Semiconductor laser diode

Patent metadata

Field	Value
Publication number	US-10985529-B2
Application number	US-201716318084-A
Country	US
Kind code	B2
Filing date	Jul 12, 2017
Priority date	Jul 15, 2016
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

First claim

The invention claimed is:

1. A semiconductor laser diode comprising a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation,
wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction in the main extension plane,
the semiconductor layer sequence comprises a trench structure comprising at least three laterally adjacent trenches on one side laterally next to the active region and a middle one of the at least three trenches has different distances from the two adjacent ones of the at least three trenches, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and
the trench structure varies in at least one of a lateral, vertical or longitudinal direction with respect to properties of the trenches.

2. The semiconductor laser diode according to claim 1 , wherein a refractive index jump is produced on the surfaces that delimit the trenches in the lateral direction by which an expansion and a course of a light mode resulting in the active region are set.

3. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench having one or more of variations:
a varying width,
a varying depth,
a varying direction, and
a varying cross section.

4. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least two trenches on a side laterally next to the active region, the at least two trenches having one or more of variations:
a varying distance from each other,
lengths different from each other,
depths different from each other,
widths different from each other;
longitudinal positions different from each other,
vertical positions different from each other,
fillings different from each other,
coatings different from each other, and
cross sections different from each other.

5. The semiconductor laser diode according to claim 4 , wherein the at least two trenches have a distance of 10 nm to 5000 nm.

6. The semiconductor laser diode according to claim 5 , wherein the at least two trenches have a distance from each other substantially corresponding to half a wavelength of the light generated in the semiconductor layer sequence.

7. The semiconductor laser diode according to claim 1 , wherein the trench structure has a number of trenches of less than or equal to 10 on a side laterally next to the active region.

8. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench containing a gas.

9. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench is at least partially filled with a solid material.

10. The semiconductor laser diode according to claim 9 , wherein the solid material comprises at least one or more layers.

11. The semiconductor laser diode according to claim 9 , wherein the solid material comprises a porous material.

12. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench covered with a covering material so that the trench and the covering material form a cavity.

13. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence comprises a ridge waveguide structure and the trench structure comprises at least one trench arranged in the ridge waveguide structure.

14. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench having a width of less than or equal to 1000 nm.

15. The semiconductor laser diode according to claim 14 , wherein the at least one trench has a width corresponding substantially to half a wavelength of the light generated in the semiconductor layer sequence.

16. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench having a depth, measured from the top side of the semiconductor layer sequence, of 50 nm to 7000 nm.

17. The semiconductor laser diode according to claim 1 , wherein the trench structure has on both sides laterally next to the active region the at least three laterally adjacent trenches, and is symmetrical to a plane of symmetry extending through the active region in vertical and longitudinal directions.

18. The semiconductor laser diode according to claim 1 , wherein the trench structure comprises at least one trench and at least one further trench between which the active region is arranged in the lateral direction, and the at least one trench and the at least one further trench each have a varying direction and are translationally symmetrical with respect to a lateral direction.

19. A semiconductor laser diode comprising a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation,
wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction in the main extension plane,
the semiconductor layer sequence comprises a trench structure having at least two trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence,
the trench structure varies in at least one of a lateral, vertical or longitudinal direction with respect to properties of the at least two trenches, and
the at least two trenches are arranged on a common side laterally next to at least one of the active region or at least one trench that is at least partially filled with a solid material comprising a porous material.

20. A semiconductor laser diode comprising a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation,
wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction in the main extension plane,
the semiconductor layer sequence comprises a trench structure having at least two trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence and through the active layer,
the trench structure varies in at least one of a lateral, vertical or longitudinal direction with respect to properties of the at least two trenches, and
the trench structure comprises the at least two trenches on a side laterally next to at least one of the active region or at least one trench that is at least partially filled with a solid material comprising a porous material.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Gerhard Sven
• Eichler Christoph
• Lell Alfred
• Stojetz Bernhard

Classifications

• H01S5/204

  Strongly index guided structures · CPC title

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S5/1014 Primary

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• H01S2301/166

  Single transverse or lateral mode · CPC title

• H01S5/1017 Primary

  Waveguide having a void for insertion of materials to change optical properties · CPC title