Semiconductor device having stacked chips

Patent metadata

Field	Value
Publication number	US-10985141-B2
Application number	US-201916726752-A
Country	US
Kind code	B2
Filing date	Dec 24, 2019
Priority date	Sep 6, 2012
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

A semiconductor device includes first, second and third stacked chips with a first, second and third substrate, respectively, at least three first, second and third logical circuits, respectively, and at least two first, second and third vias, respectively, and a fourth chip stacked on the third chip having a fourth substrate, and at least three fourth logical circuits. First and second ones of the first to third logical circuits of the first to fourth chips are each configured to perform a first and second logical operation, respectively, on a first and second address input signal, respectively, received at the respective chip to thereby output a first and second address output signal, respectively. Third ones are each configured to activate the respective chip based on at least the second address output signal transmitted within the respective chip.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first chip having:
a first substrate,
at least three first logical circuits formed on the first substrate, and
at least two first vias extending through the first substrate in a first direction;

a second chip stacked on the first chip at a first side of the first chip in the first direction, the second chip having:
a second substrate,
at least three second logical circuits formed on the second substrate, and
at least two second vias extending through the second substrate in the first direction;

a third chip stacked on the second chip at a first side of the second chip in the first direction, the third chip having:
a third substrate,
at least three third logical circuits formed on the third substrate, and
at least two third vias extending through the third substrate in the first direction;

a fourth chip stacked on the third chip at a first side of the third chip in the first direction, the fourth chip having:
a fourth substrate, and
at least three fourth logical circuits formed on the fourth substrate;

a fifth chip stacked on the first chip at a second side of the first chip in the first direction, the second side of the first chip being opposite the first side of the first chip in the first direction; and
a sixth chip stacked on the first chip at the second side of the first chip in the first direction,
wherein:
first ones of the first to third logical circuits of the first to third chips are each configured to perform a first logical operation on a first address input signal received at the respective chip to thereby output a first address output signal,
second ones of the first to third logical circuits of the first to third chips are each configured to perform a second logical operation on a second address input signal received at the respective chip and the first address output signal transmitted within the respective chip to thereby output a second address output signal, and
third ones of the first to third logical circuits of the first to third chips are each configured to activate the respective chip based on at least the second address output signal transmitted within the respective chip.

2. The semiconductor device according to claim 1 , wherein at least one of the fifth chip and the sixth chip functions as an interface chip.

3. The semiconductor device according to claim 2 , wherein among the first to fourth chips, the first chip is nearest to the fifth chip and the sixth chip, and the fourth chip is farthest from the fifth chip and the sixth chip.

4. The semiconductor device according to claim 3 , wherein the at least one of the fifth chip and the sixth chip functioning as the interface chip includes:
a first interface chip electrically connected to a part of the first vias of the first chip, and
a second interface chip electrically connected to another part of the first vias of the first chip.

5. The semiconductor device according to claim 1 , wherein:
each of the first to fourth chips comprises:
a memory cell array, and
a peripheral circuit,

one of the fifth chip and the sixth chip functions as an interface chip; and
the other one of the fifth chip and the sixth chip functions as a power supply chip and includes a pump circuit.

6. The semiconductor device according to claim 1 , wherein:
the first chip further has at least two first wiring layers,
the second chip further has at least two second wiring layers,
the third chip further has at least two third wiring layers,
the fourth chip further has at least two fourth wiring layers, and
the first to third vias of the first to third chips at least partially overlap with the second to fourth wiring layers of the second to fourth chips in the first direction of the first to fourth chips, respectively.

7. The semiconductor device according to claim 6 , wherein:
input nodes of the first ones of the first to third logical circuits of the first to third chips are electrically connected to first ones of the first to third wiring layers of the first to third chips, respectively, and output nodes of the first ones of the first to third logical circuits of the first to third chips are electrically connected to first ones of the second to fourth vias of the second to fourth chips, respectively, and
input nodes of the second ones of the first to third logical circuits of the first to third chips are electrically connected to second ones of the first to third wiring layers of the first to third chips, respectively, and output nodes of the second ones of the first to third logical circuits of the first to third chips are electrically connected to second ones of the second to fourth vias of the second to fourth chips, respectively.

8. The semiconductor device according to claim 6 , wherein the first address output signals and the second address output signals output from the first to third chips are transmitted to the second to fourth chips through first parts of the first to third vias, respectively.

9. The semiconductor device according to claim 8 , wherein the fourth chip further has at least two fourth vias extending through the fourth substrate in the first direction.

10. The semiconductor device according to claim 8 , wherein the fourth chip does not have a via extending through the fourth substrate in the first direction.

11. The semiconductor device according to claim 8 , wherein each of the third ones of the first to third logical circuits of the first to third chips activates its respective chip based on the second address output signal transmitted in the respective chip, a first chip enable signal, and a second chip enable signal received at the respective chip.

12. The semiconductor device according to claim 11 , wherein the first chip enable signal and the second chip enable signal received at the first to third chips are transmitted to the second to fourth chips through second parts of the first to third vias, respectively.

13. The semiconductor device according to claim 1 , wherein:
the first logical operation is an inversion operation, and
the second logical operation is an exclusive disjunction operation.

Assignees

• Toshiba Memory Corp

Inventors

• Koyanagi Masaru

Classifications

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/879

  Bump connectors and bond wires · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/859

  Bump connectors and bond wires · CPC title