Ceramic membrane for water treatment using oxidation-treated SiC and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10987635-B2
Application number	US-201715820952-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	Dec 20, 2016
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

Disclosed are a ceramic membrane for water treatment using oxidation-treated SiC and a method for manufacturing the same. An object of the present invention is to manufacture a ceramic membrane for water treatment, which can be sintered at a low temperature of 1,050° C. or less, in which a SiO2 oxide layer formed during an oxidation process induces volume expansion so as to prevent defects due to the contraction of a coating layer during general sintering. The ceramic membrane for water treatment using the oxidation treated SiC includes a porous ceramic support layer; and a SiC layer formed on the porous ceramic support layer and including SiC particles on which a SiO2 oxide layer formed on a surface thereof.

First claim

What is claimed is:

1. A ceramic membrane for water treatment, comprising:
a porous ceramic support layer; and
a SiC layer formed on the porous ceramic support layer,
wherein the SiC layer comprises SiC particles and a SiO 2 oxide layer formed on a surface of the SiC particles,
wherein the SiC particles have a SiC oxidation percentage in a range of 12% to 15%, and
wherein the SiO 2 oxide layer has a thickness in a range of 0.028 μm to 0.035 μm.

2. The ceramic membrane according to claim 1 , wherein the SiC particles have an average particle diameter of 1 μm or less.

3. The ceramic membrane according to claim 1 , wherein the SiC layer contains pores having an average diameter in a range of 0.05 μm to 0.5 μm.

4. The ceramic membrane according to claim 1 , wherein the SiC layer is in a form of a film having a thickness in a range of 10 μm to 25 μm.

5. A method of manufacturing a ceramic membrane for water treatment, comprising:
(a) coating a porous ceramic support layer with a slurry comprising SiC powder; and
(b) sintering the coated result at a temperature of 950° C. to 1,050° C.,
wherein a SiO 2 oxide layer is formed on a surface of SiC particles by the sintering,
wherein the SiC particles have a SiC oxidation percentage in a range of 12% to 15%,
wherein the SiO 2 oxide layer has a thickness in a range of 0.028 μm to 0.035 μm; and
wherein the sintering is carried out for 2.5 hours to 3.5 hours.

6. The method according to claim 5 , wherein the SiC particles have an average particle diameter of 1 μm or less.

7. The method according to claim 5 , wherein, in step (b), a SiC layer contains pores having an average pore size in a range of 0.05 μm to 0.5 μm.

8. The method according to claim 5 , wherein, in step (b), a SiC layer has a thickness in a range of 10 μm to 25 μm.

Assignees

• Korea Inst Mach & Materials
• Korea Institute Materials Science

Inventors

• Song In-Hyuck
• Lee Jong-Man
• Ha Jang-Hoon
• Bukhari Syed Zaighum Abbas

Classifications

• B01D67/00411 Primary

  by sintering · CPC title

• B01D69/1214

  Chemically bonded layers, e.g. cross-linking · CPC title

• B01D69/1216

  Three or more layers · CPC title

• B01D69/1212

  Coextruded layers · CPC title

• B01D69/1218

  Layers having the same chemical composition, but different properties, e.g. pore size, molecular weight or porosity · CPC title