Organic transistor and manufacturing method thereof, array substrate, display device

Patent metadata

Field	Value
Publication number	US-10985320-B2
Application number	US-201816484150-A
Country	US
Kind code	B2
Filing date	Dec 26, 2018
Priority date	Jan 5, 2018
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

First claim

What is claimed is:

1. A method for manufacturing an organic transistor, comprising:
applying a photoresist on a side of an organic insulating layer;
patterning the photoresist to form a confinement well;
adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well;
volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well to form an organic single crystal layer;
removing remaining photoresist; and
using the organic single crystal layer as an active layer of the organic transistor,
wherein before applying the photoresist on the side of the organic insulating layer, the method further comprises, forming an organic polymer layer on a surface of the organic insulating layer, and
wherein forming the organic polymer layer on the surface of the organic insulating layer comprises: performing a hydrophilic treatment and a hydrophobic treatment to a surface of the organic polymer layer in sequence.

2. The method according to claim 1 , wherein after patterning the photoresist to form the confinement well and before adding the solution of the organic semiconductor material and the orthogonal solvent to the confinement well, the method further comprises:
performing a hydrophilic treatment to a surface of the organic polymer layer not covered by the photoresist; the solution of the organic semiconductor material being hydrophilic.

3. The method according to claim 1 , wherein forming the organic polymer layer on the surface of the organic insulating layer comprises:
preparing the organic polymer layer on the surface of the organic insulating layer using a polysiloxane-based organic polymer.

4. The method according to claim 1 , wherein the organic insulating layer is prepared using one or more of polyacrylonitrile, polypropylene oxide, and polymethyl methacrylate.

5. The method according to claim 2 , wherein the organic insulating layer is prepared using one or more of polyacrylonitrile, polypropylene oxide, and polymethyl methacrylate.

6. The method according to claim 3 , wherein the organic insulating layer is prepared using one or more of polyacrylonitrile, polypropylene oxide, and polymethyl methacrylate.

7. A method for manufacturing an organic transistor, comprising:
applying a photoresist on a side of an organic insulating layer;
patterning the photoresist to form a confinement well;
adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well;
volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well to form an organic single crystal layer;
removing remaining photoresist; and
using the organic single crystal layer as an active layer of the organic transistor,
wherein before applying the photoresist on the side of the organic insulating layer, the method further comprises: forming an organic polymer layer on a surface of the organic insulating layer, and
wherein after patterning the photoresist to form the confinement well and before adding the solution of the organic semiconductor material and the orthogonal solvent to the confinement well, the method further comprises: performing a hydrophilic treatment and a hydrophobic treatment to a surface of the organic polymer layer not covered by the photoresist in sequence; the solution of the organic semiconductor material being hydrophobic.

8. The method according to claim 7 , wherein after patterning the photoresist to form the confinement well and before adding the solution of the organic semiconductor material and the orthogonal solvent to the confinement well, the method further comprises:
performing a hydrophilic treatment to a surface of the organic polymer layer not covered by the photoresist; the solution of the organic semiconductor material being hydrophilic.

9. The method according to claim 7 , wherein forming the organic polymer layer on the surface of the organic insulating layer comprises:
preparing the organic polymer layer on the surface of the organic insulating layer using a polysiloxane-based organic polymer.

10. The method according to claim 7 , wherein the organic insulating layer is prepared using one or more of polyacrylonitrile, polypropylene oxide, and polymethyl methacrylate.

Assignees

• Hefei Boe Display Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Zhang Ji
• Hu Weiwei
• Chen Liang
• Gao Jincheng
• Hui Guanbao

Classifications

• G03F7/0007 Primary

  Filters, e.g. additive colour filters; Components for display devices · CPC title

• G03F7/16

  Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title