Dendrite-intercepting layer for alkali metal secondary battery
US-9755236-B2 · Sep 5, 2017 · US
US10991944B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10991944-B2 |
| Application number | US-202016900389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2020 |
| Priority date | Jan 14, 2019 |
| Publication date | Apr 27, 2021 |
| Grant date | Apr 27, 2021 |
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The present invention relates to a method for making a novel cathode employing a monoclinic sulfur phase that enables a single plateau lithium-sulfur reaction in, for example, a carbonate electrolyte system. The cathode is applicable to a variety of other types of anodes. The method produces a cathode suitable for use in an electrode of a cell or battery by depositing monoclinic phase sulfur via vapor deposition onto a substrate in a sealed vapor deposition apparatus.
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What is claimed is: 1. A method of depositing monoclinic sulfur on a substrate of a porous material, comprising steps of: depositing monoclinic phase sulfur that is stable at a temperature below 80° C. via vapor deposition onto the substrate of the porous material in a sealed vapor deposition apparatus at a temperature sufficient to vaporize sulfur and for a time sufficient to provide the monoclinic phase sulfur, and cooling the monoclinic phase sulfur deposited on the substrate of the porous material to a temperature of 0-50° C., wherein the substrate is positioned in the vapor deposition apparatus with a gab between a surface of a liquid sulfur reservoir and the substrate such that the substrate does not come into contact with liquid sulfur during the vapor deposition step. 2. The method of claim 1 , wherein the method provides a substrate with monoclinic sulfur deposited therein that is suitable for use as a cathode in an electrode of a cell or battery and a loading of the monoclinic phase sulfur on the substrate is at least 0.05 mg/cm 2 . 3. The method of claim 1 , wherein the depositing step is carried out in the sealed vapor deposition apparatus at a temperature of from 140° C. to 350° C. 4. The method of claim 1 , wherein the depositing step is carried out for a period of at least about 1 minute. 5. The method of claim 1 , wherein the cooling step is carried out by exposing the vapor deposition apparatus or the cathode to a temperature of less than 50° C. 6. The method of claim 5 , wherein the vapor deposition apparatus is cooled immediately upon completion of the depositing step. 7. The method of claim 1 , wherein the substrate of the porous material has a pore volume of 10-95% after deposition of the monoclinic phase sulfur on the substrate. 8. The method of claim 1 , wherein the substrate is conductive. 9. The method of claim 1 , wherein the substrate comprises carbon nanofibers. 10. The method of claim 9 , wherein the carbon nanofibers onto which the monoclinic phase sulfur is deposited are free-standing carbon nanofibers. 11. The method of claim 1 , wherein the monoclinic phase sulfur comprises a form of sulfur selected from the group consisting of monoclinic gamma phase sulfur; monoclinic sulfur that best matches monoclinic gamma phase sulfur using PDXL Version 2.8.4.0 Integrated Powder Diffraction Software; monoclinic gamma phase sulfur oriented in the k direction; and monoclinic sulfur that best matches monoclinic gamma phase sulfur oriented in the k direction using PDXL Version 2.8.4.0 Integrated Powder Diffraction Software. 12. The method of claim 1 , wherein the method provides a substrate with monoclinic sulfur deposited therein that is suitable for use as a cathode in an electrode of a cell or battery and a loading of the monoclinic phase sulfur on the substrate is at least 0.5 mg/cm 2 . 13. The method of claim 1 , wherein the depositing step is carried out in the sealed vapor deposition apparatus at a temperature of from 150° C. to 210° C. 14. The method of claim 1 , wherein the depositing step is carried out for a period of 10 to 30 hours. 15. The method of claim 1 , wherein the cooling step is carried out by exposing the vapor deposition apparatus or the cathode to a temperature of from about −20° C. to about 25° C. 16. The method of claim 1 , wherein the monoclinic phase sulfur comprises a form of sulfur selected from the group consisting of monoclinic gamma phase sulfur; monoclinic sulfur that best matches PDF Card No.: 00-013-0141 Quality:B for Rosickyite, monoclinic gamma phase sulfur, using PDXL Version 2 Integrated Powder Diffraction Software. 17. The method of claim 16 , wherein the substrate is non-conductive and the method provides a substrate with monoclinic sulfur deposited therein that is suitable for use as a cathode in an electrode of a cell or battery and a loading of the monoclinic phase sulfur on the substrate is at least 0.5 mg/cm 2 and the depositing step is carried out in the sealed vapor deposition apparatus at a temperature of from 150° C. to 210° C. for a period of 10 to 30 hours. 18. A method of depositing monoclinic sulfur on a substrate of a porous material, comprising steps of: depositing monoclinic phase sulfur that is stable at a temperature below 80° C. via vapor deposition onto the substrate of the porous material in a sealed vapor deposition apparatus at a temperature sufficient to vaporize sulfur and for a time sufficient to provide the monoclinic phase sulfur, and cooling the monoclinic phase sulfur deposited on the substrate of the porous material to a temperature of 0-50° C., wherein the substrate is non-conductive. 19. A method of depositing monoclinic sulfur on a substrate of a porous material, comprising steps of: depositing monoclinic phase sulfur that is stable at a temperature below 80° C. via vapor deposition onto the substrate of the porous material in a sealed vapor deposition apparatus at a temperature sufficient to vaporize sulfur and for a time sufficient to provide the monoclinic phase sulfur, and cooling the monoclinic phase sulfur deposited on the substrate of the porous material to a temperature of 0-50° C., wherein the method provides a substrate with monoclinic sulfur deposited therein that is suitable for use as a cathode in an electrode of a cell or battery and a loading of the monoclinic phase sulfur on the substrate is at least 0.5 mg/cm 2 and the depositing step is carried out in the sealed vapor deposition apparatus at a temperature of from 150° C. to 210° C. for a period of 10 to 30 hours. 20. The method of claim 19 , wherein the cooling step is carried out by exposing the vapor deposition apparatus or the cathode to a temperature of from about −20° C. to about 25° C. immediately upon completion of the depositing step.
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