Semiconducting devices containing quantum wells

Patent metadata

Field	Value
Publication number	US-10991847-B2
Application number	US-202016734994-A
Country	US
Kind code	B2
Filing date	Jan 6, 2020
Priority date	Jan 18, 2019
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

First claim

What is claimed is:

1. A device comprising, in order:
an emitter layer;
a quantum well; and
a base layer, wherein:
the emitter layer has a first bandgap,
the base layer has a second bandgap, and
the first bandgap is different than the second bandgap by an absolute difference between about 25 meV and about 100 meV.

2. The device of claim 1 , wherein the absolute difference is between about 25 meV and about 50 meV.

3. The device of claim 1 , wherein the emitter layer comprises silicon- doped GaAs.

4. The device of claim 1 , wherein the base layer comprises zinc-doped GaInP.

5. The device of claim 1 , wherein the second bandgap is between about 1.0 eV and about 2.2 eV.

6. The device of claim 5 , wherein the second bandgap is about 1.8 eV.

7. The device of claim 1 , wherein the emitter layer has a thickness between about 0.5 μm and about 0.2 μm.

8. The device of claim 1 , wherein the base layer has a thickness between about 0.05 μm and about 0.2 μm.

9. The device of claim 1 , wherein the device comprises at least one of a solar cell, a transistor, a light-emitting diode, a laser, or a sensor.

10. The device of claim 1 , wherein the first bandgap is between about 1.0 eV and about 1.5 eV.

11. The device of claim 10 , wherein the first bandgap is about 1.4 eV.

12. The device of claim 1 , wherein the quantum well comprises a well layer positioned between a first barrier layer and a second barrier layer.

13. The device of claim 12 , wherein the well layer comprises undoped GaInAs.

14. The device of claim 12 , wherein the first barrier layer and the second barrier layer.

Assignees

• Alliance Sustainable Energy

Inventors

• Steiner Myles Aaron
• France Ryan Matthew

Classifications

• H10D62/854

  further characterised by the dopants · CPC title

• H10H20/8242

  characterised by the dopants · CPC title

• H10F77/146

  Superlattices; Multiple quantum well structures · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title