Method for forming a crack in the edge region of a donor substrate, using an inclined laser beam

Patent metadata

Field	Value
Publication number	US-10994442-B2
Application number	US-201615739969-A
Country	US
Kind code	B2
Filing date	Jun 23, 2016
Priority date	Jun 23, 2015
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

The invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), producing at least one modification (10) within the donor substrate (2) by means of at least one LASER beam (12), wherein the LASER beam (12) penetrates the donor substrate (2) via a planar surface (16) of the donor substrate (2), wherein the LASER beam (12) is inclined with respect to the planar surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate, wherein the LASER beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solid-body slice (1) detaches from the donor substrate (2) as a result of the modifications (10) produced or a stress-inducing layer (14) is produced or arranged on the planar surface (16) of the donor substrate (2) and mechanical stresses are produced in the donor substrate (2) by a thermal treatment of the stress-inducing layer (14), wherein the mechanical stresses produce a crack (20) for separating a solid-body layer (1), which crack propagates along the modifications (10).

First claim

The invention claimed is:

1. A method for separating solid-body layers from a donor substrate, said method comprising:
providing a donor substrate;
producing at least one modification within the donor substrate by means of at least one LASER beam, wherein the at least one LASER beam penetrates the donor substrate via a planar surface of the donor substrate, wherein the at least one LASER beam is inclined relative to the planar surface of the donor substrate in such a way that the at least one LASER beam penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate, wherein the at least one LASER beam is focused in order to produce the modification in the donor substrate, wherein a first portion of the at least one LASER beam penetrates the donor substrate at a first angle to the planar surface of the donor substrate and at least one further portion of the at least one LASER beam penetrates the donor substrate at a second angle to the planar surface of the donor substrate, wherein the value of the first angle differs from the value of the second angle, wherein the first portion of the at least one LASER beam and the at least one further portion of the at least one LASER beam are focused in order to produce the modification in the donor substrate;
producing an indentation starting from a peripheral surface in a direction of the centre of the donor substrate by means of an ablation laser or grinding tool;
producing a stress-inducing polymer layer on the planar surface of the donor substrate; and
producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer, wherein the mechanical stresses produce a crack for separating a solid-body layer, and wherein the crack propagates along the modifications,
wherein the at least one LASER beam penetrates the donor substrate via a peripheral surface of the donor substrate in a radial direction of the donor substrate.

2. The method according to claim 1 , wherein each one of the at least one LASER beam is oriented in the same orientation relative to the planar surface of the donor substrate for the production of modifications in the region of the centre of the donor substrate and for the production of modifications in the region of an edge of the donor substrate provided in a radial direction, at a distance of less than 10 mm from the edge.

3. The method according to claim 1 , wherein the first portion of the at least one LASER beam penetrates the donor substrate at the first angle to the planar surface of the donor substrate and the at least one further portion of the at least one LASER beam penetrates at the second angle for the production of modifications in the region of the centre of the donor substrate and for the production of modifications in the region of an edge of the donor substrate provided in a radial direction, wherein the value of the first angle always differs from the value of the second angle.

4. The method according to claim 1 , wherein:
the at least one LASER beam is emitted from a LASER device,
the LASER device is a picosecond LASER or a femtosecond LASER, and/or
the energy of the femtosecond LASER is selected such that propagation of damage of each modification in the donor substrate is less than 3 times the Rayleigh length, and/or
the wavelength of the femtosecond LASER is selected such that the absorption of the donor substrate is less than 10 cm-1, and/or
the individual modifications are produced in each case as a result of a multi-photon excitation brought about by the femtosecond LASER.

5. The method according to claim 1 , wherein:
the modifications are elongated, and/or
the at least one LASER beam introduced at a position of the peripheral surface of the donor substrate is focused at different penetration depths in order to produce a plurality of modifications.

6. The method according to claim 1 , further comprising producing an aberration adjustment at the at least one LASER beam penetrating via the peripheral surface.

7. The method according to claim 1 , wherein the thermal treatment is performed such that the stress-inducing polymer layer experiences a glass transition, wherein the stress-inducing polymer layer is temperature controlled to a temperature below the glass transition temperature of the stress-inducing polymer layer.

8. The method according to claim 1 , wherein the stress-inducing polymer layer comprises polydimethylsiloxane.

Assignees

• Siltectra Gmbh

Inventors

• Swoboda Marko
• Beyer Christian
• Schilling Franz
• Richter Jan

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title