surface obtainable from a roughness curve is −0.9 to 0.8. 8. The probe card board according to claim 1 , wherein a crystal phase of the metal silicide is exposed onto a surface of the first surface. 9. A probe card, comprising: the probe card board according to claim 1 ; and the probe located at one of the plurality of through holes. 10. An inspection apparatus comprising the probe card according to claim 9 . 11. The probe card board according to claim 2 , wherein the first surface contains melilite whose content is 5 mass % or less. 12. The probe card board according to claim 11 , wherein the first surface comprises void holes having a maximum length of 94 μm or less. 13. The probe card board according to claim 12 , wherein the silicon nitride based ceramics contains at least 50 mass % or more of silicon nitride relative to 100 mass % of all ingredients constituting ceramics. 14. The probe card board according to claim 13 , wherein kurtosis (Rku) of the first surface obtainable from a roughness curve is 2 to 16 and skewness (Rsk) of the first surface obtainable from a roughness curve is −0.9 to 0.8. 15. The probe card board according to claim 2 , wherein the first surface comprises void holes having a maximum length of 94 μm or less. 16. The probe card board according to claim 15 , wherein the silicon nitride based ceramics contains at least 50 mass % or more of silicon nitride relative to 100 mass % of all ingredients constituting ceramics. 17. The probe card board according to claim 16 , wherein kurtosis (Rku) of the first surface obtainable from a roughness curve is 2 to 16 and skewness (Rsk) of the first surface obtainable from a roughness curve is −0.9 to 0.8. 18. The probe card board according to claim 2 , wherein the silicon nitride based ceramics contains at least 50 mass % or more of silicon nitride relative to 100 mass % of all ingredients constituting ceramics. 19. The probe card board according to claim 18 , wherein kurtosis (Rku) of the first surface obtainable from a roughness curve is 2 to 16 and skewness (Rsk) of the first surface obtainable from a roughness curve is −0.9 to 0.8.
Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite · CPC title
the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support (on an elastic support, e.g. a film, G01R1/0735) · CPC title
obtained by reaction sintering · CPC title
Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying · CPC title
using an intermediate card or back card with apertures through which the probes pass · CPC title
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